He aha nā pale loea i ka silicon carbide? II

ʻO nā pilikia loea i ka hana paʻa ʻana i nā wafers silicon carbide kiʻekiʻe me ka hana paʻa:

1) ʻOiai pono nā kristal e ulu i loko o kahi ʻano sila wela kiʻekiʻe ma luna o 2000°C, kiʻekiʻe loa nā koi kaohi mahana;
2) ʻOiai ʻoi aku ka nui o nā ʻano kristal o ka silicon carbide ma mua o 200, akā he kakaikahi wale nō nā ʻano o ka silicon carbide kristal hoʻokahi nā mea semiconductor e pono ai, pono e hoʻomalu pono ʻia ka lakio silicon-to-carbon, ka gradient mahana ulu, a me ka ulu ʻana o ka kristal i ka wā o ke kaʻina ulu kristal. Nā palena e like me ka wikiwiki a me ke kaomi o ke ea;
3) Ma lalo o ke ʻano hoʻoili ʻana o ka mahu, he mea paʻakikī loa ka ʻenehana hoʻonui diameter o ka ulu ʻana o ka kristal silicon carbide;
4) Ua kokoke ka paʻakikī o ka silicon carbide i ko ka daimana, a he paʻakikī nā ʻano hana ʻoki, wili, a me ka hoʻopili ʻana.

ʻO nā wafers epitaxial SiC: hana pinepine ʻia e ke ʻano hoʻokaʻawale mahu kemika (CVD). Wahi a nā ʻano doping like ʻole, ua māhele ʻia lākou i nā wafers epitaxial ʻano-n a me ke ʻano-p. Hiki iā Hantian Tiancheng kūloko a me Dongguan Tianyu ke hāʻawi mua i nā wafers epitaxial SiC 4-ʻīniha/6-ʻīniha. No ka epitaxy SiC, he paʻakikī ke kaohi i ke kahua voltage kiʻekiʻe, a ʻoi aku ka hopena o ka maikaʻi o ka epitaxy SiC i nā mea SiC. Eia kekahi, ua hoʻopaʻa ʻia nā lako epitaxial e nā ʻoihana alakaʻi ʻehā o ka ʻoihana: Axitron, LPE, TEL a me Nuflare.

ʻO ka epitaxial silicon carbideʻO ka wafer e pili ana i kahi wafer silicon carbide kahi i ulu ai kahi kiʻiʻoniʻoni kristal hoʻokahi (papa epitaxial) me kekahi mau koi a like me ke kristal substrate ma luna o ka substrate silicon carbide mua. Hoʻohana nui ka ulu ʻana o Epitaxial i nā lako CVD (Chemical Vapor Deposition,) a i ʻole nā ​​​​lako MBE (Molecular Beam Epitaxy). ʻOiai ua hana pololei ʻia nā mea silicon carbide i loko o ka papa epitaxial, pili pololei ka maikaʻi o ka papa epitaxial i ka hana a me ka hua o ka hāmeʻa. Ke hoʻomau nei ka piʻi ʻana o ka hana kū i ke voltage o ka hāmeʻa, e mānoanoa ka mānoanoa o ka papa epitaxial e pili ana a lilo ka mana i mea paʻakikī. Ma ke ʻano laulā, i ka wā e pili ana ka voltage i ka 600V, ʻo ka mānoanoa o ka papa epitaxial i koi ʻia ma kahi o 6 microns; i ka wā e pili ana ka voltage i ka 1200-1700V, hiki i ka mānoanoa o ka papa epitaxial i koi ʻia i 10-15 microns. Inā hiki ka voltage ma mua o 10,000 volts, pono paha ka mānoanoa o ka papa epitaxial ma mua o 100 microns. I ka hoʻomau ʻana o ka mānoanoa o ka papa epitaxial e piʻi aʻe ana, e lilo ana ia i mea paʻakikī ke kaohi i ka mānoanoa a me ke kūlike o ka resistivity a me ka nui o nā hemahema.

