CVDHo roala ha SiCe hlophisa bocha meeli ea lits'ebetso tsa tlhahiso ea semiconductor ka sekhahla se makatsang. Theknoloji ena ea ho roala e bonahalang e le bonolo e fetohile tharollo ea bohlokoa liqholotsong tse tharo tsa mantlha tsa tšilafalo ea likaroloana, khoholeho ea mocheso o phahameng le khoholeho ea plasma tlhahisong ea li-chip. Baetsi ba lisebelisoa tsa semiconductor ba holimo lefatšeng ba e thathamisitse e le theknoloji e tloaelehileng bakeng sa lisebelisoa tsa moloko o latelang. Joale, ke eng e etsang hore seaparo see e be "lihlomo tse sa bonahaleng" tsa ho etsa li-chip? Sengoliloeng sena se tla sekaseka ka botebo melao-motheo ea eona ea tekheniki, ts'ebeliso ea mantlha le katleho e tsoetseng pele.
Ⅰ. Tlhaloso ea ho roala CVD SiC
Ho roala ha CVD SiC ho bolela lera le sireletsang la silicon carbide (SiC) le behiloeng holim'a substrate ka ts'ebetso ea lik'hemik'hale tsa mouoane (CVD). Silicon carbide ke motsoako oa silicon le k'habone, e tsejoang ka ho thatafala ha eona, conductivity e phahameng ea mocheso, ho se sebetse ha lik'hemik'hale le ho hanyetsa mocheso o phahameng. Theknoloji ea CVD e ka theha sekhahla sa SiC se nang le bohloeki bo holimo, se teteaneng le se lekanang, 'me se ka lumellana haholo le li-geometri tse rarahaneng. Sena se etsa hore liphahlo tsa CVD SiC li tšoanelehe haholo bakeng sa lits'ebetso tse batlang li ke ke tsa finyelloa ke lisebelisoa tsa setso tse ngata kapa mekhoa e meng ea ho roala.
Ⅱ. Molao-motheo oa ts'ebetso ea CVD
Chemical vapor deposition (CVD) ke mokhoa oa ho etsa lintho tse ngata o sebelisoang ho hlahisa lisebelisoa tsa boleng bo holimo, tse sebetsang hantle. Molao-motheo oa mantlha oa CVD o kenyelletsa karabelo ea li-precursors tsa gaseous holim'a substrate e futhumetseng ho etsa lesela le tiileng.
Mona ke karohano e nolofalitsoeng ea ts'ebetso ea SiC CVD:
Setšoantšo sa molao-motheo oa CVD
1. Kenyelletso ea pele: Li-precursors tsa gaseous, hangata likhase tse nang le silicon (mohlala, methyltrichlorosilane - MTS, kapa silane - SiH₄) le likhase tse nang le carbon (mohlala, propane - C₃H₈), li kenngoa ka kamoreng ea ho arabela.
2. Phano ea khase: Likhase tsena tse etellang pele li phalla holim'a substrate e futhumetseng.
3. Khatiso: Limolek'hule tse etellang pele li khahlisa ka holim'a karolo e chesang e chesang.
4. Boitšoaro ba bokaholimo: Ka mocheso o phahameng, limolek'hule tse adsorbed li na le lik'hemik'hale tsa lik'hemik'hale, tse hlahisang ho senyeha ha selelekela le ho thehoa ha filimi e tiileng ea SiC. Lihlahisoa li lokolloa ka mokhoa oa likhase.
5. Ho felloa ke matla le ho felloa ke matla: Li-gaseous byproducts li senya holimo ebe lia tsoa ka phaposing. Taolo e nepahetseng ea mocheso, khatello, sekhahla sa phallo ea khase le mahloriso a pele ho bohlokoa ho fihlela thepa ea filimi e lakatsehang, ho kenyelletsa botenya, bohloeki, kristale le ho khomarela.
Ⅲ. Tšebeliso ea Liaparo tsa CVD SiC ho Mekhoa ea Semiconductor
Liaparo tsa CVD SiC li bohlokoa haholo tlhahisong ea semiconductor hobane motsoako oa bona o ikhethang oa thepa o kopana ka kotloloho le maemo a feteletseng le litlhoko tse thata tsa bohloeki ba tikoloho ea tlhahiso. Li matlafatsa khanyetso ea kutu ea plasma, tlhaselo ea lik'hemik'hale, le tlhahiso ea likaroloana, tseo kaofela li leng bohlokoa ho holisa chai e ngata le nako ea lisebelisoa.
