Ibisubizo bya High-Purity Graphite Heater kuri Semiconductor Epitaxy

Mu buryo bwa semiconductor bukoresha ubushyuhe bwinshi nka MOCVD (Metal-Organic Chemical Vapor Deposition) na SiC epitaxial growth, kugenzura ubushyuhe bigena mu buryo butaziguye ingano y'ubugari bwa filime, ingano y'imiti ikoreshwa mu gushyushya, n'umusaruro wa wafer. Nk'igice cy'ingenzi cy'ubushyuhe,Igishyushya cya Grafiti gifite isuku nyinshiigomba gukora neza kandi mu buryo buhoraho mu bushyuhe bukabije burenga 1600°C mu bidukikije birimo imyuka yangiza cyane. Ivanze inyigo z’ingero z’abakiriya nyakuri n’ubumenyi bw’ingenzi ku bicuruzwa, iyi nkuru itanga isesengura ryimbitse ry’inyungu za tekiniki, imiterere y’imiterere, n’uruhare rw’ingenzi rw’ibishyushya bya grafiti bifite isuku nyinshi mu gukora wafer ya semiconductor.

Kuki wahitamo icyuma gishyushya gikoresha grafiti nyinshi (High-Purity Graphite Heater) kuri sisitemu za MOCVD?

Mu bikorwa by'ingenzi nka MOCVD na GaN/SiC epitaxy, ndetse n'ihindagurika ry'ubushyuhe rito cyane (>2°C) rishobora gutera impinduka mu bushyuhe cyangwa inenge za kristale mu gice cya epitaxial. Gukoresha ubwiyongere bw'ubushyuhe (100–150 W/m·K) hamwe n'ubwiyongere bw'ubushyuhe buri hasi cyane (CTE), ibikoresho bya grafiti bifite isuku nyinshi bitwara ubushyuhe neza kandi vuba mu buryo bumwe ku buso bwose bwa susceptor na wafer.

Ubushyuhe bungana n'ubugenzure bw'ahantu henshi

Kugira ngo hirindwe igihombo cy'imirasire y'ubushyuhe ku nkengero z'icyumba cya epitaxy, ubushyuhe bwa grafiti bufite isuku nyinshi bukunze kuba bufite imiterere yihariye yo kugenzura ubushyuhe mu bice byinshi. Binyuze mu guhindura neza aho ubushyuhe bugarukira, injeniyeri zihindura ahantu hahurira uruziga n'ubushyuhe bitewe n'imiterere y'ubushyuhe bw'icyumba. Ibi bigumana ihinduka ry'ubushyuhe mu gice cy'ubushyuhe mu gice cy'ubushyuhe kiri muri ± 1°C, biha icyizere cy'uko amashanyarazi ahoraho kuri wafer zose ziri kuri disiki.

Kugenzura Ibikubiye mu Ivu no Kugenzura Ibidukikije Bisukuye Cyane

Inzira za epitaxy za semiconductor zikunze kwibasirwa cyane n'imyanda y'icyuma. Graphite isanzwe y'inganda irimo ibintu by'icyuma bike nka icyuma (Fe), nikeli (Ni), na umuringa (Cu), bihindagurika byoroshye kandi bigakwirakwira mu gice cya epitaxial ku bushyuhe bwinshi, bigatuma ingufu z'amashanyarazi zigabanuka ndetse n'uburyo bwo gutwara ibintu bihinduka. Ibikoresho bishyushya graphite bifite ubuziranenge bwinshi bikorerwa mu buryo bwo gusukura chlorination mu bushyuhe bwinshi, bigabanya ivu ryose kugeza munsi ya 5 ppm (kandi munsi ya 2 ppm kugira ngo habeho urwego rwo hejuru rwa semiconductor), birinda kwanduzwa kwa epitaxial wafers ziturutse ku mwanda w'ubushyuhe aho isoko rituruka.

