Likarolo tsa Epitaxial

Likarolo tse koahetsoeng ka CVD SiC bakeng sa Silicon Epitaxy (Si Epi)

E entsoe ka nepo bakeng sa litsamaiso tsa ho boloka Silicon Epitaxial tse nang le wafer e le 'ngoe le sehlopha, li-susceptor tsa rona tse koahetsoeng ka CVD SiC, li-disk tsa sathelaete, le likarolo tsa tšimo ea mocheso li fana ka ho tšoana ho ikhethang ha mocheso le ho se ntše khase. Lera la sekoahelo sa cubic β-SiC le nang le density e phahameng le akaretsa ka botlalo substrate ea graphite e hloekileng haholo, le thibela ho qoelisoa ha khase e arabelang (SiH₄, SiH₂Cl₂, HCl) le ho netefatsa maemo a litšila a tšepe a tlase haholo (< 5 ppm) nakong ea ts'ebetso ea Si Epi ea mocheso o phahameng (1000°C - 1200°C).

Tšimo e Tšoanang ea Thermal Field

Ho ntša metsi ho laoloang ho netefatsa botsitso bo nepahetseng ba filimi ea wafer ho tloha moeling ho ea bohareng.

Khanyetso ea HCl Etch

E fana ka tšireletso e matla khahlanong le lik'hemik'hale tsa ho hloekisa ka kamoreng le ho phatloha ha mocheso.

Ho lumellana ha Sistimi ea OEM

CNC e entsoeng ka nepo ho lekana lisebelisoa tsa Epi tsa 200mm/300mm tse tloaelehileng tsa wafer e le 'ngoe (Lisebelisoa tse Sebelisitsoeng, ASM).

Paramethara ea Tekheniki Boleng ba Tlhaloso Mokhoa o Tloaelehileng / oa Teko
Lisebelisoa tsa ho roala CVD β-SiC (Mokhahlelo oa Cubic) Sebopeho sa kristale e nang le boima bo phahameng
Lisebelisoa tsa Substrate Graphite e Hloekileng ka ho Fetisisa ea Isostatic Botenya: 1.82 - 1.88 g/cm³
Bohloeki ba Lik'hemik'hale Litšila tsohle < 5 ppm GDMS e Lekoa
Botenya ba ho roala 80 μm - 150 μm Ho tšoana ≤ ± 5%
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