CVD SiC Txheej yog dab tsi?

CVDSiC txheejyog reshaping cov kev txwv ntawm semiconductor manufacturing txheej txheem ntawm ib tug astonishing tus nqi. Qhov zoo li yooj yim txheej tshuab no tau dhau los ua qhov kev daws teeb meem tseem ceeb rau peb qhov teeb meem tseem ceeb ntawm kev sib kis kab mob, kev kub siab corrosion thiab plasma erosion hauv chip manufacturing. Lub ntiaj teb cov khoom siv semiconductor saum toj kawg nkaus tau teev nws raws li cov txheej txheem thev naus laus zis rau cov cuab yeej txuas ntxiv mus. Yog li, dab tsi ua rau qhov txheej txheem no "tsis pom armor" ntawm chip manufacturing? Tsab ntawv xov xwm no yuav tshawb xyuas nws cov ntsiab lus thev naus laus zis, cov ntawv thov tseem ceeb thiab cov kev sib tw ua tiav.

Ⅰ. Lub ntsiab lus ntawm CVD SiC txheej

CVD SiC txheej yog hais txog txheej tiv thaiv ntawm silicon carbide (SiC) tso rau ntawm lub substrate los ntawm cov txheej txheem tshuaj vapor deposition (CVD). Silicon carbide yog ib qho sib xyaw ntawm silicon thiab carbon, paub txog nws qhov zoo heev hardness, siab thermal conductivity, tshuaj inertness thiab kub tsis kam. CVD thev naus laus zis tuaj yeem tsim kom muaj lub siab dawb huv, ntom ntom ntom ntom ntom ntom SiC txheej, thiab tuaj yeem ua tau raws li qhov nyuaj geometries. Qhov no ua rau CVD SiC txheej zoo heev rau kev thov cov ntawv thov uas tsis tuaj yeem ntsib los ntawm cov khoom siv ib txwm muaj lossis lwm txoj hauv kev txheej txheej.

Ⅱ. CVD txheej txheem txheej txheem

Chemical vapor deposition (CVD) yog ntau yam kev tsim khoom siv los tsim cov khoom zoo, ua haujlwm zoo. Lub hauv paus ntsiab lus tseem ceeb ntawm CVD suav nrog cov tshuaj tiv thaiv ntawm gaseous precursors nyob rau saum npoo ntawm lub rhuab substrate los tsim ib txheej txheej.

Ntawm no yog ib qho yooj yim tawg ntawm SiC CVD txheej txheem:

CVD txheej txheem txoj cai daim duab

1. Precursor qhia: Gaseous precursors, feem ntau silicon-muaj gases (xws li, methyltrichlorosilane - MTS, los yog silane - SiH₄) thiab carbon-muaj gases (xws li, propane - C₃H₈), yog nkag mus rau hauv cov tshuaj tiv thaiv chamber.

2. Gas xa khoom: Cov pa roj carbon monoxide no ntws dhau ntawm cov cua sov substrate.

3. Adsorption: Precursor molecules adsorb rau saum npoo ntawm kub substrate.

4. Cov tshuaj tiv thaiv nto: Thaum qhov kub thiab txias, cov adsorbed molecules raug tshuaj lom neeg cov tshuaj tiv thaiv, ua rau decomposition ntawm precursor thiab tsim cov khoom SiC zaj duab xis. Byproducts raug tso tawm nyob rau hauv daim ntawv ntawm gases.

5. Desorption thiab tso pa tawm: Gaseous byproducts desorb los ntawm qhov chaw thiab ces tso tawm los ntawm lub chamber. Kev tswj xyuas qhov kub thiab txias, siab, roj ntws tus nqi thiab precursor concentration yog qhov tseem ceeb rau kev ua tiav cov yeeb yaj kiab uas xav tau, suav nrog thickness, purity, crystallinity thiab adhesion.

Ⅲ. Kev siv CVD SiC txheej hauv cov txheej txheem semiconductor

CVD SiC coatings yog qhov tseem ceeb hauv kev tsim khoom semiconductor vim tias lawv cov khoom sib xyaw ua ke ncaj qha ua tau raws li cov xwm txheej huab cua thiab nruj purity yuav tsum tau ntawm cov chaw tsim khoom. Lawv txhim khu kev tiv thaiv rau cov ntshav plasma corrosion, tshuaj tua kab mob, thiab particle tiam, tag nrho cov tseem ceeb heev rau maximizing wafer tawm los thiab khoom uptime.

