Cov Cheebtsam Txheej Txheem CVD SiC rau Silicon Epitaxy (Si Epi)
Ua kom raug rau cov txheej txheem tso cov khoom siv ib zaug thiab cov khoom siv Silicon Epitaxial, peb cov CVD SiC coated susceptors, satellite disks, thiab cov khoom siv thermal field muab cov thermal uniformity zoo heev thiab xoom outgassing. Cov txheej txheem txheej txheem cubic β-SiC siab-density encapsulates tag nrho cov graphite substrate siab-purity, tiv thaiv cov roj reactive etching (SiH₄, SiH₂Cl₂, HCl) thiab lav qhov tsis muaj hlau tsis huv ultra-low (< 5 ppm) thaum lub sijhawm ua haujlwm Si Epi kub siab (1000 ° C - 1200 ° C).
Kev tswj hwm emissivity ua kom ntseeg tau tias qhov tuab ntawm zaj duab xis wafer ntug mus rau nruab nrab yog qhov sib xws.
Muab kev tiv thaiv zoo tiv thaiv cov tshuaj ntxuav chav tsev thiab cov cua sov.
Precision CNC machined kom haum rau cov cuab yeej Epi loj 200mm / 300mm ib leeg-wafer (Applied Materials, ASM).
| Kev Ntsuas Txuj Ci | Tus nqi ntawm cov lus qhia | Txoj Kev Ntsuas / Txheem |
|---|---|---|
| Cov Khoom Siv Txheej | CVD β-SiC (Cubic Theem) | Cov Qauv Crystalline Siab Ceev |
| Cov Khoom Siv Hauv Qab | Ultra-Pure Isostatic Graphite | Qhov Ceev: 1.82 - 1.88 g/cm³ |
| Kev Ntshiab Tshuaj | Tag Nrho Cov Khoom Tsis Huv < 5 ppm | GDMS Kuaj Lawm |
| Txheej Thickness | 80 μm - 150 μm | Kev sib npaug ≤ ± 5% |
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