CVDDahaarka SiCwaxay dib u qaabaynaysaa xadka hababka wax soo saarka semiconductor-ka heer la yaab leh. Tignoolajiyadan dahaarka u muuqata ee fudud waxay noqotay xal muhiim ah saddexda caqabadood ee udub-dhexaadka u ah wasakhowga walxaha, daxalka heerkulka sare iyo nabaad guurka balaasmaha ee soosaarka chip. Soo-saareyaasha qalabka semiconductor-ka ugu sarreeya adduunka ayaa ku taxay sida tignoolajiyada caadiga ah ee qalabka jiilka soo socda. Haddaba, maxaa daahan ka dhigaya "hubka aan la arki karin" ee soo saarista chip? Maqaalkani wuxuu si qoto dheer u falanqeyn doonaa mabaadi'da farsamada, codsiyada asaasiga ah iyo horumarrada goynta.
Ⅰ Qeexida dahaarka CVD SiC
Daahan CVD SiC waxa loola jeedaa lakabka difaaca ee silikoon carbide (SiC) oo lagu shubay substrate iyadoo la raacayo habka uumiga kiimikada (CVD). Silicon carbide waa isku-darka silikoon iyo kaarboon, oo caan ku ah engegnaantiisa aadka u wanaagsan, kulaylka kuleylka sarreeya, firfircoonaanta kiimikada iyo iska caabinta heerkulka sare. Tignoolajiyada CVD waxay samayn kartaa lakabka SiC oo nadiif ah, cufan iyo labis ah, waxayna noqon kartaa mid aad ula jaan qaada joomatariyada adag. Tani waxay ka dhigaysaa dahaarka CVD SiC mid aad ugu habboon codsiyada dalbanaya ee aan lagu dabooli karin alaabada dhaqameed ama hababka kale ee daahan.
Ⅱ Habka CVD
Kaydinta uumiga kiimikada (CVD) waa hab wax soo saar badan oo loo isticmaalo in lagu soo saaro agab adag oo tayo sare leh oo tayo sare leh. Mabda'a asaasiga ah ee CVD waxay ku lug leedahay falcelinta horudhacyada gaaska ee dusha sare ee substrate kuleyl si loo sameeyo dahaar adag.
Halkan waxaa ah kala-bax la fududeeyay ee habka SiC CVD:
jaantuska nidaamka CVD
1. Hordhac horudhac ahGaasaska horudhaca ah, sida caadiga ah gaasaska silikoon ka kooban (tusaale, methyltrichlorosilane - MTS, ama silane - SiH₄) iyo gaasaska kaarboon-ka kooban (tusaale, propane - C₃H₈), ayaa lagu soo geliyaa qolka falcelinta.
2. Gaadhida gaaska: Gaasaskan horudhaca ah ayaa ku dul qulqula substrate-ka kulul.
3. Adsorption: Unugyada horudhaca ah waxay ku dhegaan dusha sare ee substrate-ka kulul.
4. falcelinta dusha sare: Heerkulka sare, molecules-ka la isku dhejiyay waxay ku dhacaan fal-celin kiimiko ah, taasoo keentay burburka horudhaca iyo sameynta filim adag oo SiC ah. Alaabooyinka ka soo baxa waxaa lagu sii daayaa qaab gaas ah.
5. Qulqulka iyo qiiqaWaxyaalaha gaasta leh ayaa ka soo baxa dusha sare ka dibna daal ka soo baxa qolka. Xakamaynta saxda ah ee heerkulka, cadaadiska, heerka socodka gaaska iyo feejignaanta horudhaca ayaa muhiim u ah gaaritaanka sifooyinka filimka la rabo, oo ay ku jiraan dhumucda, nadiifnimada, crystallinity iyo adhesion.
Ⅲ Isticmaalka Dahaarka CVD SiC ee Geedi socodka Semiconductor
Dahaarka CVD SiC waa lagama maarmaanka wax soo saarka semiconductor sababtoo ah isku darka gaarka ah ee guryaha waxay si toos ah ula kulmaan shuruudaha aadka u daran iyo shuruudaha nadiifinta adag ee deegaanka wax soo saarka. Waxay xoojiyaan iska caabbinta daxalka balasmaha, weerarka kiimikaad, iyo jiilka walxaha, kuwaas oo dhamaantood muhiim u ah kordhinta wax-soo-saarka wafer-ka iyo waqtiga qalabka.
