Qaybaha Epitaxial-ka ee SiC

Dahaarka CVD ee Horumarsan ee Kobaca Epitaxial ee SiC

Waxaa loogu talagalay hababka qalabka semiconductor-ka awoodda sare leh ee ka shaqeeya cadaadiska kulaylka aadka u daran (1500°C - 1700°C), suuxiyeyaasha meeraha ee dahaaran ee CVD SiC iyo TaC, saxannada dayax-gacmeedka, iyo kuwa gaaska ka leefiya ayaa loo sameeyay si ay u fiicnaadaan. Waxaa loogu talagalay in looga hortago soo saarista walxaha, burburka dusha sare, iyo qallajinta gaaska ee falcelinta leh (H₂, SiH₄, C₃H∯), dahaarkayaga horumarsan wuxuu hubiyaa cimri dheer oo hawlgal ah, xakamaynta dopant-ka oo sareysa, iyo isku-midnimada dhumucda filimka oo dhan.Waferro epitaxial ah oo 6-inji ah iyo 8-inji ah oo SiC ah.

Xasilloonida Heerkulka Aad u Sareysa

Heerkulka oo deggan ilaa 1700°C meelaha ay H₂/silane-ku yareeyaan.

Iswaafajinta CTE ee Gradient-ka

Waxay baabi'isaa dahaarka dildilaaca, micro-cracking, iyo splashing inta lagu jiro wareegyada kulaylka degdega ah.

Diyaargarowga Miisaanka Wafer ee 8-Inji ah

Mashiinka CNC ee saxda ah oo loogu talagalay fal-galayaasha SiC Epi ee jiilka xiga (LPE, Aixtron, Nuflare).

Halbeegga Farsamada	Qiimaha Tilmaamaha	Habka Caadiga ah / Tijaabada
Ikhtiyaarada Waxyaabaha Dahaadhka	CVD SiC / Tantalum Carbide (TaC)	Lakabka Hermetic-ka ee daahirnimada sare leh
Substrate-ka Salka ah	Graphite Isostatic ah oo la safeeyey	Nadaafad Badan < 5 ppm
Iska caabinta Shoogga Kulaylka	Heerka Ramp-ka Delta T > 500°C	Dildilaac/Fiiq la'aan
Qalafsanaanta Dusha Sare (Ra)	≤ 0.4 μm (Muraayad la safeeyey)	Waxay ka hortagtaa dhegdhegista Wafer iyo Walxaha