Nazarin Shari'a: Abubuwan Graphite Masu Tsabta Masu Inci 32 don Filayen Zafin Monocrystalline a cikin Girman Silikon N-Nau'in

Nazarin Shari'a: Abubuwan Graphite Masu Tsabta Masu Inci 32 don Filayen Zafin Monocrystalline a cikin Girman Silikon N-Nau'in

Marubuci:Dr. Steven Qiu, Babban Injiniyan Kayan Aiki na Semiconductor & Daraktan Fasaha a VET Energy

An buga:Agusta 2026 | Rahoton Fasaha & Nazarin Injiniya

Takaitaccen Bayani na Babban Zartarwa & Bayanin Aiki

  • Masana'antu:Manufofin PV da Semiconductor na Rana na Silicon Wafer Manufacturing
  • Tsarin aiki:Czochralski (CZ) N-Nau'in (TOPCon/HJT) Ingot mai jan ƙarfe mai kama da monocrystalline
  • Kayan aiki:Manyan Tanderun Filin Zafi Mai Inci 32 (An Yi Kimantawa Raka'a 50)
  • Mafita:Abubuwan da aka tsarkake daga Halogen mai zurfin tsarkakken graphite (Toka ≤ 2-5 ppm) + Rufin CVD SiC
  • Tasirin da aka ƙayyade:An ƙara tsawon rayuwar masu ɗaukar marasa lafiya daga <100 μs zuwa >380 μs; Yawan amfanin ƙasa +18%; Tsawon lokacin filin zafi +30%.

Gabatarwa: Kalubalen Filin Zafin Inci 32 a Tsarin Girman Silikon N-Type Mai Inganci

Yayin da masana'antar photovoltaics ke sauyawa cikin sauri daga ƙwayoyin hasken rana na P-type PERC zuwa ƙwayoyin hasken rana na N-type TOPCon da Heterojunction (HJT), buƙatar wafers ɗin silicon mai tsarki ya yi tashin gwauron zabi. Abubuwan silicon na N-type suna buƙatar tsawon rai mai yawa na ɗaukar kaya (yawanci sama da 300 μs) da gurɓatar ƙazanta ta ƙarfe kusan sifili.

Domin ƙara yawan aiki, masana'antun silicon wafer suna faɗaɗa girman crucible zuwa inci 32 ko fiye. Duk da haka, aiki a yanayin zafi sama da 1,450°C a cikin filin zafi mai inci 32 yana haifar da ƙalubalen injiniya mai tsanani:

  1. Lalacewar Zafi da Rashin Daidaito:Manyan canje-canjen zafi suna haifar da nakasu da tsagewa a cikin na'urorin dumama graphite na yau da kullun da kuma ƙafafunsu.
  2. Gurɓatar Karfe Mai Sauyawa:Abubuwan da ke ɗauke da ƙazanta (Fe, Ni, Cu, V) a cikin graphite na gargajiya suna tururi yayin jan lu'ulu'u na dogon lokaci, suna ƙaura kai tsaye zuwa cikin narkakken silicon kuma suna haifar da mummunan lalacewa ga ƙananan masu ɗaukar kaya tsawon rayuwa.

Maganin Injiniya: Tsarkakewar Graphite Mai Tsarkakewa da Kariya daga CVD SiC

Domin shawo kan waɗannan matsalolin fasaha, VeTek Semiconductor ya ƙaddamar da ingantaccen haɓaka kayan aiki a duk faɗin taron filin zafi mai inci 32, wanda ya ƙunshi graphite mai yawan yawa wanda aka sanya masa tsarkake halogen mai zafi mai zafi da kuma rufin kariya na CVD Silicon Carbide (SiC).

1. Tsarkakewar Halogen Mai Zurfi (Abubuwan Toka ≤ 2-5 ppm)

Graphite na masana'antu na yau da kullun yana ɗauke da yawan toka da ke tsakanin 50 ppm da 200 ppm. A zafin jiki na 1,450°C a ƙarƙashin injin tsabtace iska, waɗannan abubuwan da ke haifar da ƙonewa suna yin ƙarfi. Tsarin Tsarkakewar Iskar Halogen Mai Zafi Mai Zafi Mai Yawa namu yana canza ƙazanta na ƙarfe zuwa mahaɗan halogen masu canzawa (chlorides/fluorides) a yanayin zafi sama da 2,400°C.

  • Gwajin Glow Discharge Mass Spectrometry (GDMS)yana tabbatar da cewa an rage yawan gurɓataccen ƙarfe (Fe, Cr, Ni, Cu, V) zuwa ƙasa da 0.5 ppm, wanda hakan ke samar da jimlar adadin toka na ≤ 2 ppm.
  • Sakamako:Yana kawar da juyin halittar iskar gas ta ƙarfe, yana kare wurin silikon da aka narke daga gurɓatawa a cikin awanni 120+ na zagayowar jan hankali.