Cov hauv qab no yog qee yam CVD SiC coated qhov chaw thiab lawv daim ntawv thov scenarios:

1. Plasma Etching Chamber thiab Focus Ring

Cov khoomCVD SiC coated liners, da dej hau, susceptors, thiab tsom rings.

Daim ntawv thov: Hauv plasma etching, plasma muaj zog heev yog siv los xaiv tshem tawm cov ntaub ntawv los ntawm wafers. Cov ntaub ntawv tsis muaj coated los yog tsawg dua cov ntaub ntawv uas tsis tshua muaj zog degrade sai, uas ua rau cov kab mob sib kis thiab nquag downtime. CVD SiC coatings muaj kev tiv thaiv zoo heev rau cov tshuaj plasma hnyav (xws li fluorine, chlorine, bromine plasmas), txuas lub neej ntawm cov khoom tseem ceeb hauv chav, thiab txo cov khoom tsim, uas ncaj qha nce wafer yield.

2.PECVD thiab HDPCVD chav

Cov khoomCVD SiC coated cov tshuaj tiv thaiv chambers thiab electrodes.

Daim ntawv thov: Plasma enhanced chemical vapor deposition (PECVD) thiab high density plasma CVD (HDPCVD) yog siv los tso cov yeeb yaj kiab nyias (piv txwv li, dielectric txheej, passivation txheej). Cov txheej txheem no tseem cuam tshuam nrog hnyav plasma ib puag ncig. CVD SiC coatings tiv thaiv cov phab ntsa ntawm phab ntsa thiab electrodes los ntawm kev yaig, ua kom cov yeeb yaj kiab zoo ib yam thiab txo qhov tsis xws luag.

3. Ion implantation khoom siv

Cov khoom: CVD SiC coated beamline Cheebtsam (piv txwv li, apertures, Faraday khob).

Daim ntawv thov: Ion implantation qhia dopant ions rau hauv semiconductor substrates. High-zog ion beams tuaj yeem ua rau sputtering thiab yaig ntawm cov khoom raug. Lub hardness thiab siab purity ntawm CVD SiC txo particle tiam los ntawm beamline Cheebtsam, tiv thaiv kev kis kab mob ntawm wafers thaum lub sij hawm tseem ceeb doping kauj ruam.

4. Epitaxial reactor Cheebtsam

Cov khoom: CVD SiC coated susceptors thiab gas distributors.

Daim ntawv thov: Kev loj hlob ntawm Epitaxial (EPI) cuam tshuam nrog kev loj hlob ntawm cov txheej txheem crystalline ntawm lub substrate ntawm qhov kub thiab txias. CVD SiC coated susceptors muaj kev ruaj ntseg zoo heev thiab tshuaj lom neeg inertness ntawm qhov kub thiab txias, ua kom cov cua sov tsis sib xws thiab tiv thaiv kev sib kis ntawm cov susceptor nws tus kheej, uas yog qhov tseem ceeb rau kev ua tiav cov txheej txheem zoo epitaxial.

Raws li nti geometries shrinkage thiab cov txheej txheem xav tau hnyav, qhov kev thov rau cov khoom zoo CVD SiC txheej thiab CVD txheej manufacturers tseem loj hlob.

IV. Dab tsi yog cov teeb meem ntawm CVD SiC txheej txheej?

Txawm hais tias muaj txiaj ntsig zoo ntawm CVD SiC txheej, nws cov khoom tsim thiab daim ntawv thov tseem ntsib qee cov txheej txheem nyuaj. Kev daws cov teeb meem no yog tus yuam sij kom ua tiav kev ua haujlwm ruaj khov thiab kev siv nyiaj tau zoo.

Kev sib tw:

1. Adhesion rau substrate

SiC tuaj yeem nyuaj kom ua tiav qhov muaj zog thiab zoo ib yam adhesion rau ntau yam khoom siv substrate (xws li graphite, silicon, ceramic) vim qhov sib txawv ntawm thermal expansion coefficients thiab lub zog saum npoo. Cov adhesion tsis zoo tuaj yeem ua rau delamination thaum lub sij hawm thermal cycling lossis mechanical stress.