Tse latelang ke tse ling tse tloaelehileng tsa likarolo tse koahetsoeng tsa CVD SiC le maemo a tsona a ts'ebeliso:
1. Plasma Etching Chamber le Focus Ring
Lihlahisoa: CVD SiC coated liners, showerheads, susceptors, le mehele ea ho tsepamisa maikutlo.
Kopo: Ho etching ea plasma, plasma e sebetsang haholo e sebelisoa ho khetha ho tlosa lisebelisoa ho li-wafers. Lisebelisoa tse sa koaheloang kapa tse sa tšoarelleng nako e telele li senyeha ka potlako, e leng se bakang tšilafalo ea likaroloana le ho theoha khafetsa. Liaparo tsa CVD SiC li na le khanyetso e babatsehang ea lik'hemik'hale tse mabifi tsa plasma (mohlala, fluorine, chlorine, bromine plasmas), li lelefatsa bophelo ba likarolo tsa bohlokoa tsa kamore, 'me li fokotsa tlhahiso ea likaroloana, tse eketsang ka ho toba lihlahisoa tsa liphaphatha.
Likamore tsa 2.PECVD le HDPCVD
Lihlahisoa: CVD SiC coated karabelo likamore le li-electrode.
Lisebelisoa: Plasma e ntlafalitsoeng ea mouoane oa lik'hemik'hale (PECVD) le plasma e phahameng ea CVD (HDPCVD) li sebelisetsoa ho kenya lifilimi tse tšesaane (mohlala, likarolo tsa dielectric, likarolo tsa passivation). Mekhoa ena e boetse e kenyelletsa tikoloho e thata ea plasma. Liaparo tsa CVD SiC li sireletsa marako a kamore le li-electrode ho khoholeho ea mobu, ho netefatsa boleng bo tsitsitseng ba filimi le ho fokotsa liphoso.
3. Thepa ea ho kenya ion
Lihlahisoa: CVD SiC coated beamline likarolo (mohlala, apertures, Faraday cups).
Lisebelisoa: Ho kenngoa ha ion ho hlahisa li-ion tsa dopant ka har'a li-semiconductor substrates. Mahlaseli a ion a matla a phahameng a ka baka ho phatloha le khoholeho ea likarolo tse pepeneneng. Ho thatafala le bohloeki bo phahameng ba CVD SiC ho fokotsa tlhahiso ea likaroloana ho tloha likarolong tsa beamline, ho thibela tšilafalo ea li-wafers nakong ea mohato ona oa bohlokoa oa doping.
4. Likarolo tsa epitaxial reactor
Lihlahisoa: Li-susceptors tse koahetsoeng tsa CVD SiC le baabi ba khase.
Lisebelisoa: Khōlo ea Epitaxial (EPI) e kenyelletsa ho hōlisa likarolo tsa kristale tse laetsoeng haholo holim'a substrate ka mocheso o phahameng. Li-susceptors tse koahetsoeng tsa CVD SiC li fana ka botsitso bo botle ba mocheso le ho se sebetse ha lik'hemik'hale ka mocheso o phahameng, ho netefatsa hore ho futhumala ho tšoanang le ho thibela tšilafalo ea susceptor ka boeona, e leng habohlokoa ho finyella likarolo tsa boleng bo phahameng ba epitaxial.
Ha li-geometri tsa chip li honyela le litlhoko tsa ts'ebetso li ntse li eketseha, tlhoko ea barekisi ba boleng bo holimo ba CVD SiC le bahlahisi ba li-coating tsa CVD e ntse e hola.
IV. Liphephetso tsa ts'ebetso ea ho roala CVD SiC ke life?
Leha ho na le melemo e meholo ea ho roala CVD SiC, tlhahiso ea eona le ts'ebeliso ea eona e ntse e tobana le mathata a ts'ebetso. Ho rarolla mathata ana ke senotlolo sa ho fihlela ts'ebetso e tsitsitseng le ho boloka litšenyehelo.
Mathata:
1. Ho khomarela ho substrate
SiC e ka ba phephetso ho fihlela sekhomaretsi se matla le se ts'oanang ho lisebelisoa tse fapaneng tsa substrate (mohlala, graphite, silicon, ceramic) ka lebaka la phapang ea li-coefficients tsa katoloso ea mocheso le matla a holim'a metsi. Ho khomarela ho fokolang ho ka lebisa ho delamination nakong ea libaesekele tse futhumetseng kapa khatello ea mochine.
