Qaybaha Epitaxial-ka

Qaybaha Dahaarka leh ee CVD SiC ee loogu talagalay Silicon Epitaxy (Si Epi)

Nidaamyada kaydinta ee Silicon Epitaxial ee hal-wafer iyo dufcaddii, walxaha difaaca ee CVD SiC ee dahaarka leh, saxannada dayax-gacmeedka, iyo qaybaha goobta kulaylka ayaa bixiya isku-mid ahaanshaha kulaylka oo heer sare ah iyo gaaska oo aan la saarin. Lakabka dahaarka ee cufnaanta sare leh ee β-SiC wuxuu si buuxda u daboolayaa substrate-ka graphite ee saafiga sare leh, isagoo ka hortagaya qallajinta gaaska falcelinta leh (SiH₄, SiH₂Cl₂, HCl) wuxuuna dammaanad qaadayaa heerarka wasakhda birta ee aadka u hooseeya (< 5 ppm) inta lagu jiro habaynta heerkulka sare ee Si Epi (1000°C - 1200°C).

Midaynta Goobta Kulaylka

Iftiinka la xakameeyey wuxuu hubiyaa isku dheelitirnaanta saxda ah ee dhumucda filimka gees ilaa dhexe.

Iska caabbinta Etch-ka HCl

Waxay bixisaa ilaalin adag oo ka dhan ah kiimikooyinka nadiifinta qolka dhexdiisa iyo shoogga kulaylka.

U hoggaansanaanta Nidaamka OEM

CNC sax ah oo lagu farsameeyay si loogu rakibo qalabka Epi ee hal-wafer ah ee 200mm/300mm (Qalabka la Isticmaalay, ASM).

Halbeegga Farsamada	Qiimaha Tilmaamaha	Habka Caadiga ah / Tijaabada
Qalabka dahaadhka	CVD β-SiC (Marxalad Cubic ah)	Qaab-dhismeedka Crystalline-ka Cufnaanta Sare leh
Qalabka Substrate-ka	Graphite Isostatic ah oo aad u saafi ah	Cufnaanta: 1.82 - 1.88 g/cm³
Nadiifnimada Kiimikada	Wasakhda Guud < 5 ppm	GDMS la Tijaabiyay
Dhumucda dahaarka	80 μm - 150 μm	Midaysanaan ≤ ±5%