Abubuwan da aka Rufe na CVD SiC don Silicon Epitaxy (Si Epi)
An ƙera shi da kyau don tsarin adanawa na Silicon Epitaxial guda ɗaya da kuma batch, masu hana ruwa gudu na CVD SiC, faifan tauraron ɗan adam, da kuma sassan filin zafi suna ba da daidaiton zafi mai kyau da kuma rashin fitar da iskar gas. Babban Layer mai siffar cubic β-SiC yana rufe substrate mai tsabta sosai, yana hana gurɓatar iskar gas (SiH₄, SiH₂Cl₂, HCl) kuma yana ba da tabbacin matakan ƙazanta na ƙarfe (< 5 ppm) yayin sarrafa Si Epi mai zafi (1000°C - 1200°C).
Ƙarfin fitar da iska mai sarrafawa yana tabbatar da daidaiton kauri na fim ɗin wafer daga gefe zuwa tsakiya.
Yana ba da kariya mai ƙarfi daga sinadarai masu tsaftace ɗakin da ke cikinsa da kuma girgizar zafi.
An ƙera CNC mai inganci don dacewa da kayan aikin Epi guda ɗaya mai girman 200mm/300mm (Kayan da aka yi amfani da su, ASM).
| Sigar Fasaha | Ƙimar Ƙayyadewa | Hanyar Daidaitacce / Gwaji |
|---|---|---|
| Kayan Shafi | CVD β-SiC (Matsayi na Cubic) | Tsarin Crystalline Mai Yawan Yawa |
| Kayan Substrate | Graphite mai tsarki na Ultra-Pure | Yawan yawa: 1.82 - 1.88 g/cm³ |
| Tsarkakewar Sinadarai | Jimlar ƙazanta < 5 ppm | An Gwada GDMS |
| Kauri na Rufi | 80 μm - 150 μm | Daidaito ≤ ±5% |
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