Nā mea hana SiC: Ma ka honua holoʻokoʻa, ua hoʻomohala ʻia nā 600 ~ 1700V SiC SBD a me MOSFET. Hana nā huahana nui ma nā pae uila ma lalo o 1200V a hoʻohana nui i ka ʻōpala TO. Ma ke ʻano o ke kumukūʻai, ua kūʻai ʻia nā huahana SiC ma ka mākeke honua ma kahi o 5-6 mau manawa kiʻekiʻe ma mua o ko lākou mau hoa Si. Eia nō naʻe, ke emi nei nā kumukūʻai ma ka helu makahiki o 10%. me ka hoʻonui ʻana o nā mea hana a me ka hana ʻana o nā mea hana i nā makahiki 2-3 e hiki mai ana, e hoʻonui ʻia ka lako mākeke, e alakaʻi ana i nā hōʻemi kumukūʻai hou aʻe. Manaʻo ʻia i ka wā e hiki ai ke kumukūʻai i 2-3 mau manawa o nā huahana Si, ʻo nā pono i lawe ʻia e ka hoʻemi ʻana i nā kumukūʻai ʻōnaehana a me ka hana i hoʻomaikaʻi ʻia e hoʻokele mālie iā SiC e noho i ka mākeke o nā mea hana Si.
Hoʻokumu ʻia ka ʻōpala kuʻuna ma nā substrates i hoʻokumu ʻia i ka silicon, ʻoiai ʻo nā mea semiconductor hanauna ʻekolu e koi ana i kahi hoʻolālā hou loa. ʻO ka hoʻohana ʻana i nā ʻano ʻōpala kuʻuna i hoʻokumu ʻia i ka silicon no nā mea mana ākea-bandgap hiki ke hoʻolauna i nā pilikia hou a me nā pilikia e pili ana i ka alapine (frequency), ka hoʻokele wela, a me ka hilinaʻi. ʻOi aku ka maʻalahi o nā mea mana SiC i ka capacitance parasitic a me ka inductance. Ke hoʻohālikelike ʻia me nā mea Si, ʻoi aku ka wikiwiki o ka hoʻololi ʻana o nā chips mana SiC, hiki ke alakaʻi i ka overshoot, oscillation, ka hoʻonui ʻana i nā pohō hoʻololi, a me nā hana hewa o ka mea hana. Eia kekahi, hana nā mea mana SiC i nā mahana kiʻekiʻe, e koi ana i nā ʻano hana hoʻokele wela holomua.

Ua hoʻomohala ʻia nā ʻano ʻano like ʻole ma ke kahua o ka hoʻopili mana semiconductor ākea-bandgap. ʻAʻole kūpono hou ka hoʻopili modula mana kuʻuna ma muli o Si. I mea e hoʻoponopono ai i nā pilikia o nā palena parasitic kiʻekiʻe a me ka pono hoʻoheheʻe wela maikaʻi ʻole o ka hoʻopili modula mana kuʻuna ma muli o Si, hoʻohana ka hoʻopili modula mana SiC i ka pilina uea ʻole a me ka ʻenehana hoʻoluʻu ʻelua ʻaoʻao i loko o kona ʻano, a hoʻohana pū i nā mea substrate me ka conductivity thermal maikaʻi aʻe, a hoʻāʻo e hoʻohui i nā capacitors decoupling, nā sensor mahana/aupuni, a me nā kaapuni hoʻokele i loko o ka hoʻonohonoho modula, a hoʻomohala i nā ʻano ʻenehana hoʻopili modula like ʻole. Eia kekahi, aia nā pale loea kiʻekiʻe i ka hana ʻana o nā hāmeʻa SiC a kiʻekiʻe nā kumukūʻai hana.

