Menene rufin sic? - Makamashin VET

Silicon Carbidewani abu ne mai tauri wanda ke ɗauke da silicon da carbon, kuma ana samunsa a yanayi a matsayin moissanite na ma'adinai mai matuƙar wahalar samu. Ana iya haɗa ƙwayoyin silicon carbide tare ta hanyar yin sintering don samar da yumbu mai tauri, wanda ake amfani da shi sosai a aikace-aikace masu buƙatar ƙarfi mai yawa, musamman a cikin jerin semiconductor.

Tsarin jiki na SiC

Menene Shafi na SiC?

Rufin SiC wani rufi ne mai kauri, mai jure lalacewa, mai juriya ga tsatsa da zafi, da kuma kyakkyawan yanayin zafi. Ana amfani da wannan rufin SiC mai tsabta a masana'antar semiconductor da lantarki don kare masu ɗaukar wafer, tushe da abubuwan dumama daga muhallin da ke lalata da lalacewa. Rufin SiC kuma ya dace da murhun injinan ...

Babban tsarkin SiC shafi saman

Menene tsarin shafi na SiC?

Ana sanya siririn silicon carbide a saman substrate ta amfani daCVD (Sinadarin Tururin Sinadari)Ana yin ajiyar bayanai a yanayin zafi na 1200-1300°C kuma yanayin faɗaɗa zafi na kayan substrate ya kamata ya dace da rufin SiC don rage damuwa ta zafi.

Tsarin Fim ɗin CVD SIC na Crystal

Tsarin Fim ɗin CVD SIC mai rufi

Abubuwan da ke cikin rufin SiC galibi suna nuna su ne a cikin juriyar zafin jiki mai yawa, taurinsa, juriyar tsatsa da kuma yanayin zafi.

Sigogi na zahiri na yau da kullun yawanci kamar haka:

Tauri: Rufin SiC yawanci yana da ƙarfin Vickers a cikin kewayon 2000-2500 HV, wanda ke ba su juriya sosai ga lalacewa da tasiri a aikace-aikacen masana'antu.

Yawan yawa: Rufin SiC yawanci yana da yawan 3.1-3.2 g/cm³. Babban yawan yana taimakawa wajen ƙarfafa injina da dorewar murfin.

Maida wutar lantarki ta thermal: Rufin SiC yana da babban ƙarfin lantarki na thermal, yawanci yana tsakanin 120-200 W/mK (a 20°C). Wannan yana ba shi kyakkyawan ƙarfin lantarki na thermal a cikin yanayin zafi mai yawa kuma yana sa ya dace musamman don kayan aikin maganin zafi a masana'antar semiconductor.

Wurin narkewa: silicon carbide yana da wurin narkewa na kimanin 2730°C kuma yana da kyakkyawan kwanciyar hankali na zafi a yanayin zafi mai tsanani.

Ma'aunin Faɗaɗawar Zafi: Rufin SiC yana da ƙarancin layin layin faɗaɗa zafi (CTE), yawanci yana cikin kewayon 4.0-4.5 µm/mK (a cikin 25-1000℃). Wannan yana nufin cewa daidaiton girmansa yana da kyau idan aka kwatanta da manyan bambance-bambancen zafin jiki.

Juriyar lalata: Rufin SiC yana da matuƙar juriya ga tsatsa a cikin yanayi mai ƙarfi na acid, alkali da oxidizing, musamman lokacin amfani da acid mai ƙarfi (kamar HF ko HCl), juriyarsu ta tsatsa ta fi ta kayan ƙarfe na gargajiya.

SiC shafi substrate aikace-aikace

Sau da yawa ana amfani da shafi na SiC don inganta juriyar tsatsa, juriyar zafi mai yawa, da juriyar zaizayar ƙasa ta plasma na substrate. Abubuwan da aka fi amfani da su sun haɗa da waɗannan:

Nau'in substrate	Dalilin aikace-aikacen	Amfani na yau da kullun
Graphite	- Tsarin haske, kyakkyawan watsa wutar lantarki - Amma wanda plasma ke lalata shi cikin sauƙi, yana buƙatar kariyar murfin SiC	Sassan ɗakin injin tsotsa, jiragen ruwa na graphite, tiren fesa jini, da sauransu.
Ma'adini (Quartz/SiO₂)	- Tsarkakakken abu amma yana da sauƙin lalacewa - Rufi yana ƙara juriya ga zaizayar jini a cikin plasma	Sassan ɗakin CVD/PECVD
Gilashin yumbu (kamar alumina Al₂O₃)	- Babban ƙarfi da tsarin barga - Rufi yana inganta juriyar tsatsa a saman	Rufin ɗakin, kayan aiki, da sauransu.
ƙarfe (kamar molybdenum, titanium, da sauransu)	- Kyakkyawan watsawar zafi amma rashin juriya ga lalata - Rufi yana inganta daidaiton saman	Musamman aikin dauki aka gyara
Jikin simintin silicon carbide (SiC girma)	- Don muhallin da ke da manyan buƙatu don yanayin aiki mai rikitarwa - Rufi yana ƙara inganta tsarki da juriya ga tsatsa	Manyan sassan ɗakin CVD/ALD

Ana amfani da samfuran da aka rufe da SiC a cikin waɗannan yankuna na semiconductor masu zuwa

Ana amfani da kayayyakin shafa SiC sosai a fannin sarrafa semiconductor, galibi a yanayin zafi mai yawa, tsatsa mai yawa da kuma yanayin plasma mai ƙarfi. Ga wasu manyan hanyoyin aikace-aikace ko fannoni da kuma taƙaitaccen bayani:

Tsarin aikace-aikace/filin	Takaitaccen bayani	Aikin Shafawa na Silicon Carbide
Gyaran Plasma (Etching)	Yi amfani da iskar gas mai tushen fluorine ko chlorine don canja wurin tsari	Kare kanka daga zaftarewar jini da kuma hana gurɓatar ƙwayoyin cuta da ƙarfe
Tace tururin sinadarai (CVD/PECVD)	Zubar da oxide, nitride da sauran siraran fim	Tsayayya ga iskar gas mai lalata da kuma ƙara tsawon rayuwar sassan
Ɗakin ajiyar tururi na zahiri (PVD)	Bombardment mai ƙarfi mai ƙarfi yayin aikin shafa	Inganta juriyar zaizayar ƙasa da juriyar zafi na ɗakin amsawa
Tsarin MOCVD (kamar SiC epitaxial girma)	Maganin dogon lokaci a ƙarƙashin yanayin zafi mai yawa da kuma yanayin gurɓataccen iskar hydrogen	Kula da kwanciyar hankali na kayan aiki da kuma hana gurɓatar lu'ulu'u masu girma
Tsarin maganin zafi (LPCVD, yaɗuwa, annealing, da sauransu)	Yawanci ana yin sa ne a yanayin zafi mai yawa da kuma injin/yanayi mai kyau	Kare jiragen ruwa da tiren graphite daga iskar shaka ko tsatsa
Mai ɗaukar wafer/chuck (manna wafer)	Tushen graphite don canja wurin wafer ko tallafi	Rage zubar da ƙwayoyin cuta da kuma guje wa gurɓatar hulɗa da su
Abubuwan da aka haɗa a ɗakin ALD	Sau da yawa kuma daidai wajen sarrafa ajiyar Layer na atomic	Rufin yana kiyaye ɗakin tsabta kuma yana da juriya mai ƙarfi ga abubuwan da suka riga suka fara lalacewa

Me yasa za a zaɓi VET Energy?

VET Energy babban kamfani ne mai kera kayayyaki, mai ƙirƙira da kuma jagora a fannin kayayyakin shafa SiC a China, manyan kayayyakin shafa SiC sun haɗa damai ɗaukar wafer tare da murfin SiC, An rufe SiCmai hana epitaxial, Zoben graphite mai rufi na SiC, Sassan rabin wata tare da shafi na SiC, Haɗin carbon-carbon mai rufi na SiC, Jirgin ruwan wafer mai rufi na SiC, hita mai rufi na SiCda sauransu. VET Energy ta himmatu wajen samar wa masana'antar semiconductor mafita ta fasaha da samfura, kuma tana tallafawa ayyukan keɓancewa. Muna fatan zama abokin hulɗarku na dogon lokaci a China.