Cov Txheej Txheem CVD Siab Rau SiC Epitaxial Kev Loj Hlob

Tsim los rau cov txheej txheem khoom siv semiconductor muaj zog siab ua haujlwm nyob rau hauv kev ntxhov siab kub heev (1500 ° C - 1700 ° C), peb cov CVD SiC thiab TaC coated planetary susceptors, satellite disks, thiab gas deflectors tau tsim los kom zoo tshaj plaws. Tsim los tiv thaiv kev tsim cov khoom me me, kev puas tsuaj ntawm qhov chaw, thiab cov roj reactive etching (H₂, SiH₄, C₃H∯), peb cov txheej txheem siab heev ua kom ntseeg tau tias lub neej ua haujlwm ntev, kev tswj hwm dopant zoo dua, thiab kev sib npaug ntawm cov zaj duab xis tuab thoob plaws.6-nti thiab 8-nti SiC epitaxial wafers.