Maganin Dumama Mai Tsabta Mai Kyau ga Semiconductor Epitaxy

A cikin hanyoyin semiconductor masu zafi kamar MOCVD (Ƙarfe-Organic Chemical Vapor Deposition) da kuma ci gaban epitaxial na SiC, sarrafa filin zafi kai tsaye yana ƙayyade daidaiton kauri na ajiyar fim, yawan shan doping, da kuma yawan wafer na ƙarshe. A matsayin babban ɓangaren filin zafi,Mai Tsarkakewa Mai Girman GraphiteDole ne ya yi aiki cikin kwanciyar hankali da ci gaba a ƙarƙashin yanayin zafi mai tsanani wanda ya wuce 1600°C a cikin yanayin iskar gas mai yawan lalata. Ta hanyar haɗar da ingantattun nazarin shari'o'in aikace-aikacen abokin ciniki tare da ilimin samfuri mai mahimmanci, wannan labarin yana ba da cikakken bincike game da fa'idodin fasaha, ƙirar tsari, da muhimmiyar rawar da masu dumama graphite masu tsabta ke takawa a cikin kera wafer na semiconductor.

Me Yasa Zabi Mai Tsabtace Graphite Mai Tsabta Don Tsarin MOCVD?

A cikin muhimman matakai kamar MOCVD da GaN/SiC epitaxy, har ma da ƙananan canjin zafin jiki (>2°C) na iya haifar da canje-canje a tsawon rai ko lahani na lu'ulu'u a cikin layin epitaxial. Yin amfani da babban ƙarfin lantarki na thermal (100-150 W/m·K) da ƙarancin ƙimar faɗaɗa zafi (CTE), kayan graphite masu tsabta suna gudanar da zafi cikin sauƙi da sauri a duk faɗin susceptor da wafer.

Daidaiton Filin Zafin Jiki da Kula da Yankuna da yawa

Don magance asarar hasken zafi a gefun ɗakin epitaxy, masu dumama graphite masu tsabta galibi suna haɗa da ƙirar sarrafa zafin jiki mai zaman kansa na yankuna da yawa. Ta hanyar daidaita yanayin juriya, injiniyoyi suna keɓance yankunan da'ira da juriyar lantarki bisa ga halayen asarar zafi na filin kwararar ɗakin. Wannan yana kiyaye bambancin filin zafin jiki a duk yankin girma na wafer a cikin ±1°C, yana tabbatar da daidaiton wutar lantarki a duk wafers akan faifai.

Kula da Abubuwan da ke cikin Toka da Tabbatar da Muhalli Mai Tsabta

Tsarin epitaxy na semiconductor yana da matuƙar tasiri ga ƙazanta na ƙarfe. Graphite na masana'antu na yau da kullun ya ƙunshi abubuwan ƙarfe kamar ƙarfe (Fe), nickel (Ni), da jan ƙarfe (Cu), waɗanda ke saurin wargazawa da yaɗuwa cikin layin epitaxial a yanayin zafi mai yawa, suna lalata ƙarfin lantarki na na'ura da motsi na mai ɗaukar kaya. Masu dumama graphite masu tsabta suna fuskantar ayyukan tsarkakewa na chlorine mai zafi mai zafi, suna rage jimlar abun ciki na toka zuwa ƙasa da 5 ppm (kuma ƙasa da 2 ppm don matakin semiconductor mai ƙarfi), suna hana gurɓatar wafers na epitaxial daga ƙazanta na filin zafi a tushen.

Abubuwan Dumama Graphite Masu Ci Gaba a Tsarin Wafer na Semiconductor

Abubuwan dumama semiconductor suna fuskantar saurin dumama da sanyaya daga zafin ɗaki zuwa dubban digiri na Celsius. Ba kamar wayoyin dumama ƙarfe ba (kamar tungsten ko molybdenum), waɗanda ke sake sake yin aiki, su zama masu rauni, ko kuma su faɗi a yanayin zafi mai yawa, graphite yana nuna wani abu na musamman na zahiri: ƙarfi yana ƙaruwa da zafin jiki.

Ƙarfin Inji a Babban Zafi da Juriyar Gajiya a Tsarin

Ƙarfin kayan graphite yana ƙaruwa yayin da zafin jiki ke ƙaruwa, yana kaiwa kololuwa tsakanin 2000°C da 2500°C. Wannan halayyar tana tabbatar da cewa masu dumama graphite ba sa fuskantar raguwar injina ko karyewar tsari a ƙarƙashin hasken zafi mai ƙarfi da kuma aikin zafin jiki mai yawa. Saboda haka, ana kiyaye kwanciyar hankali na juriyar lantarki a cikin tsawon zagayowar aiki, wanda ke rage lokacin da ba a shirya ba na gyara.

Tsarin Injin 3D Mai Daidaito da Tsarin Da'ira Mai Hadaka

Na'urorin sarrafa wutar lantarki na zamani suna buƙatar ƙananan tsare-tsare na sarari. Graphite mai tsabta yana da ƙwarewa sosai a cikin injina kuma ana iya sarrafa shi ta hanyar injin CNC mai inganci mai tsayi 5-axis zuwa cikin tsare-tsaren da'ira masu rikitarwa - kamar tsarin zare mai matakai uku, hanyoyin da aka naɗe na serpentine, da kuma da'irori masu zagaye biyu na helix. Waɗannan saitunan geometric masu inganci suna haɓaka yankin saman dumama a cikin sarari mai iyaka, suna cimma babban fitarwa mai yawa tare da ƙarancin tasirin inductance.

