Kūʻai wela Kina Mirror Polish Silicon Carbide Nitride Ceramic Rod Si3n4 Ceramic Tube

Wehewehe Pōkole:

Hoʻohuihui Kemika: Silicon Carbide

Paʻakikī: ≥110 HS

Ka nui o ka paʻa: 3.10-3.15 g/cm3

Ikaika Kūlou:>350MPa

Ka hoʻokele wela:>120


Nā kikoʻī huahana

Nā Lepili Huahana

ʻO ka pahuhopu o kā mākou hui e hana me ka kūpaʻa, e lawelawe ana i kā mākou mea kūʻai aku āpau, a e hana mau ana i ka ʻenehana hou a me ka mīkini hou no ke kūʻai aku wela Kina Mirror Polish Silicon Carbide Nitride Ceramic Rod Si3n4 Ceramic Tube, Ke ʻimi nei ʻoe i kahi huahana kiʻekiʻe e kūlike me kāu kiʻi ʻoihana maikaʻi me ka hoʻonui ʻana i kāu huahana a lawelawe paha? E hoʻāʻo i kā mākou mau hoʻonā kiʻekiʻe. E hōʻoia kāu koho no ke akamai!
ʻO kā mākou ʻoihana e hana pono, e lawelawe ana i kā mākou mea kūʻai aku āpau, a e hana mau ana me ka ʻenehana hou a me ka mīkini hou noKina Silicon Nitride, Koʻokoʻo Si3n4, Ua koi mau mākou i ka ulu ʻana o nā hoʻonā, hoʻolilo i nā kālā maikaʻi a me nā kumuwaiwai kanaka i ka hoʻonui ʻana i ka ʻenehana, a hoʻomaʻamaʻa i ka hoʻomaikaʻi ʻana i ka hana ʻana, e hoʻokō ana i nā makemake o nā mea kūʻai mai nā ʻāina a me nā wahi āpau.
ʻO ka ʻūpā keramika Silicon Carbide Sintered

ʻO ka carbide silicon sintered pressureless (SSIC)Hana ʻia me ka hoʻohana ʻana i ka pauka SiC maikaʻi loa e loaʻa ana nā mea hoʻohui sintering. Hana ʻia ia me ka hoʻohana ʻana i nā ʻano hana hoʻokumu maʻamau no nā keramika ʻē aʻe a sintered ma 2,000 a 2,200° C i loko o kahi lewa kinoea inert. Me nā mana maikaʻi, me nā nui o ka palaoa < 5 um, loaʻa nā mana coarse-grained me nā nui o ka palaoa a hiki i ka 1.5 mm.

ʻOkoʻa ka SSIC e ka ikaika kiʻekiʻe e noho mau ana a hiki i nā mahana kiʻekiʻe loa (ma kahi o 1,600° C), e mālama ana i kēlā ikaika no nā wā lōʻihi!

 

Nā pono huahana:

Ke kūpaʻa ʻana i ka oxidation wela kiʻekiʻe

Kū'ē maikaʻi loa i ka palaho

Ke kūpaʻa maikaʻi o ka abrasion

Ka nui o ke alakaʻi wela
ʻO ka lubrication ponoʻī, ka haʻahaʻa haʻahaʻa
Paʻakikī kiʻekiʻe
Hoʻolālā i hoʻopilikino ʻia.

 

Nā waiwai loea:

Nā Mea ʻĀpana ʻIkepili
Paʻakikī HS ≥110
Ka helu porosity % <0.3
Ka nui o ka paʻa g/cm3 3.10-3.15
Hoʻopaʻa MPa >2200
Ikaika Haʻihaʻi MPa >350
Ka helu hoʻonui 10/°C 4.0
ʻIke o Sic % ≥99
Ka hoʻokele wela W/mk >120
Modulus Elastic GPa ≥400
Mahana °C 1380

 

ʻO ka ʻūpā keramika Silicon Carbide Sintered SsicʻO ka ʻūpā keramika Silicon Carbide Sintered SsicʻO ka ʻūpā keramika Silicon Carbide Sintered SsicʻO ka ʻūpā keramika Silicon Carbide Sintered SsicʻO ka ʻūpā keramika Silicon Carbide Sintered Ssic

 

 

Nā Kiʻi Kikoʻī

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