Likarolo tsa SiC Epitaxial

Liaparo tse Tsoetseng Pele tsa CVD bakeng sa Kholo ea SiC Epitaxial

E etselitsoe lits'ebetso tsa sesebelisoa sa semiconductor se matla a phahameng se sebetsang tlas'a khatello e matla ea mocheso (1500°C - 1700°C), li-susceptor tsa rona tsa polanete tse koahetsoeng ke CVD SiC le TaC, li-disk tsa satellite, le li-deflector tsa khase li hahiloe ho ipabola. E etselitsoe ho thibela tlhahiso ea likaroloana, ho senyeha ha bokaholimo, le ho qoelisoa ha khase e arabelang (H₂, SiH₄, C₃H∯), liphahlo tsa rona tse tsoetseng pele li netefatsa bophelo bo bolelele ba ts'ebetso, taolo e phahameng ea dopant, le ho tšoana ha botenya ba filimi ho pholletsa leLi-wafer tsa SiC epitaxial tsa lisenthimithara tse 6 le tse 8.

Ho Tsitsisa Mocheso o Phahameng ka ho Fetisisa

E tsitsitse mochesong ho fihlela ho 1700°C libakeng tse matla tsa ho fokotsa H₂/silane.

Ho bapisa Gradient CTE

E felisa ho arohana ha masela, ho petsoha ha masela a manyane le ho phatloha ha masela nakong ea potoloho e potlakileng ea mocheso.

Boitokisetso ba Sekala sa Wafer sa lisenthimithara tse 8

Mochini o nepahetseng oa CNC o etselitsoeng li-reactor tsa SiC Epi tse nang le throughput e phahameng ea moloko o latelang (LPE, Aixtron, Nuflare).

Paramethara ea Tekheniki	Boleng ba Tlhaloso	Mokhoa o Tloaelehileng / oa Teko
Likhetho tsa Thepa ea ho Koahela	CVD SiC / Tantalum Carbide (TaC)	Lera la Hermetic le Hloekileng Haholo
Sebaka sa motheo	Graphite e Isostatic e Hloekisitsoeng	Litšila tse ngata < 5 ppm
Khanyetso ea Thermal Shock	Sekhahla sa ho Ramp sa Delta T > 500°C	Ha ho petsohe/ho petsoha
Bokgoni ba Bokaholimo (Ra)	≤ 0.4 μm (Seipone se bentšitsoeng)	E Thibela ho Khomarela ha Wafer le Likaroloana