CVDSiC shafiyana sake fasalin iyakokin ayyukan masana'antu na semiconductor a ƙimar ban mamaki. Wannan fasaha mai sauƙi mai sauƙi ya zama mafita mai mahimmanci ga ƙalubalen ƙalubalen ƙalubale guda uku na gurɓataccen ƙwayar cuta, lalata yanayin zafi da yashwar plasma a masana'antar guntu. Manyan masana'antun kayan aikin semiconductor na duniya sun jera shi a matsayin daidaitaccen fasaha don kayan aiki na gaba. Don haka, menene ya sa wannan shafi ya zama "makamai marasa ganuwa" na masana'antar guntu? Wannan labarin zai zurfafa nazarin ka'idodinsa na fasaha, ainihin aikace-aikacen da kuma ci gaba mai mahimmanci.
Ⅰ. Ma'anar murfin CVD SiC
CVD SiC shafi yana nufin wani kariyar Layer na silicon carbide (SiC) da aka ajiye a kan wani abu ta hanyar sinadari mai tururi (CVD). Silicon carbide wani fili ne na silicon da carbon, wanda aka sani da kyakkyawan taurinsa, babban ƙarfin zafi, rashin kuzarin sinadarai da juriya mai zafi. Fasahar CVD na iya samar da wani babban tsafta, mai yawa da kauri na SiC Layer, kuma yana iya zama mai dacewa sosai ga hadadden geometries. Wannan ya sa suturar CVD SiC ta dace sosai don aikace-aikacen da ake buƙata waɗanda ba za a iya saduwa da su ta hanyar kayan gargajiya ko wasu hanyoyin sutura ba.
Ⅱ. CVD tsari tsari
Kemikal tururi (CVD) hanya ce ta masana'anta da aka yi amfani da ita don samar da ingantattun kayan aiki masu inganci. Babban ka'ida na CVD ya ƙunshi martanin abubuwan da ke haifar da iskar gas a saman wani abu mai zafi don samar da ingantaccen shafi.
Anan ga sauƙaƙewar tsarin SiC CVD:
Tsarin tsari na CVD
1. Gabatarwa na farko: Gaseous precursors, yawanci silicon-dauke da iskar gas (misali, methyltrichlorosilane - MTS, ko silane - SiH₄) da carbon-dauke da gas (misali, propane - C₃H₈), an gabatar a cikin dauki dakin.
2. isar gas: Waɗannan iskar iskar gas ɗin suna gudana akan ma'aunin zafi.
3. Adsorption: Precursor kwayoyin halitta adsorb zuwa saman da zafi substrate.
4. Tashin hankali: A yanayin zafi mai zafi, ƙwayoyin da aka yi amfani da su suna fuskantar halayen sinadarai, wanda ya haifar da bazuwar farkon da kuma samar da ingantaccen fim na SiC. Ana fitar da samfuran a cikin nau'in gas.
5. Desorption da shaye: Gaseous byproducts desorb daga saman sa'an nan shaye daga cikin dakin. Daidaitaccen kula da zafin jiki, matsa lamba, yawan iskar gas da ƙaddamar da ƙaddamarwa yana da mahimmanci don cimma abubuwan da ake so na fim, ciki har da kauri, tsabta, crystallinity da adhesion.
Ⅲ. Amfani da CVD SiC Coatings a cikin Tsarin Semiconductor
CVD SiC rufin ba makawa ne a masana'antar semiconductor saboda keɓaɓɓen haɗe-haɗe na kaddarorin kai tsaye sun dace da matsananciyar yanayi da ƙaƙƙarfan buƙatun tsabta na yanayin masana'anta. Suna haɓaka juriya ga lalatawar plasma, harin sinadarai, da ƙirar barbashi, duk waɗanda ke da mahimmanci don haɓaka yawan amfanin wafer da lokacin kayan aiki.
Wadannan su ne wasu sassa na CVD SiC na gama gari da yanayin aikace-aikacen su:
1. Plasma Etching Chamber da Focus Zobe
Kayayyaki: CVD SiC rufaffiyar liyu, ruwan shawa, susceptors, da zoben mayar da hankali.
Aikace-aikace: A cikin etching plasma, ana amfani da plasma mai aiki sosai don zaɓin cire kayan daga wafers. Kayan da ba su da rufi ko ƙasa da ƙasa suna raguwa da sauri, yana haifar da gurɓataccen ƙwayar cuta da raguwar lokaci akai-akai. CVD SiC coatings suna da kyakkyawan juriya ga magungunan plasma masu haɗari (misali, fluorine, chlorine, bromine plasmas), tsawaita rayuwar maɓalli mai mahimmanci, da rage ƙwayar ƙwayar cuta, wanda kai tsaye yana ƙara yawan amfanin ƙasa.
2.PECVD da HDPCVD dakunan
Kayayyaki: CVD SiC mai rufin ɗakuna da na'urorin lantarki.
Aikace-aikace: Plasma ingantacciyar tururin tururi (PECVD) da babban plasma CVD (HDPCVD) ana amfani da su don adana fina-finai na bakin ciki (misali, yadudduka dielectric, yadudduka passivation). Waɗannan matakan kuma sun haɗa da mummuna mahallin plasma. CVD SiC yana kare bangon ɗaki da na'urorin lantarki daga lalacewa, tabbatar da daidaiton ingancin fim da rage lahani.
3. Ion kayan aikin dasawa
Kayayyaki: CVD SiC masu rufin katako mai rufi (misali, apertures, kofuna na Faraday).
Aikace-aikace: Ion implantation yana gabatar da dopant ions a cikin substrates semiconductor. Ƙarfin ion mai ƙarfi na iya haifar da sputtering da zaizayar abubuwan da aka fallasa. Tauri da babban tsabta na CVD SiC yana rage tsararrun ɓangarorin daga abubuwan haɗin katako, hana gurɓata wafers yayin wannan muhimmin matakin doping.