Litharollo:
Ho lokisa bokaholimo: Ho hloekisa ka hloko le ho phekola holim'a metsi (mohlala, etching, plasma treatment) ea substrate ho tlosa litšila le ho theha sebaka se nepahetseng bakeng sa ho kopanya.
Interlayer: Beha lesela le tšesaane le le ikhethileng kapa lesela la "buffer" (mohlala, pyrolytic carbon, TaC - e ts'oanang le CVD TaC coating lits'ebetsong tse ikhethileng) ho fokotsa ho se tsamaisane ha mocheso le ho khothaletsa ho khomarela.
Ntlafatsa liparamente tsa deposition: Laola ka hloko mocheso oa deposition, khatello, le karo-karolelano ea khase ho ntlafatsa nucleation le kholo ea lifilimi tsa SiC le ho khothaletsa maqhama a matla a sefahleho.
2. Khatello ea Lifilimi le ho Petsoha
Nakong ea deposition kapa pholileng e latelang, likhatello tse setseng li ka hlaha ka har'a lifilimi tsa SiC, tsa baka ho phatloha kapa ho soahlamana, haholo-holo ho li-geometri tse kholo kapa tse rarahaneng.
Litharollo:
Taolo ea Mocheso: Laola maemo a ho futhumatsa le a ho pholisa ka nepo ho fokotsa khatello ea maikutlo le khatello ea maikutlo.
Ho roala ha Gradient: Sebelisa mekhoa ea ho roala li-multilayer kapa gradient ho fetola butle-butle sebopeho sa thepa kapa sebopeho ho amohela khatello ea maikutlo.
Kamor'a Deposition Annealing: Anneal likarolo tse koahetsoeng ho felisa khatello ea kelello e setseng le ho ntlafatsa botšepehi ba lifilimi.
3. Tumellano le ho Tšoanang ho Lijeometri tse Ratang
Ho beha liphahlo tse teteaneng le tse lumellanang ka mokhoa o ts'oanang likarolong tse nang le libopeho tse rarahaneng, likarolo tse phahameng, kapa likanale tse ka hare ho ka ba thata ka lebaka la mefokolo ea phallo ea pele le kinetics ea karabelo.
Litharollo:
Ntlafatso ea Moralo oa Reactor: Moralo oa li-reactor tsa CVD tse nang le matla a phallo ea khase le ho ts'oana ha mocheso ho netefatsa kabo e tšoanang ea li-precursors.
Phetoho ea Parameter ea Ts'ebetso: Hlophisa hantle khatello ea mali, sekhahla sa phallo, le mahloriso a tlang pele ho ntlafatsa phallo ea khase hore e be likarolo tse rarahaneng.
Multi-stage deposition: Sebelisa mehato e tsoelang pele ea ho beha kapa lisebelisoa tse potolohang ho netefatsa hore bokaholimo bohle bo koahetsoe ka ho lekaneng.
V. FAQ
Q1: Ke phapang efe ea mantlha lipakeng tsa CVD SiC le PVD SiC lits'ebetsong tsa semiconductor?
A: Liaparo tsa CVD ke mehaho ea kristale ea columnar e nang le bohloeki ba> 99.99%, e loketseng maemo a plasma; Liaparo tsa PVD hangata li na le amorphous / nanocrystalline tse nang le bohloeki ba <99.9%, haholo-holo tse sebelisetsoang ho khabisa.
Q2: Ke mocheso ofe o phahameng oo seaparo se ka se mamellang?
A: Mamello ea nako e khutšoanyane ea 1650 ° C (e kang mokhoa oa annealing), moeli oa tšebeliso ea nako e telele oa 1450 ° C, ho feta mocheso ona o tla baka phetoho ea mohato ho tloha β-SiC ho ea α-SiC.
Q3: Mofuta o tloaelehileng oa botenya ba ho roala?
A: Likarolo tsa semiconductor boholo ba 80-150μm, 'me enjene ea lifofane EBC barbotage ka fihla 300-500μm.
Q4: Ke lintlha life tsa bohlokoa tse amang litšenyehelo?
A: Bohloeki ba pele (40%), tšebeliso ea matla ea lisebelisoa (30%), tahlehelo ea lihlahisoa (20%). Theko ea lisebelisoa tsa liphahlo tse phahameng li ka fihla ho $ 5,000 / kg.
Q5: Barekisi ba ka sehloohong ba lefats'e ke eng?
A: Europe le United States: CoorsTek, Mersen, Ionbond; Asia: Semixlab, Veteksemicon, Kallex (Taiwan), Scientech (Taiwan)
Nako ea poso: Phup-09-2025