Menene TaC Coating?

A cikin masana'antar semiconductor mai saurin haɓakawa, kayan da ke haɓaka aiki, dorewa, da inganci suna da mahimmanci. Ɗayan irin wannan sabon abu shine Tantalum Carbide (TaC) shafi, wani yanki mai karewa mai yankewa wanda aka yi amfani da shi ga kayan aikin graphite. Wannan shafin yana bincika ma'anar shafi na TaC, fa'idodin fasaha, da aikace-aikacen sa masu canzawa a masana'antar semiconductor.

Ⅰ. Menene TaC Coating?

TaC shafi ne mai babban aiki yumbu Layer wanda ya ƙunshi tantalum carbide (wani fili na tantalum da carbon) wanda aka ajiye akan saman graphite. Yawanci ana amfani da suturar ta hanyar amfani da Dabarun Turin Tufafi (CVD) ko Dabarun Turin Jiki (PVD), ƙirƙirar shinge mai zurfi, mai tsafta wanda ke kare graphite daga matsanancin yanayi.

Maɓallai Maɓalli na TaC Coating

●Tsananin Zazzabi Mai Girma: Yana jure yanayin zafi sama da 2200C, wanda ya zarce kayan gargajiya kamar silicon carbide (SiC), wanda ya ragu sama da 1600°C.

●Juriya na Chemical: Yana tsayayya da lalata daga hydrogen (H₂), ammonia (NH₃), silicon vapors, da narkakken karafa, mai mahimmanci ga yanayin sarrafa semiconductor.

●Ultra-High TsaftaMatakan ƙazanta da ke ƙasa da 5 ppm, rage haɗarin kamuwa da cuta a cikin matakan girma na crystal.

●Ƙarfin Ƙarfafawa da Makanikai: Ƙarfin mannewa zuwa graphite, ƙananan haɓakar thermal (6.3 × 10⁻⁶ / K), da taurin (~ 2000 HK) yana tabbatar da tsawon rai a ƙarƙashin hawan keke.

Ⅱ. Rufin TaC a Masana'antar Semiconductor: Maɓallin Aikace-aikace

Abubuwan abubuwan graphite masu rufaffiyar TaC suna da mahimmanci a cikin ƙirƙira semiconductor na ci gaba, musamman ga na'urorin silicon carbide (SiC) da gallium nitride (GaN). A ƙasa akwai shari'o'in amfani da su masu mahimmanci:

1. Ci gaban SiC Single Crystal

SiC wafers suna da mahimmanci ga lantarki da motocin lantarki. Ana amfani da crucibles graphite mai rufaffiyar TaC da masu cutarwa a cikin Tsarin Jirgin Ruwa na Jiki (PVT) da Tsarin CVD mai zafi (HT-CVD) zuwa:

● Kashe gurɓatawa: Ƙananan ƙazanta na TaC (misali, boron <0.01 ppm vs. 1 ppm a cikin graphite) yana rage lahani a cikin lu'ulu'u na SiC, inganta ƙarfin wafer (4.5 ohm-cm vs. 0.1 ohm-cm don graphite maras kyau).

● Haɓaka Gudanar da Zazzabi: Uniform watsi (0.3 a 1000 ° C) yana tabbatar da daidaitaccen rarraba zafi, yana inganta ingancin crystal.

2. Ci gaban Epitaxial (GaN/SiC)

A cikin injina na ƙarfe-Organic CVD (MOCVD), abubuwan da aka rufa da TaC kamar masu ɗaukar wafer da injectors:

●Hana Halayen Gas: Yana tsayayya da etching ta ammonia da hydrogen a 1400 ° C, yana kiyaye amincin reactor.

●Inganta Haɓakawa: Ta rage zubar da barbashi daga graphite, CVD TaC shafi yana rage lahani a cikin yadudduka na epitaxial, mahimmanci ga manyan LEDs da na'urorin RF.

3. Sauran Semiconductor Applications

●Ma'aunin zafi da sanyio: Masu maye da dumama a cikin samar da GaN suna amfana da kwanciyar hankali ta TaC a cikin mahalli masu wadatar hydrogen.

●Wafer Handling: Abubuwan da aka rufa kamar zobba da murfi suna rage gurɓataccen ƙarfe yayin canja wurin wafer

Ⅲ. Me yasa Rufin TaC ya fi dacewa?

Kwatanta tare da kayan yau da kullun yana nuna fifikon TaC:

Bayanan da aka samo daga kwatancen masana'antu

IV. Me yasa zabar VET?

Bayan ci gaba da saka hannun jari a cikin bincike da haɓaka fasahar fasaha,VET's Tantalum carbide (TaC) rufaffiyar sassa, kamarTaC mai rufin jagorar graphite, CVD TaC Mai rufi mai rufi, TaC Mai Rufaffen Susceptor don Kayan Aikin Epitaxy,Tantalum carbide mai rufaffiyar kayan graphite mai laushikumaWafer susceptor tare da TaC shafi, sun shahara sosai a kasuwannin Turai da Amurka. VET da gaske na fatan zama abokin tarayya na dogon lokaci.