Muhimman Fa'idodin Aiki na Masu Zafi na Graphite Mai Rufi na SiC

Domin jure wa yanayi masu tsauri na aiki—kamar yanayin rage hydrogen mai zafi ko iskar gas mai ɗauke da chlorine/fluorine—zubar da wani Layer mai yawa na Silicon Carbide (CVD SiC Coating) a saman substrate mai tsarkin graphite ya zama mafita ta masana'antu.

Juriyar Haɓakar Hydrogen da Zubar da Ƙwayoyin Halitta Ba Tare Da Shi Ba

A lokacin SiC da Silicon epitaxy, yawan H mai yawa₂Iskar gas tana lalata graphite mara rufi sosai a yanayin zafi mai yawa (hasken hydrogen yana samar da iskar methane), yana sa saman graphite ya zama sako-sako, yana iya fashewa, kuma yana haifar da gurɓataccen barbashi. Rufin CVD SiC mai yawa yana rufe ƙananan ramuka 100% akan saman graphite, yana ware zaizayar iskar gas gaba ɗaya kuma yana ƙirƙirar yanayin aiki mai tsafta sosai ba tare da zubar da barbashi ba.

Dorewa a Kafofin Yaɗa Labarai Masu Tashin Hankali da Rage Kudin Mallaka (TCO)

A cikin yanayin amsawa wanda ya haɗa da iskar gas mai aiki sosai kamar HCl da NH₃Rufin CVD SiC yana nuna rashin ƙarfin sinadarai. Ba wai kawai yana kare substrate na graphite daga tsatsa ba, har ma yana ƙara zagayowar maye gurbin abubuwan dumama (yawanci yana ƙara tsawon rayuwar sabis da sama da 200%). Wannan yana rage yawan kuɗin mallakar masana'antar semiconductor (TCO) da kuma ƙimar da aka rage a kowace wafer.

Nazarin Shari'a: Magance Daidaito Tsakanin Zafi da Gurɓatar Barbashi a cikin SiC Epitaxy

Maki na Ciwon Abokin Ciniki:Shahararren masana'antar epitaxy na semiconductor na ƙarni na 3 a Jamus ya fuskanci matsaloli biyu masu mahimmanci yayin haɓakar epitaxial na SiC inci 6 (zafin aiki 1650°C, H)₂+ Yanayin TCS): Na farko, karkacewar kauri na Layer epitaxial a gefunan wafer ya kai har zuwa ±3.8%, wanda ya haifar da gazawar na'urar gefen. Na biyu, na'urar dumama graphite ta OEM ta asali ta nuna tsananin fashewar hydrogen a saman da kuma fashewa bayan awanni 120 kacal na amfani, wanda ya haifar da karuwar raguwar barbashi a cikin ɗakin amsawa - wanda ya wuce iyakar ƙarancin lahani da 3× a matsakaici.

Gano Makamashin VET & Maganin Musamman

Bayan an yi aikin, ƙungiyar injiniyan VET Energy ta yi kwaikwayon lantarki da ruwan da aka haɗa da na'urar dumama OEM ta asali. Binciken ya nuna rashin isasshen diyya ta wutar lantarki a gefuna da ƙananan ramuka/fashewar damuwa ta zafi a saman murfin SiC (kauri na murfin ya kasance 60μm kawai tare da raunin mannewa). A martanin da aka bayar, VET Energy ta samar da mafita ta injiniya mai niyya:

• Inganta Tsarin Filin Zafi:An aiwatar da tsarin sarrafa juriya mai zaman kansa mai yankuna 3, wanda ya rage sashin dumama na geometric da kashi 8% kusa da yankunan watsawa na gefen don haɓaka yawan wutar lantarki na gida.
• Ingantaccen Tsabtace Ƙasa:An zaɓi mai yawan yawan isotropic isostatic graphite tare da abun ciki na toka ƙasa da 2 ppm, wanda ya dace daidai da ma'aunin faɗaɗa zafi (CTE) tare da murfin SiC (CTE matching >98%).
• Haɓaka Tsarin CVD SiC:An yi amfani da ingantaccen tsarin ajiyar CVD, yana ƙara kauri na rufin SiC zuwa 150 ± 10 μm tare da tsarin hatsi mai yawa, wanda ba shi da ramuka wanda zai iya jure 1700°CH₂fitar da ruwa.

Sakamakon Aiwatarwa & Darajar Abokin Ciniki An Isa

Bayan kwanaki 30 a jere na tabbatar da layin samarwa, abokin ciniki ya ba da rahoton ingantattun ci gaba a aiki: daidaiton kauri na epitaxial mai cikakken wafer (gami da cire gefen 3mm) ya inganta sosai daga±3.8% zuwa ±0.8%; na'urar hita tana aiki akai-akai donsama da awanni 400ba tare da wani fashewa ko fashewar saman shafi ba; lahani na barbashi na ɗakin guda ɗaya (>0.5μm) sun kasancean rage da kashi 85%Wannan ya haifar da ƙarin kashi 12% na yawan amfanin guntu a kowace wafer da kuma rage farashin kula da kayan aiki na shekara-shekara da kimaninYuro 85,000.

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