Kev daws:

Kev npaj nto: Kev tu kom zoo thiab kev kho deg (xws li, etching, plasma kho) ntawm lub substrate kom tshem tawm cov kab mob thiab tsim kom muaj qhov chaw zoo rau kev sib txuas.

Interlayer: Muab cov txheej nyias nyias thiab ua kom haum raws li cov txheej txheem tsis sib xws (xws li, pyrolytic carbon, TaC - zoo ib yam li CVD TaC txheej hauv cov ntawv thov tshwj xeeb) txhawm rau txo cov thermal expansion mismatch thiab txhawb kev adhesion.

Optimize deposition tsis: Ua tib zoo tswj qhov kub thiab txias, siab, thiab roj sib piv kom ua kom zoo tshaj qhov nucleation thiab kev loj hlob ntawm SiC cov yeeb yaj kiab thiab txhawb kev sib raug zoo ntawm kev sib raug zoo.

2. Zaj duab xis kev nyuaj siab thiab tawg

Thaum lub sij hawm tso dej los yog txias tom qab, qhov kev ntxhov siab nyob hauv yuav tshwm sim hauv SiC zaj duab xis, ua rau tawg lossis tawg, tshwj xeeb tshaj yog nyob rau hauv cov duab loj lossis cov duab.

Kev daws:

Kev Tswj Kub Kub: Precisely tswj cov cua sov thiab cua txias kom txo thermal shock thiab kev ntxhov siab.

Gradient Txheej: Siv cov txheej txheem txheej txheej los yog txheej txheej txheej kom maj mam hloov cov khoom sib xyaw lossis cov qauv kom haum rau kev ntxhov siab.

Post-Deposition Annealing: Anneal lub coated qhov chaw kom tshem tawm cov residual kev nyuaj siab thiab txhim kho zaj duab xis kev ncaj ncees.

3. Conformality thiab Uniformity ntawm Complex Geometry

Depositing uniformly tuab thiab conformal coatings rau qhov chaw nrog complex duab, siab nam piv, los yog sab hauv raws yuav nyuaj vim muaj kev txwv nyob rau hauv precursor diffusion thiab cov tshuaj tiv thaiv kinetics.

Kev daws:

Reactor Design Optimization: Tsim CVD reactors nrog optimized gas flow dynamics thiab kub uniformity los xyuas kom meej uniform faib ntawm precursors.

Txheej txheem Parameter hloov: Fine-tune deposition siab, txaus tus nqi, thiab precursor concentration los txhim kho roj theem diffusion mus rau complex nta.

Multi-theem deposition: Siv cov kauj ruam txuas ntxiv mus lossis kev sib hloov kho kom ntseeg tau tias txhua qhov chaw yog coated txaus.

V. FAQ

Q1: Dab tsi yog qhov sib txawv ntawm CVD SiC thiab PVD SiC hauv kev siv semiconductor?

A: CVD txheej yog columnar siv lead ua qauv nrog purity ntawm> 99.99%, haum rau plasma ib puag ncig; PVD coatings feem ntau yog amorphous / nanocrystalline nrog purity ntawm <99.9%, feem ntau yog siv rau cov hniav txheej.

Q2: Qhov kub siab tshaj plaws uas cov txheej tuaj yeem tiv taus yog dab tsi?

A: Lub sij hawm luv luv ntawm 1650 ° C (xws li cov txheej txheem annealing), kev siv sij hawm ntev ntawm 1450 ° C, dhau qhov kub ntawm qhov no yuav ua rau muaj kev hloov pauv ntawm β-SiC mus rau α-SiC.

Q3: Hom txheej thickness ntau npaum li cas?

A: Semiconductor Cheebtsam feem ntau yog 80-150μm, thiab dav hlau cav EBC txheej tuaj yeem ncav cuag 300-500μm.

Q4: Dab tsi yog qhov tseem ceeb cuam tshuam rau tus nqi?

A: Precursor purity (40%), khoom siv hluav taws xob (30%), yield poob (20%). Tus nqi ntawm cov txheej txheej high-end tuaj yeem ncav cuag $ 5,000 / kg.

Q5: Dab tsi yog cov khoom lag luam thoob ntiaj teb?

A: Tebchaws Europe thiab Tebchaws Meskas: CoorsTek, Mersen, Ionbond; Asia: Semixlab, Veteksemicon, Kallex (Taiwan), Scientech (Taiwan)