Iterambere rya SiC silicon carbide single crystal

Kuva yavumburwa, karubide ya silikoni yakuruye abantu benshi. Karubide ya silikoni igizwe na atome ya Si kimwe cya kabiri na atome ya C kimwe cya kabiri, bihuzwa n'imigozi ya covalent binyuze mu ma elektroni ebyiri zisangiye orbitals za sp3 hybrid. Mu gice cy'ibanze cy'imiterere ya kristu imwe, atome enye za Si zitondetse mu miterere ya tetrahedral isanzwe, naho atome ya C iherereye hagati ya tetrahedron isanzwe. Ku rundi ruhande, atome ya Si ishobora no gufatwa nk'aho iri hagati ya tetrahedron, bityo igakora SiC4 cyangwa CSi4. Imiterere ya tetrahedral. Umugozi wa covalent muri SiC ni ionic cyane, kandi ingufu za silicon-carbon bond ni nyinshi cyane, hafi 4.47eV. Bitewe n'ingufu nke zo gukusanya, kristu za silikoni za silikoni zikora ubwoko butandukanye bwa polytype mu gihe cyo gukura. Hari polytype zirenga 200 zizwi, zishobora kugabanywamo ibice bitatu by'ingenzi: cubic, hexagonal na trigonal.

Kugeza ubu, uburyo bw'ingenzi bwo gukura bwa kristu za SiC burimo uburyo bwo gutwara umwuka ushyushye (uburyo bwa PVT), uburyo bwo gukwirakwiza umwuka ushyushye cyane (uburyo bwa HTCVD), uburyo bwa Liquid Phase, n'ibindi. Muri byo, uburyo bwa PVT bumaze igihe kandi bukwiriye cyane mu nganda.

Uburyo bwitwa PVT buvuga gushyira kristu z'imbuto za SiC hejuru y'icyuma gishyushya, no gushyira ifu ya SiC nk'ibikoresho fatizo munsi y'icyuma gishyushya. Mu gace gafunze k'ubushyuhe bwinshi n'umuvuduko muto, ifu ya SiC iramanuka ikazamuka munsi y'ubushyuhe n'itandukaniro ry'ubushyuhe. Uburyo bwo kuyitwara hafi y'icyuma gishyushya hanyuma ikayisubizamo nyuma yo kugera ku rugero rwo hejuru rwuzuye. Ubu buryo bushobora kugera ku gukura ku buryo bugenzurwa kw'ingano ya kristu ya SiC n'imiterere yihariye ya kristu.
Ariko, gukoresha uburyo bwa PVT mu gukura kristu za SiC bisaba guhora ukomeza gukura neza mu gihe kirekire, bitabaye ibyo bizatuma habaho ikibazo cy’imiterere y’urukiramende, bityo bikagira ingaruka ku bwiza bwa kristu. Ariko, gukura kwa kristu za SiC kurangirira ahantu hafunze. Hari uburyo buke bwo gukurikirana neza n’ibintu byinshi bitandukanye, bityo kugenzura ibikorwa biragoye.

Mu gihe cyo gukura kristu za SiC hakoreshejwe uburyo bwa PVT, uburyo bwo gukura kw'intambwe (Intambwe yo Gukura kw'Intambwe) bufatwa nk'uburyo bw'ingenzi bwo gukura guhamye kw'ishusho imwe ya kristu.
Atome za Si na atome za C zahinduwe zizahuza cyane na atome z’ubuso bwa kristu aho zihurira, aho zizakura, bigatuma buri ntambwe itera imbere icyarimwe. Iyo ubugari bw’intambwe ku buso bwa kristu burenze cyane inzira idakwirakwira ya adatome, umubare munini wa adatome ushobora kwibumbira hamwe, kandi uburyo bwo gukura nk’ubw’ikirwa bugizwe n’ibice bibiri buzasenya uburyo bwo gukura kw’intambwe, bigatera gutakaza amakuru y’imiterere ya kristu ya 4H, bigatera inenge nyinshi. Kubwibyo, guhindura ibipimo by’imikorere bigomba kugera ku kugenzura imiterere y’intambwe ku buso, bityo bigahagarika ikorwa ry’inenge za polymorphic, kugera ku ntego yo kubona ishusho imwe ya kristu, kandi amaherezo bigategura kristu nziza.

Nk'uburyo bwa mbere bwo gukuraho kristu ya SiC, uburyo bwo gutwara umwuka uturuka ku mwuka ni bwo buryo bukoreshwa cyane mu gukuraho kristu ya SiC. Ugereranyije n'ubundi buryo, ubu buryo bufite ibikoresho bike byo gukuraho, uburyo bworoshye bwo gukuraho, ubushobozi bwo kugenzura neza, ubushakashatsi bwimbitse, kandi bwamaze kugera ku bikorwa by'inganda. Akamaro k'uburyo bwa HTCVD ni uko bushobora gukura kristu zikoresha amashanyarazi (n, p) na kristu zikoresha ikoranabuhanga rya “high-purity semi-insulating wafers”, kandi bushobora kugenzura ingano y'ikoreshwa ry'imashini zikoresha ikoranabuhanga kugira ngo kristu zishobore guhindurwa hagati ya 3 × 1013 ~ 5 × 1019 / cm3. Imbogamizi ni urwego rwo hejuru rwa tekiniki n'isoko rito. Uko ikoranabuhanga ryo gukuraho kristu ya SiC mu gice cy'amazi rikomeza gukura, rizagaragaza ubushobozi bukomeye mu guteza imbere inganda zose za SiC mu gihe kizaza kandi rishobora kuba intambwe nshya mu iterambere rya kristu ya SiC.