Bukatun masana'antar Semiconductor na buƙatun kayan graphite suna da girma musamman, girman barbashi mai kyau na graphite yana da babban daidaito, juriya mai zafi, ƙarfi mai yawa, ƙaramin asara da sauran fa'idodi, kamar: samfuran graphite masu sintered mold.Saboda ana buƙatar kayan aikin graphite da ake amfani da su a masana'antar semiconductor (gami da masu dumama da kuma injinan da aka yi musu sintered) su jure wa dumama da sanyaya akai-akai, domin tsawaita rayuwar kayan aikin graphite, yawanci ana buƙatar kayan graphite da ake amfani da su suna da aiki mai ƙarfi da kuma aikin da ke jure zafi.
01 Kayan haɗin Graphite don haɓaka lu'ulu'u na semiconductor
Duk hanyoyin da ake amfani da su wajen noman lu'ulu'u na semiconductor suna aiki a ƙarƙashin yanayin zafi mai yawa da kuma lalata. Yankin zafi na tanderun girma na lu'ulu'u yawanci yana da kayan aikin graphite masu jure zafi da kuma juriya ga tsatsa, kamar su hita, crucible, insulation silinda, guide silinda, electrode, crucible holder, electrode goro, da sauransu.
Za mu iya ƙera dukkan sassan graphite na na'urorin samar da lu'ulu'u, waɗanda za a iya samar da su daban-daban ko a cikin saiti, ko kuma sassan graphite na musamman masu girma dabam-dabam bisa ga buƙatun abokin ciniki. Ana iya auna girman samfuran a wurin, kuma yawan tokar da ke cikin kayayyakin da aka gama na iya zama ƙasa da haka.fiye da 5ppm.
02 Kayan haɗin Graphite don epitaxy na semiconductor
Tsarin Epitaxial yana nufin ci gaban wani Layer na kayan lu'ulu'u guda ɗaya tare da tsarin lattice iri ɗaya kamar substrate akan substrate guda ɗaya. A cikin tsarin epitaxial, ana ɗora wafer akan faifai na graphite. Aiki da ingancin faifai na graphite suna taka muhimmiyar rawa a cikin ingancin Layer na epitaxial na wafer. A fannin samar da epitaxial, ana buƙatar graphite mai tsarki mai yawa da tushen graphite mai tsarki mai tsarki tare da rufin SIC.
Tushen graphite na kamfaninmu don epitaxy na semiconductor yana da aikace-aikace iri-iri, yana iya dacewa da yawancin kayan aikin da ake amfani da su a masana'antar, kuma yana da tsarki mai yawa, rufin iri ɗaya, kyakkyawan rayuwar sabis, da juriya ga sinadarai da kwanciyar hankali na zafi.
03 Kayan haɗin graphite don dasa ion
Dasa ion yana nufin tsarin hanzarta hasken plasma na boron, phosphorus da arsenic zuwa wani makamashi, sannan a saka shi a cikin saman kayan wafer don canza halayen kayan Layer na saman. Ya kamata a yi sassan na'urar dasa ion da kayan tsarki masu kyau tare da kyakkyawan juriya ga zafi, kwararar zafi, ƙarancin tsatsa da hasken ion ke haifarwa da ƙarancin ƙazanta. Graphite mai tsarki ya cika buƙatun aikace-aikacen, kuma ana iya amfani da shi don bututun tashi, ramuka daban-daban, electrodes, murfin electrode, bututu, masu ƙare katako, da sauransu na kayan aikin dasa ion.
Ba wai kawai za mu iya samar da murfin kariya na graphite ga injunan dasa ion daban-daban ba, har ma za mu iya samar da na'urorin lantarki masu tsabta da tushen ion masu juriya ga tsatsa na takamaiman bayanai daban-daban. Samfuran da suka dace: Eaton, Azcelis, Quatum, Varian, Nissin, AMAT, LAM da sauran kayan aiki. Bugu da ƙari, za mu iya samar da samfuran yumbu, tungsten, molybdenum, aluminum da sassan da aka shafa.
04 Kayan rufin graphite da sauransu
Kayan kariya daga zafi da ake amfani da su a cikin kayan aikin samar da semiconductor sun haɗa da jifa mai tauri na graphite, jifa mai laushi, foil na graphite, takarda graphite, da igiyar graphite.
Duk kayanmu an shigo da su ne daga ƙasashen waje, wanda za a iya yanke shi gwargwadon girman buƙatun abokin ciniki ko kuma a sayar da shi gaba ɗaya.
Ana amfani da tiren carbon-carbon a matsayin abin ɗaukar fim ɗin da za a yi amfani da shi wajen samar da silicon monocrystalline na hasken rana da ƙwayoyin silicon polycrystalline. Ka'idar aiki ita ce: saka guntun silicon a cikin tiren CFC sannan a aika shi cikin bututun tanderu don sarrafa murfin fim ɗin.