Kuwa soo socda ayaa ah qaybo ka mid ah CVD SiC-da ee caanka ah iyo xaaladaha codsigooda:
1. Plasma Etching Chamber iyo Focus ringing
Alaabta: CVD SiC dahaarka dahaarka leh, madaxa qubeyska, susceptors, iyo giraanta diirada.
Codsiga: Plasma etching, balaasmaha aadka u firfircoon ayaa loo isticmaalaa in si door ah looga saaro walxaha maraqyada. Walxaha aan dahaarka lahayn ama ka yar ee raagaya ayaa si degdeg ah u hoos u dhiga, taas oo keenta wasakhowga walxaha iyo waqti-dhimis joogto ah. Dahaarka CVD SiC waxay leeyihiin iska caabin heer sare ah oo ku saabsan kiimikooyinka balaasmaha gardarrada ah (tusaale, fluorine, chlorine, plasmas bromine), waxay kordhiyaan nolosha qaybaha qolka muhiimka ah, waxayna yareeyaan soosaarka walxaha, kaas oo si toos ah u kordhiya dhalidda wafer.
2.PECVD iyo qolalka HDPCVD
AlaabtaQolalka falcelinta dahaarka leh ee CVD SiC iyo korantado
CodsiyadaDhigista uumiga kiimikada ee la xoojiyay (PECVD) iyo plazma cufnaanta sare CVD (HDPCVD) ayaa loo isticmaalaa in lagu kaydiyo aflaanta khafiifka ah (tusaale, lakabyada dielectric, lakabyada passivation). Nidaamyadani waxay sidoo kale ku lug leeyihiin bay'ada balaasmaha adag. Dahaarka CVD SiC waxay ka ilaaliyaan derbiyada qolka iyo korantada nabaadguurka, hubinta tayada filimka joogtada ah iyo yaraynta cilladaha.
3. Qalabka la geliyo ion
Alaabta: CVD SiC ee dahaarka leh qaybaha beamline (tusaale, daloolo, koobabka Faraday).
Codsiyada: Ion implantation wuxuu soo bandhigayaa ion dopant substrates semiconductor. Alwaaxyada tamarta sare leh ee ion waxay sababi karaan xaaqid iyo nabaad-guurka qaybaha bannaan. Adkeysiga iyo nadiifnimada sare ee CVD SiC waxay yaraynaysaa jiilka qayb ka mid ah qaybaha beamline, ka hortagga wasakhaynta maraqyada inta lagu jiro tallaabadan doping ee muhiimka ah.
4. Qaybaha reactor Epitaxial
AlaabtaCVD SiC dahaarka dahaaran iyo qaybiyeyaasha gaaska.
CodsiyadaKoritaanka Epitaxial (EPI) waxay ku lug leedahay koritaanka lakabyada crystalline ee aadka loo dalbaday ee substrate ee heerkul sare. CVD SiC dahaadhiyeyaasha dahaarka leh waxay bixiyaan degenaansho kulayl aad u fiican iyo qallafsanaan kiimikaad heerkul sare, hubinta kulaylinta isku midka ah iyo ka hortagga faddaraynta suulaha laftiisa, taas oo muhiim u ah helitaanka lakabyo epitaxial tayo sare leh.
Sida geometries-jiifku hoos u dhaco oo dalabaadka geeddi-socodku sii kordhayaan, baahida loo qabo alaab-qeybiyeyaasha CVD SiC ee tayada sare leh iyo soosaarayaasha daahan CVD ayaa sii kordhaya.
IV. Waa maxay caqabadaha habka dahaarka CVD SiC?
In kasta oo ay jiraan faa'iidooyinka waaweyn ee daahan CVD SiC, wax-soo-saarkeeda iyo codsigeeda ayaa wali la kulma caqabado geeddi-socod ah. Xallinta caqabadahan ayaa fure u ah in la gaaro waxqabad xasilloon iyo wax-ku-oolnimo.
Caqabadaha:
1. Ku dheggan substrate
SiC waxay noqon kartaa mid adag si loo gaaro ku-dhejin adag oo isku mid ah agabyada kala duwan ee substrate (tusaale, graphite, silicon, ceramic) sababtoo ah kala duwanaanshiyaha is-ballaadhinta kulaylka iyo tamarta dusha sare. Ku dheggan liidata waxay u horseedi kartaa delamination inta lagu jiro baaskiil kulaylka ama walbahaarka farsamada.