Ibintu bigezweho byo gushyushya Graphite mu gutunganya Wafer ya Semiconductor

Ibintu bishyushya hakoreshejwe semiconductor bikunze gushyuha no gukonjesha mu buryo bwihuse kuva ku bushyuhe bw'icyumba kugeza kuri dogere selisiyusi ibihumbi. Bitandukanye n'insinga zishyushya mu byuma (nka tungsten cyangwa molybdenum), zikunda kongera gushya, gucika intege, cyangwa kugwa mu bushyuhe bwinshi, grafiti igaragaza imiterere yihariye: imbaraga ziyongera uko ubushyuhe bugenda buzamuka.

Imbaraga za mekanike ku bushyuhe bwinshi no kurwanya umunaniro mu miterere

Ingufu zo gukurura no guhindagurika kw'ibikoresho bya grafiti ziyongera uko ubushyuhe bwiyongera, zikaba hagati ya 2000°C na 2500°C. Iyi miterere ituma ibyuma bishyushya grafiti bitagwa cyangwa ngo bivunike mu buryo bw'imashini bitewe n'imirasire ikomeye y'ubushyuhe n'imikorere y'ubushyuhe bwinshi. Kubera iyo mpamvu, kudakomera k'amashanyarazi bigumaho mu gihe kirekire cy'imikorere, bigabanya cyane igihe cyo kudakora neza kitateganijwe.

Imiterere y'imashini za 3D nziza n'imiterere y'uruziga rugoye

Imashini zigezweho zikora ibikoresho bya semiconductor zisaba imiterere mito cyane. Graphite ifite ubushobozi bwo gukora cyane kandi ishobora gutunganywa binyuze mu gutunganya CNC ifite umurongo wa 5-axis wihariye mu buryo buhambaye mu miterere y’urusobe rw’amashanyarazi—nk’imiterere y’imigozi itatu, inzira zifunze za serpentine, n’imirongo ibiri ifite helix. Iyi miterere y’imiterere y’imiterere yimbitse ituma ubuso bushyuha burushaho kuba bwiza mu mwanya muto, bigatuma habaho umuvuduko mwinshi w’ingufu hamwe n’ingaruka nke zo gusohora.

Ibyiza by'ingenzi by'ibikoresho byo gushyushya bya SiC Coated Graphite

Kugira ngo bihangane n’imimerere ikomeye—nk’ikirere gishyushya ubushyuhe bwinshi cyangwa imyuka irimo chlorine/fluorine—gushyira urwego rwa Silicon Carbide (CVD SiC Coating) hejuru y’ubutaka bwa grafiti ifite ubuziranenge bwinshi byabaye igisubizo gisanzwe mu nganda.

Ubudahangarwa bwa Hydrogen Etching na Zero Particles Shocking

Mu gihe cya SiC na Silicon epitaxy, ibyinshi bya H₂Gazi iraca cyane grafiti idapfutse ku bushyuhe bwinshi (ibara rya hydrogen rikora gaze ya methane), bigatuma ubuso bwa grafiti bucika, bushobora gucika, kandi bugatera ubwandu bw'udukoko. Igitambaro kinini cya CVD SiC gifunga 100% utuyobo duto ku buso bwa grafiti, kigatandukanya burundu isuri ya gaze kandi kigashyiraho ibidukikije bisukuye cyane nta tunyangingo twacitse.

Kuramba mu itangazamakuru rikaze no kugabanya ikiguzi cyose cy'umutungo (TCO)

Mu bidukikije birimo imyuka ikora cyane nka HCl na NH₃, Irangi rya CVD SiC rigaragaza ubukana bukabije bwa shimi. Ntabwo ririnda gusa substrate ya grafiti kwangirika ahubwo rinanongera igihe cyo gusimbuza ibintu bishyushya (ubusanzwe byongera ubuzima bwa serivisi ku kigero kirenga 200%). Ibi bigabanya cyane ikiguzi cyose cya semiconductor fab (TCO) hamwe n'ikiguzi cyagabanijwe kuri buri wafer.

