Sassan Epitaxial na SiC

Rufin CVD na Ci gaba don Ci gaban Epitaxial na SiC

An ƙera shi don na'urorin semiconductor masu ƙarfi waɗanda ke aiki a ƙarƙashin matsin lamba mai tsanani (1500°C - 1700°C), an gina na'urorin kariya na duniya masu rufi na CVD SiC da TaC, faifan tauraron ɗan adam, da masu katse iskar gas don su yi fice. An ƙera shi don hana samar da barbashi, lalacewar saman, da kuma lalata iskar gas mai amsawa (H₂, SiH₄, C₃H∯), rufinmu na zamani yana tabbatar da tsawon rai na aiki, ingantaccen sarrafa dopant, da daidaiton kauri mai yawa a duk faɗin.Wafers ɗin epitaxial SiC mai inci 6 da inci 8.

Tsarin Zafin Jiki Mai Tsanani

Yana da kwanciyar hankali har zuwa 1700°C a cikin yanayin da ke rage H₂/silane mai tsanani.

Daidaita CTE mai digiri

Yana kawar da lalacewar shafi, ƙananan fasawa, da kuma fashewa a lokacin zagayowar zafi mai sauri.

Shirye-shiryen Sikelin Wafer na Inci 8

Injin CNC mai inganci wanda aka ƙera don masu samar da wutar lantarki na SiC Epi masu ƙarfin aiki na zamani (LPE, Aixtron, Nuflare).

Sigar Fasaha	Ƙimar Ƙayyadewa	Hanyar Daidaitacce / Gwaji
Zaɓuɓɓukan Kayan Rufi	CVD SiC / Tantalum Carbide (TaC)	Babban Tsarkakakken Tsarin Hermetic Layer
Tushen ƙasa	Graphite Mai Tsarkakewa	Rashin tsarkin jiki < 5 ppm
Juriyar Girgizar Zafi	Delta T > 500°C Matsayin Ramp	Babu Tsagewa / Barewa
Taurin saman (Ra)	≤ 0.4 μm (An goge madubi)	Yana Hana Mannewa da Ƙwayoyin Wafer