4. Epitaxial reactor sassa
Kayayyaki: CVD SiC mai rufaffiyar susceptors da masu rarraba gas.
Aikace-aikaceGirman Epitaxial (EPI) ya ƙunshi haɓaka yadudduka na crystalline da aka ba da oda sosai akan ma'aunin zafi. CVD SiC masu rufaffiyar susceptors suna ba da kyakkyawan kwanciyar hankali na thermal da rashin kuzarin sinadarai a yanayin zafi mai girma, yana tabbatar da dumama iri ɗaya da hana gurɓata mai cutar kansa, wanda ke da mahimmanci don cimma manyan yadudduka na epitaxial.
Kamar yadda guntu geometries ke raguwa da buƙatun aiwatarwa ke ƙaruwa, buƙatun masu siyar da kayan kwalliyar CVD SiC masu inganci da masu kera suturar CVD suna ci gaba da haɓaka.
IV. Menene kalubale na CVD SiC shafi tsarin?
Duk da babban fa'idodin CVD SiC shafi, masana'anta da aikace-aikacen sa har yanzu suna fuskantar wasu ƙalubalen tsari. Magance waɗannan ƙalubalen shine mabuɗin don cimma daidaiton aiki da ƙimar farashi.
Kalubale:
1. Adhesion zuwa substrate
SiC na iya zama ƙalubale don cimma ƙarfi da daidaituwa iri ɗaya ga kayan ƙasa daban-daban (misali, graphite, silicon, yumbu) saboda bambance-bambance a cikin haɓakar haɓakar thermal da makamashin saman. Rashin mannewa mara kyau na iya haifar da lalatawa yayin hawan hawan zafi ko damuwa na inji.
Magani:
Shirye-shiryen saman: Tsaftace mai tsafta da jiyya na sama (misali, etching, jiyya na plasma) na substrate don cire gurɓataccen abu da ƙirƙirar mafi kyawun farfajiya don haɗawa.
Interlayer: Ajiye wani bakin ciki da na musamman na tsaka-tsaki ko mai ɗaukar hoto (misali, carbon pyrolytic, TaC - mai kama da CVD TaC shafi a cikin takamaiman aikace-aikacen) don rage rashin daidaituwa na haɓakar thermal da haɓaka mannewa.
Haɓaka sigogin ajiya: Kula da zafin jiki a hankali, matsa lamba, da rabon iskar gas don haɓaka haɓakawa da haɓakar fina-finai na SiC da haɓaka haɓakar haɗin gwiwa mai ƙarfi.
2. Damuwar Fim da Fatsawa
Lokacin sanyawa ko sanyaya na gaba, damuwa na iya tasowa a cikin fina-finan SiC, haifar da tsagewa ko warping, musamman akan manyan geometries ko hadaddun.
Magani:
Kula da Zazzabi: Daidai sarrafa dumama da yawan sanyaya don rage zafin zafi da damuwa.
Tufafin GradientYi amfani da multilayer ko hanyoyin sutura don canza abubuwa a hankali ko tsari don ɗaukar damuwa.
Bayan Deposition Annealing: Anneal sassan da aka rufe don kawar da ragowar damuwa da inganta amincin fim.
3. Daidaituwa da Daidaituwa akan Complex Geometries
Ajiye riguna masu kauri da kauri iri ɗaya akan sassa masu hadaddun sifofi, babban al'amari, ko tashoshi na ciki na iya zama da wahala saboda iyakancewa a cikin yaɗuwar farko da motsin motsi.
Magani:
Reactor Design Haɓaka: Zane CVD reactors tare da ingantattun kuzarin kwararar iskar gas da daidaiton zafin jiki don tabbatar da rarraba iri ɗaya na precursors.
Daidaita Ma'aunin Tsari: Matsa lamba mai kyau-tune, adadin kwarara, da ƙaddamarwa na farko don haɓaka yaduwar lokacin iskar gas cikin sifofi masu rikitarwa.
Adadin matakai da yawa: Yi amfani da matakai na ci gaba ko jujjuyawa don tabbatar da cewa duk saman an lulluɓe su sosai.
V. FAQ
Q1: Menene babban bambanci tsakanin CVD SiC da PVD SiC a aikace-aikacen semiconductor?
A: Abubuwan CVD sune tsarin kristal na columnar tare da tsabta> 99.99%, dace da yanayin plasma; Abubuwan PVD galibi suna amorphous/nanocrystalline tare da tsaftar <99.9%, galibi ana amfani da su don kayan ado.
Q2: Menene matsakaicin zafin jiki wanda rufi zai iya jurewa?
A: Haƙuri na ɗan gajeren lokaci na 1650 ° C (kamar tsarin annealing), iyakar amfani da dogon lokaci na 1450 ° C, wuce wannan zafin jiki zai haifar da canjin lokaci daga β-SiC zuwa α-SiC.
Q3: Yawan shafi kauri kewayon?
A: Semiconductor aka gyara su ne mafi yawa 80-150μm, da jirgin sama engine EBC coatings iya isa 300-500μm.
Q4: Menene mahimman abubuwan da ke shafar farashi?
A: Tsaftace na gaba (40%), amfani da makamashi na kayan aiki (30%), asarar yawan amfanin ƙasa (20%). Farashin naúrar manyan kayan kwalliyar na iya kaiwa $5,000/kg.
Q5: Menene manyan masu samar da kayayyaki na duniya?
A: Turai da Amurka: CoorsTek, Mersen, Ionbond; Asiya: Semixlab, Veteksemicon, Kalex (Taiwan), Kimiyya (Taiwan)
Lokacin aikawa: Juni-09-2025