Xalka:
Diyaarinta dusha sareNadiifinta aadka u wanaagsan iyo daawaynta dusha sare (tusaale, etching, plasma treatment) ee substrate si meesha looga saaro wasakhaynta loona abuuro dusha ugu fiican ee isku xidhka
InterlayerDhig lakab khafiif ah oo la habeeyey ama lakabka kaydinta (tusaale, kaarboon pyrolytic, TaC - oo la mid ah daahan CVD TaC ee codsiyada gaarka ah) si loo yareeyo is-waafajinta fidinta kulaylka iyo kor u qaadida adhesion.
Wanaaji halbeegyada dhigaalka: Si taxadar leh u xakamee heerkulka dhigaalka, cadaadiska, iyo saamiga gaaska si loo wanaajiyo nukleation-ka iyo korriinka filimada SiC iyo kor u qaadida isku xirnaanta adag ee wejiga.
2. Cadaadiska filimka iyo dildilaaca
Inta lagu jiro meel dhigista ama qaboojinta ku xigta, culaysyada haraaga ah ayaa laga yaabaa inay ka dhex abuurmaan filimada SiC, taasoo keenta dildilaac ama gariir, gaar ahaan joomateriyada waaweyn ama adag.
Xalka:
Xakamaynta heerkulka: Si sax ah u xakamee kulaylinta iyo qaboojinta heerarka si aad u yarayso shoogga kulaylka iyo walbahaarka.
Dahaarka GradientIsticmaal hababka dahaadhida lakabka badan ama gradient si aad si tartiib tartiib ah u bedesho walxaha ama qaab-dhismeedka si aad u daboosho walaaca.
Dib-u-dhigista ka dib: Masaar qaybaha dahaarka leh si aad u baabi'iso walbahaarka haraaga oo aad u wanaajiso daacadnimada filimka.
3. Is-waafajinta iyo Midnimada Geometries-ka Kakan
Dhigista dahaar isku mid ah oo dhumuc weyn leh oo la jaan qaadaya qaybo leh qaabab adag, saamiyo dhinaca sare ah, ama kanaalada gudaha way adkaan kartaa sababtoo ah xaddidnaanta faafinta hore iyo dhaqdhaqaaqa falcelinta.
Xalka:
Hagaajinta Nakhshad ReactorNaqshada reactors CVD oo leh dhaqdhaqaaqa socodka gaaska la hagaajiyay iyo lebbiska heerkulka si loo hubiyo qaybinta isku midka ah ee horgayayaasha.
Hagaajinta Halbeegga Habraaca: Cadaadiska meelaynta si fiican u hagaajin, heerka socodka, iyo feejignaanta horudhaca ah si kor loogu qaado faafinta wajiga gaaska ee sifooyinka adag.
Dhigista marxalado badanIsticmaal talaabooyinka dhigista joogtada ah ama qalabka wareega si aad u hubiso in dhammaan sagxadaha si fiican loo dahaadhay.
V. FAQ
Q1: Waa maxay farqiga u dhexeeya CVD SiC iyo PVD SiC ee codsiyada semiconductor?
A: Dahaarka CVD waa qaabab crystal columnar oo nadiif ah> 99.99%, ku haboon bey'ada balasmaha; Dahaarka PVD inta badan waa amorphous/nanocrystalline oo leh nadiif ah <99.9%, inta badan loo isticmaalo daahaarka qurxinta.
Q2: Waa maxay heerkulka ugu sarreeya ee daahanku u adkeysan karo?
A: U-dulqaadashada muddada-gaaban ee 1650 ° C (sida habka nuugista), xaddidaadda isticmaalka muddada-dheer ee 1450 ° C, ka badan heerkulkan waxay sababi doontaa marxaladda kala-guurka ee β-SiC ilaa α-SiC.
Q3: Qiyaasta dhumucda dahaarka caadiga ah?
A: Qaybaha semiconductor inta badan waa 80-150μm, iyo daahan engine diyaarad EBC gaari karaan 300-500μm.
Q4: Maxay yihiin arrimaha muhiimka ah ee saameeya kharashka?
J: Nadiifinta hore (40%), isticmaalka tamarta qalabka (30%), khasaaraha soosaarka (20%). Qiimaha halbeegga dahaarka sare wuxuu gaari karaa $5,000/kg.
Q5: Maxay yihiin alaab-qeybiyeyaasha adduunka ugu waaweyn?
A: Yurub iyo Maraykanka: CoorsTek, Mersen, Ionbond; Aasiya: Semixlab, Veteksemicon, Kalex (Taiwan), Saynis (Taiwan)
Waqtiga boostada: Jun-09-2025