Hana ʻia nā mea hana Silicon carbide ma ke kau ʻana i nā papa epitaxial ma luna o kahi substrate silicon carbide ma o CVD. Pili ke kaʻina hana i ka hoʻomaʻemaʻe, ka oxidation, photolithography, etching, ka wehe ʻana i ka photoresist, ka ion implantation, ka hoʻokomo ʻana i ka mahu kemika o ka silicon nitride, ka polishing, ka sputtering, a me nā ʻanuʻu hana ma hope e hana i ke ʻano o ka mea hana ma ka substrate SiC hoʻokahi kristal. ʻO nā ʻano nui o nā mea hana mana SiC e pili ana i nā diode SiC, nā transistors SiC, a me nā modula mana SiC. Ma muli o nā mea e like me ka lohi o ka wikiwiki o ka hana ʻana o nā mea upstream a me nā helu hua haʻahaʻa, he kiʻekiʻe ke kumukūʻai hana o nā mea hana silicon carbide.

Eia kekahi, aia kekahi mau pilikia loea i ka hana ʻana o nā mea hana silicon carbide:

1) Pono e hoʻomohala i kahi kaʻina hana kikoʻī e kūlike me nā ʻano o nā mea silicon carbide. No ka laʻana: He kiʻekiʻe ke kiko heheʻe o SiC, ka mea e hoʻolilo ai i ka hoʻolaha wela kuʻuna i mea ʻole. Pono e hoʻohana i ke ʻano doping implantation ion a kāohi pololei i nā palena e like me ka mahana, ka wikiwiki o ka hoʻomehana, ka lōʻihi, a me ke kahe kinoea; He inert ʻo SiC i nā mea hoʻoheheʻe kemika. Pono e hoʻohana ʻia nā ʻano e like me ke etching maloʻo, a pono e hoʻomaikaʻi ʻia a hoʻomohala ʻia nā mea uhi maka, nā hui kinoea, ka kaohi ʻana i ka pali ʻaoʻao, ka wikiwiki o ke etching, ka ʻino o ka ʻaoʻao, a pēlā aku;
2) ʻO ka hana ʻana o nā electrodes metala ma nā wafers silicon carbide e pono ai ke kū'ē pili ma lalo o 10-5Ω2. ʻO nā mea electrode e hoʻokō ana i nā koi, ʻo Ni a me Al, he paʻa wela maikaʻi ʻole ma luna o 100°C, akā ʻoi aku ka maikaʻi o ke kūpaʻa wela o Al/Ni. ʻOi aku ke kiʻekiʻe o ke kū'ē pili kikoʻī o ka mea electrode composite /W/Au he 10-3Ω2;
3) Loaʻa iā SiC ka ʻoki ʻana i ke kapa kiʻekiʻe, a ʻo ka paʻakikī o SiC ka lua wale nō i ka daimana, kahi e hoʻokau ai i nā koi kiʻekiʻe no ka ʻoki ʻana, ka wili ʻana, ka poli ʻana a me nā ʻenehana ʻē aʻe.

Eia kekahi, ʻoi aku ka paʻakikī o ka hana ʻana i nā mea hana mana silicon carbide trench. Wahi a nā ʻano hana like ʻole, hiki ke hoʻokaʻawale nui ʻia nā mea hana mana silicon carbide i nā mea hana planar a me nā mea hana trench. Loaʻa i nā mea hana mana silicon carbide planar ke kūlike maikaʻi o ka ʻāpana a me ke kaʻina hana maʻalahi, akā ua maʻalahi i ka hopena JFET a he kiʻekiʻe ka capacitance parasitic a me ke kū'ē ʻana ma ke kūlana. Ke hoʻohālikelike ʻia me nā mea hana planar, ʻoi aku ka haʻahaʻa o ke kūlike ʻāpana o nā mea hana mana silicon carbide trench a he ʻoi aku ka paʻakikī o ke kaʻina hana. Eia nō naʻe, kūpono ke ʻano trench i ka hoʻonui ʻana i ka nui o ka ʻāpana o ka mea hana a ʻoi aku ka liʻiliʻi o ka hana ʻana i ka hopena JFET, he mea maikaʻi ia no ka hoʻoponopono ʻana i ka pilikia o ka neʻe ʻana o ke kahawai. Loaʻa iā ia nā waiwai maikaʻi loa e like me ka liʻiliʻi o ke kū'ē ʻana, ka capacitance parasitic liʻiliʻi, a me ka hoʻohana ʻana i ka ikehu hoʻololi haʻahaʻa. Loaʻa iā ia nā pono kumukūʻai a me ka hana a ua lilo ia i kuhikuhi nui o ka hoʻomohala ʻana i nā mea hana mana silicon carbide. Wahi a ka pūnaewele mana o Rohm, ʻo ka ʻano ROHM Gen3 (Gen1 Trench structure) he 75% wale nō o ka ʻāpana chip Gen2 (Plannar2), a ua hoʻemi ʻia ke kū'ē ʻana o ka ʻano ROHM Gen3 e 50% ma lalo o ka nui o ka chip like.