2. Tsarin Graphite mai yawan yawa don daidaiton zafi

An ƙera sassan da suka haɗa da hita mai siffar graphite, mai hana ruwa shiga, da ganga mai hana ruwa shiga daga graphite mai yawan yawa (1.85 g/cm³), mai kyau-hatsi (girman hatsi <10 μm). Matsi na Isostatic yana tabbatar da faɗaɗa yanayin zafi na isotropic (CTE), yana hana damuwa ta zafi ta gida, warping, da tsagewar inji a ƙarƙashin zagayowar zafi mai maimaitawa.

3. Rufin Kariya na CVD Silicon Carbide (SiC)

An shafa muhimman abubuwan da ke fuskantar tururin silicon da iskar gas mai lalata da wani Layer mai kauri 50-80 μm na Silica Vapor Deposition (CVD) Silicon Carbide (SiC).

  • Shingen Tsatsa:Yana hana kai tsaye hulɗar sinadarai tsakanin tururin silicon mai canzawa (SiO2) da kuma sinadarin graphite (SiO2 + 2C → SiC + CO2), yana kawar da zaizayar ƙasa da kuma samar da ƙurar carbon.
  • Daidaiton Geometric:Yana kula da daidaiton yanayin filin zafi sama da tsawon lokacin sabis na 30%.

Bayanan Aiki da Tabbatar da Gwajin Fili

An gudanar da gwajin filin kwatantawa na tsawon watanni 6 a cikin tanderun CZ masu girman inci 32 na samarwa guda 50 a cibiyar kera wafer silicon na TOPCon mai mataki 1. A ƙasa akwai ma'aunin aiki da ke kwatanta abubuwan graphite na yau da kullun da maganin filin zafi mai tsabta na VeTek Semiconductor:

Ma'aunin Aiki Filin Zafin Graphite na Daidaitacce VeTek Tsarkake Graphite Magani
Abubuwan da ke cikin Tokar Graphite Mai Yawa 50 - 100 ppm ≤ 2 – 5 ppm (An Tsarkake Halogen)
Jimlar ƙazanta ta ƙarfe (GDMS) ~15 – 30 ppm (Fe, Ni, V) <0.5 ppm
Matsakaicin Rayuwar Masu Jigilar Ƙananan 'Yan Kasuwa 85 - 120 μs (Babban Bambanci) 380 – 450 μs (Mafi Girma Kullum)
Tsawon Rayuwar Sashen Filin Zafi Kekunan Jawo 60 - 75 Kekunan Ja 90 – 105 (+30%)
Matsakaicin Yawan Amfani da Ingot na A-Grade N-Type Kashi 74.5% 92.5% (+18% Inganta Yawan Amfani)

Tambayoyin da Ake Yawan Yi (FAQ)

T1: Menene babban dalilin asarar amfanin gona a cikin jan silicon monocrystalline na inci 32 na N-type?

A1:Asarar yawan amfanin ƙasa galibi tana faruwa ne sakamakon gurɓatar ƙazanta daga ƙarfe (rage tsawon rayuwar masu ɗaukar kaya) da kuma lalacewar yanayin zafi na na'urorin dumama graphite mai girman diamita, wanda ke kawo cikas ga haɗin kristal mai ƙarfi da ruwa.

T2: Ta yaya tsarkakewar halogen ke cimma adadin toka a ƙasa da 5 ppm?

A2:Tsaftace halogen yana sanya sassan graphite zuwa yanayin zafi mai yawa (>2,400°C) yayin da yake allurar iskar chlorine da fluorine. Waɗannan iskar gas ɗin suna amsawa da abubuwa masu zurfi na ƙarfe, suna mayar da su zuwa ƙwayoyin ƙarfe masu canzawa waɗanda ke fitowa, suna barin graphite mai tsarki sosai.

T3: Za a iya sake shafa fenti na CVD SiC ko a shafa shi ga dukkan abubuwan da ke cikin filin zafi na graphite?

A3:Ana amfani da murfin CVD SiC a kan abubuwan da ke lalacewa sosai kamar su graphite crucibles, jagororin kwarara, masu dumama, da ganga masu rufi. Dangane da lalacewar substrate, za a iya sake yin amfani da wasu sassan da kuma sake shafa su, wanda ke rage yawan kuɗin aiki.

Kammalawa & Shawarwari na Fasaha

Haɓakawa zuwa abubuwan da aka ƙera na isostatic graphite mai matuƙar tsarkakewa tare da kariyar CVD SiC yana ba da hanya kai tsaye, mai aunawa don magance matsalolin yawan amfanin ƙasa da ƙazanta a cikin haɓakar silicon monocrystalline na inci 32 na N. Tare da haɓaka yawan amfanin ƙasa da kashi 18% da tsawaita tsawon lokacin filin zafi na 30%, masana'antun wafer na hasken rana za su iya cimma babban ROI.

Inganta Filin Zafin Monocrystalline ɗinku a Yau

Sauke Cikakken Takardar Bayanan Fasaha (TDS) ko tuntuɓi ƙwararrun injiniyanmu don samun ƙiyasin da aka keɓance.

Inganta Filin Zafin Monocrystalline ɗinku a Yau

Sauke Cikakken Takardar Bayanan Fasaha (TDS) ko tuntuɓi ƙwararrun injiniyanmu don samun ƙiyasin da aka keɓance.


Lokacin Saƙo: Agusta-15-2026
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