Inyigo y'Urugero: Gukemura Ubushyuhe Busa n'Ukwanduzwa n'uduce duto mu Buhinde bwa SiC

Ingingo z'ububabare bw'abakiriya:Uruganda ruzwi cyane rw’ibisekuru bya gatatu mu Budage rukora ibikoresho bya epitaxy byo mu bwoko bwa semiconductor rwahuye n’imbogamizi ebyiri zikomeye mu gihe cy’izamuka rya epitaxial rya SiC rya santimetero 6 (ubushyuhe bwa process 1650°C, H2O₂+ TCS atmosphere): Icya mbere, ubugari bw'urwego rwa epitaxial ku nkengero za wafer bwageze kuri ± 3.8%, bituma ibikoresho byo ku nkengero binanirwa gukora. Icya kabiri, icyuma gishyushya cya OEM grafiti cyagaragaje gushonga no kwangirika gukomeye kwa hydrogen inyuma y'amasaha 120 gusa gikoreshwa, bituma uduce twinshi tw'ibice bigwa mu cyumba cy'imyitozo - birenga ingano y'ubuziranenge ku kigero cya 3× ku mpuzandengo.

Gusuzuma ingufu za VET n'umuti wihariye

Nyuma yo kwitabazwa, itsinda ry’abahanga mu by’ubuhanga rya VET Energy ryakoze isuzuma ry’amashanyarazi n’amazi ku gishyushya cya OEM cy’umwimerere. Isuzuma ryagaragaje ko nta ngufu zihagije zo gushyushya ku nkengero no ku myenge mito/imivuduko y’ubushyuhe mu gipfunyika cya SiC (ubunini bw’igipfunyika bwari 60μm gusa hamwe n’ubufatanye budakomeye). Mu gusubiza, VET Energy yatanze igisubizo cy’ubuhanga cyihariye:

• Kunoza Imiterere y'Ubushyuhe:Hashyizweho igishushanyo mbonera cy’uburyo bwo kugenzura ubukana bw’amashanyarazi mu bice bitatu, bigabanya igice cy’ubushyuhe ku kigero cya 8% hafi y’aho amashanyarazi akwirakwira kugira ngo hongerwe ubucucike bw’ingufu zo mu gace.
• Kuvugurura Substrate Isuku Cyane:Grafiti ya isostatic isostatic yatoranijwe ifite ubucucike bwinshi ifite ivu riri munsi ya 2 ppm, ihuye neza n'ikigereranyo cyo kwaguka k'ubushyuhe (CTE) n'igishishwa cya SiC (CTE ihuye >98%).
• Kuvugurura imikorere ya CVD SiC:Yakoresheje uburyo bwo kongera CVD, yongera ubugari bwa SiC yo gutwikira ku buso kugeza kuri 150 ± 10 μm ifite imiterere y'ibinyampeke birebire kandi bidafite imyenge ishobora guhangana na 1700°CH₂gusohora amazi.

Ibisubizo by'Ishyirwa mu Bikorwa n'Agaciro k'Abakiriya Byatanzwe

Nyuma y'iminsi 30 yikurikiranya yo kugenzura umurongo w'umusaruro, umukiriya yavuze ko imikorere ye yarushijeho kuba myiza: ingano y'ubugari bwa epitaxial ya full-wafer (harimo no gushyiramo uburebure bwa 3mm) yazamutse cyane uhereye ku± 3.8% kugeza ± 0.8%; icyuma gishyushya cyakoraga buri gihe kuriamasaha arenga 400hatabayeho gucika kw'igitambaro cyangwa kwangirika k'ubuso; inenge z'uduce tw'icyumba kimwe (> 0.5μm) zariyagabanutseho 85%Ibi byatanze umusaruro wa prime chip kuri buri wafer kandi byagabanyije ikiguzi cyo kubungabunga ibikoresho buri mwaka ku kigero cya 12% ku mwaka.85.000€.

Ibibazo Bikunze Kubazwa