Nā ʻāpana i uhi ʻia me CVD SiC no Silicon Epitaxy (Si Epi)

Hana ʻia me ka pololei no nā ʻōnaehana hoʻokaʻawale Silicon Epitaxial wafer hoʻokahi a me ka batch, hāʻawi kā mākou mau susceptors i uhi ʻia me CVD SiC, nā disks satellite, a me nā ʻāpana kahua thermal i ka like ʻana o ka thermal a me ka ʻole o ka outgassing. Hoʻopuni piha ka papa uhi β-SiC cubic kiʻekiʻe i ka substrate graphite maʻemaʻe kiʻekiʻe, e pale ana i ka reactive gas etching (SiH₄, SiH₂Cl₂, HCl) a me ka hōʻoiaʻiʻo ʻana i nā pae haumia metala haʻahaʻa loa (< 5 ppm) i ka wā o ka hana ʻana i ka Si Epi wela kiʻekiʻe (1000°C - 1200°C).