ʻO ke kumu kūʻai o ka silikona carbide, epitaxy, front-end, nā lilo R&D a me nā mea ʻē aʻe he 47%, 23%, 19%, 6% a me 5% o ke kumukūʻai hana ʻana o nā mea silicon carbide.

ʻO ka mea hope loa, e kālele mākou i ka uhaki ʻana i nā pale loea o nā substrates i loko o ke kaulahao ʻoihana silicon carbide.

Ua like ke kaʻina hana o nā substrates silicon carbide me nā substrates i hoʻokumu ʻia i ka silicon, akā ʻoi aku ka paʻakikī.
ʻO ke kaʻina hana hana o ka substrate silicon carbide e pili ana i ka synthesis o nā mea maka, ka ulu ʻana o ke kristal, ka hana ʻana i ka ingot, ka ʻoki ʻana i ka ingot, ka wili wafer, ka polishing, ka hoʻomaʻemaʻe a me nā loulou ʻē aʻe.
ʻO ke kahua ulu kristal ke kikowaena o ke kaʻina holoʻokoʻa, a ʻo kēia kaʻina e hoʻoholo ai i nā waiwai uila o ka substrate silicon carbide.

He paʻakikī ke ulu ʻana o nā mea silicone carbide i loko o ka pae wai ma lalo o nā kūlana maʻamau. ʻO ke ʻano ulu ʻana o ka pae mahu i kaulana i ka mākeke i kēia lā he mahana ulu ma luna o 2300°C a koi pono i ka kaohi pololei o ka mahana ulu. Aneane paʻakikī ke nānā ʻana i ke kaʻina hana holoʻokoʻa. ʻO kahi hewa iki e alakaʻi ai i ka ʻōpala huahana. I ka hoʻohālikelike ʻana, pono wale nā ​​​​mea silicon i 1600℃, ʻoi aku ka haʻahaʻa. Ke kū nei hoʻi ka hoʻomākaukau ʻana i nā substrates silicon carbide i nā pilikia e like me ka ulu lohi o ka kristal a me nā koi ʻano kristal kiʻekiʻe. ʻO ka ulu ʻana o ka wafer silicone carbide ma kahi o 7 a 10 mau lā, ʻoiai ʻo ka huki ʻana o ke koʻokoʻo silicon he 2 a me ka hapa lā wale nō. Eia kekahi, ʻo ka silicon carbide kahi mea nona ka paʻakikī ʻo ia ka lua ma mua o ke daimana. E nalowale nui ia i ka wā e ʻoki ana, wili, a me ka poli ʻana, a ʻo ka lakio hoʻopuka he 60% wale nō.

Ua ʻike mākou ʻo ke ʻano o ka hoʻonui ʻana i ka nui o nā substrates silicon carbide, me ka hoʻomau ʻana o ka nui e piʻi aʻe ana, ke piʻi nei nā koi no ka ʻenehana hoʻonui diameter. Pono ia i ka hui pū ʻana o nā mea hoʻokele loea like ʻole e hoʻokō ai i ka ulu iterative o nā kristal.