China Manufacturer SiC Coated Graphite MOCVD Epitaxy Susceptor

Short Description:

Purity < 5ppm
‣ Good doping uniformity
‣ High density and adhesion
‣ Good anti-corrosive and carbon resistence

‣ Professional customization
‣ Short lead time
‣ Stable supply
‣ Quality control and continual improvement

Epitaxy of GaN on Sapphire (RGB/Mini/Micro LED);
Epitaxy of GaN on Si Substrate(UVC);
Epitaxy of GaN on Si Substrate(Electronical Device);
Epitaxy of Si on Si Substrate(Integrated circuit);
Epitaxy of SiC on SiC Substrate (Substrate);
Epitaxy of InP on InP

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High quality MOCVD Susceptor buying online in China

A wafer needs to pass through several steps before it is ready for use in electronic devices. One important process is silicon epitaxy, in which the wafers are carried on graphite susceptors. The properties and quality of the susceptors have a crucial effect on the quality of the wafer’s epitaxial layer.

For thin film deposition phases such as epitaxy or MOCVD, VET supplies ultra-pure graphiteequipment used to support substrates or "wafers". At the core of the process, this equipment, epitaxy susceptors or satellite platforms for the MOCVD, are first subjected to the deposition environment:

● High temperature.
● High vacuum.
● Use of aggressive gaseous precursors.
● Zero contamination, absence of peeling.
● Resistance to strong acids during cleaning operations

VET Energy is the real manufacturer of customized graphite and silicon carbide products with coating for semiconductor and photovoltaic industry. Our technical team comes from top domestic research institutions, can provide more professional material solutions for you.

We continuously develop advanced processes to provide more advanced materials, and have worked out an exclusive patented technology, which can make the bonding between the coating and the substrate tighter and less prone to detachment.

Features of our products:

1. High temperature oxidation resistance up to 1700℃.
2. High purity and thermal uniformity
3. Excellent corrosion resistance: acid, alkali, salt and organic reagents.
4. High hardness, compact surface, fine particles.
5. Longer service life and more durable

CVD SiC Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) orientation
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg^-1·K^-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m^-1·K^-1
Thermal Expansion(CTE)	4.5×10^-6K^-1