Tun lokacin da aka gano shi, silicon carbide ya ja hankalin jama'a. Silicon carbide ya ƙunshi rabin Si atom da rabin C, waɗanda aka haɗa su ta hanyar haɗin kai ta hanyar nau'ikan lantarki suna musayar sp3 hybrid orbitals. A cikin ainihin tsarin tsarin kristal guda ɗaya, ana tsara nau'ikan Si guda huɗu a cikin tsarin tetrahedral na yau da kullun, kuma C atom yana tsakiyar tetrahedron na yau da kullun. Sabanin haka, ana iya ɗaukar Si atom a matsayin tsakiyar tetrahedron, don haka ya zama SiC4 ko CSi4. Tsarin Tetrahedral. Haɗin haɗin gwiwa a cikin SiC yana da ionic sosai, kuma ƙarfin haɗin gwiwar silicon-carbon yana da girma sosai, kusan 4.47eV. Saboda ƙarancin ƙarancin kuzari, lu'ulu'u na siliki carbide cikin sauƙi suna samar da nau'ikan nau'ikan nau'ikan nau'ikan nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'i nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau’in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau’in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in iri daban-daban) cikin sauƙin samar da su yayin aiwatar da girma. Akwai manyan poleltupes sama da 200, wanda za'a iya kasu kashi uku cikin manyan Kategorien: Cubic, hexagonal da trigonal.
A halin yanzu, manyan hanyoyin haɓakar lu'ulu'u na SiC sun haɗa da Hanyar Jirgin Ruwa ta Jiki (Hanya PVT), Haɓaka Ruwan Kayan Wuta na Kimanta (HTCVD), Hanyar Tsarin Ruwa, da sauransu. ;
Hanyar da ake kira PVT tana nufin sanya lu'ulu'u na iri na SiC a saman crucible, da kuma sanya SiC foda a matsayin albarkatun kasa a kasa na crucible. A cikin rufaffiyar yanayin zafi mai zafi da ƙananan matsa lamba, SiC foda sublimates kuma yana motsawa sama a ƙarƙashin aikin gradient zafin jiki da bambancin maida hankali. Hanyar jigilar shi zuwa kusa da kristal iri sannan a sake yin recrystallizing bayan an kai ga yanayin da ya fi girma. Wannan hanyar za ta iya cimma ci gaban da za a iya sarrafawa na girman SiC crystal da takamaiman siffofin crystal. ;
Koyaya, yin amfani da hanyar PVT don haɓaka lu'ulu'u na SiC yana buƙatar koyaushe kiyaye yanayin haɓaka da ya dace yayin tsarin girma na dogon lokaci, in ba haka ba zai haifar da rikicewar lattice, don haka yana shafar ingancin crystal. Koyaya, an kammala haɓakar lu'ulu'u na SiC a cikin rufaffiyar sarari. Akwai ƴan ingantattun hanyoyin sa ido da sauye-sauye masu yawa, don haka sarrafa tsari yana da wahala.
A cikin aiwatar da haɓaka lu'ulu'u na SiC ta hanyar PVT, yanayin haɓakar matakan haɓaka (Mataki Flow Growth) ana ɗaukarsa shine babban tsarin ingantaccen ci gaban nau'in crystal guda ɗaya.
Ƙwayoyin Si atom da C za su fi son haɗi tare da atom ɗin kristal a wurin kink, inda za su lalata da girma, haifar da kowane mataki don gudana gaba a layi daya. Lokacin da nisa mataki a kan crystal surface nisa wuce watsa free hanya na adatoms, babban adadin adatoms iya agglomerate, da biyu-girma tsibirin-kamar girma yanayin kafa zai halakar da mataki kwarara girma yanayin, sakamakon a cikin asarar 4H crystal bayanin tsarin, haifar da Multiple lahani. Sabili da haka, daidaitawar sigogin tsari dole ne a sami nasarar sarrafa tsarin matakin matakin ƙasa, ta haka ne ke hana haɓakar lahani na polymorphic, cimma manufar samun nau'in kristal guda ɗaya, kuma a ƙarshe shirya lu'ulu'u masu inganci.
A matsayin farkon haɓakar hanyar haɓakar sic crystal, hanyar jigilar tururi ta zahiri a halin yanzu ita ce hanya mafi girma ta girma don haɓaka lu'ulu'u na SiC. Idan aka kwatanta da sauran hanyoyin, wannan hanya tana da ƙananan buƙatu don kayan haɓaka haɓaka, tsarin haɓaka mai sauƙi, mai ƙarfi mai ƙarfi, ingantaccen bincike na ci gaba, kuma ya riga ya sami aikace-aikacen masana'antu. Amfanin hanyar HTCVD shi ne cewa zai iya girma conductive (n, p) da kuma high-tsarki Semi-insulating wafers, kuma zai iya sarrafa doping maida hankali domin dako maida hankali a cikin wafer ne daidaitacce tsakanin 3 × 1013 ~ 5 × 1019 / cm3. Rashin lahani shine babban matakin fasaha da ƙarancin kasuwa. Yayin da fasahar ci gaban kristal SiC na ruwa-lokaci ke ci gaba da girma, zai nuna babban yuwuwar haɓaka masana'antar SiC gabaɗaya kuma wataƙila ya zama sabon ci gaba a ci gaban SiC crystal.
Lokacin aikawa: Afrilu-16-2024