Ka Hana ʻana a me nā Waiwai o nā Seramika Porous Silicon Carbide

Ⅰ. Hoʻolauna

Nā Keramika Porous Silicon Carbide (Porous SiC)he mau mea keramika holomua e hoʻohui i nā waiwai koʻikoʻi o ka silicon carbide me kahi ʻano porous i hana pono ʻia. ʻAʻole e like me nā keramika SiC paʻa, hoʻolauna ka porous SiC i nā pores i hoʻopili ʻia e hāʻawi ana i nā hana hou aʻe, me ka permeability i kāohi ʻia, ka hoʻolālā māmā, ka insulation thermal, a me ka hiki ke lawe i ka wai.

Me ke kūpaʻa wela maikaʻi loa, ke kūpaʻa kemika, a me ka hilinaʻi mechanical, ua lilo nā keramika SiC porous i mea nui i nā ʻoihana wela kiʻekiʻe, ʻoi aku ka hana semiconductor, kahi e koi ai nā wahi hana i ka maʻemaʻe kiʻekiʻe, ke kūpaʻa i ka pala, a me ke kūpaʻa hana lōʻihi.

II. Nā Waiwai Mea o nā Seramika Porous Silicon Carbide

1. Paʻa o ka Mahana Kiʻekiʻe

Ua kaulana ʻo Silicon carbide no kāna hana maikaʻi loa ma lalo o nā mahana koʻikoʻi ma muli o kona pilina covalent Si-C ikaika. Mālama ka Porous SiC i ka kūpaʻa o ke ʻano i nā wahi wela kiʻekiʻe, e kūpono ai no ka hana wela semiconductor, nā ʻōnaehana epitaxy, a me nā ʻāpana umu.

ʻO kona coefficient hoʻonui wela haʻahaʻa a me ke kūpaʻa haʻalulu wela maikaʻi loa e kōkua i ka hōʻemi ʻana i ka deformation a hoʻomaikaʻi i ke kūpaʻa o ke kaʻina hana.

2. Ke kūpaʻa kemika a me ka plasma kiʻekiʻe loa

Hoʻokomo ka hana ʻana o Semiconductor i nā kinoea hoʻouka kaua a me nā kaiapuni plasma, me nā kinoea chlorine, plasma fluorine, a me nā lewa pane wela kiʻekiʻe.

Hāʻawi nā keramika SiC porous i kēia mau mea:

• Ke kūpaʻa oxidation maikaʻi loa
• Paʻa kemika kiʻekiʻe
• Ke kūpaʻa ikaika o ka erosion plasma
• Nā ʻano haumia haʻahaʻa

Kōkua kēia mau pono i ka hōʻemi ʻana i ka hana ʻāpana a hoʻolōʻihi i ke ola o nā ʻāpana i nā lako semiconductor.

3. Ka Porosity i kāohi ʻia a me ka Permeability Gas

ʻO ka pōmaikaʻi nui o ka porous SiC ʻo ia kona ʻano pore hiki ke hoʻololi ʻia. Ma ka kaohi ʻana i ka nui o ka pore, ka hoʻolaha ʻana, a me ka pilina, hiki i nā mea hana ke hoʻomaikaʻi i ke kaulike ma waena o ka ikaika mechanical a me ka permeability.

ʻO kēia hiʻohiʻona kūikawā e hiki ai i ka porous SiC ke hana ma ke ʻano he:

• Nā mea hoʻolaha kinoea
• Nā ʻano kānana
• Nā ʻāpana hoʻokele wela

I. Nā ʻenehana hana o nā keramika Porous Silicon Carbide

ʻO ka hana o nā keramika SiC porous e hilinaʻi nui ʻia i nā ʻano hana a me ka hoʻolālā microstructure.

Hoʻemi ʻana i ka Carbothermal

Hoʻopuka kēia kaʻina hana kuʻuna i ka SiC porous ma o nā hopena wela kiʻekiʻe ma waena o nā mea i loaʻa ka silicon a me nā kumu kalapona. Hiki iā ia ke hoʻokumu ʻia nā ʻōnaehana SiC maʻemaʻe kiʻekiʻe me ke kūpaʻa wela maikaʻi loa.

Sintering Pae Wai

Hoʻohana ka sintering wai-phase i nā mea hoʻohui e hoʻomaikaʻi i ka hoʻopili ʻana o nā ʻāpana a me ka densification. Ma ka hoʻoponopono ʻana i ka mahana sintering a me ka kemika hoʻohui, hiki i nā mea hana ke hoʻokō i ka ikaika mechanical i hoʻonui ʻia a me ka hoʻolaha pore.

Ka Hoʻokomo ʻana o ka Mahu Kemika (CVI)

Hoʻokomo ʻo CVI i nā mea hoʻomaka kinoea i loko o nā ʻano porous, kahi e waiho ai ʻo SiC ma nā ʻili o loko. Hoʻomaikaʻi kēia ʻano hana i ka ikaika o ke ʻano, ka maʻemaʻe, a me ke kūpaʻa o ka mahana kiʻekiʻe.

Nā ʻAno Hoʻohua a me nā Template

Hoʻokumu nā ʻenehana hua a me nā ʻenehana template-based i nā ʻano pore hierarchical ma o ka kaohi ʻana i nā mea hana pore a i ʻole nā ​​​​​​templates sacrificial. Hāʻawi kēia mau ʻano hana i ka permeability maikaʻi loa a me nā hoʻolālā pore i hana ʻia.

Ⅳ. Nā noi ma ka hana ʻana o Semiconductor

Ma muli o kona hui kūikawā o nā waiwai wela, kemika, a me ke kūkulu ʻana, hoʻohana nui ʻia nā keramika SiC porous i nā kaʻina hana semiconductor.

Nā ʻĀpana Hoʻolaha Kinoea

I loko o nā ʻōnaehana CVD, PECVD, a me ALD, hiki i ka porous SiC ke lawelawe ma ke ʻano he mea hoʻolaha kinoea a me nā papa hoʻolaha e hoʻokō ai i ke kahe like ʻana o ke kinoea hana a hoʻomaikaʻi i ke kūlike o ka waiho ʻana o ka kiʻiʻoniʻoni.

Nā Lako Hana Plasma

I loko o nā ʻōnaehana etching plasma a me ka hoʻomaʻemaʻe, hāʻawi nā ʻāpana porous SiC i ke kūpaʻa maikaʻi loa i nā kaiapuni plasma corrosive, e hōʻemi ana i ka haumia o nā ʻāpana a hoʻomaikaʻi i ka hilinaʻi o nā lako.

Nā ʻōnaehana Epitaxy SiC a me GaN

No ka hana ʻana o ka semiconductor hanauna ʻekolu, hāʻawi ka porous SiC i ka hoʻokele wela i hoʻomaikaʻi ʻia a me ke kūpaʻa o ke kaʻina hana i nā wahi ulu epitaxial wela kiʻekiʻe.

Nā ʻāpana lawelawe wafer

Nā ʻūpā vacuum SiC porousa menā kākoʻo waferhāʻawi i ka pololei kiʻekiʻe, ka haumia haʻahaʻa, a me ke kūpaʻa kemika maikaʻi loa no ka nānā ʻana i ka wafer, ka lithography, a me ka hana wela.

Ⅴ. Hopena

Nā keramika Silicon Carbide Poroushōʻike i ka ulu ʻana oNā mea SiCmai nā keramika kūkulu kuʻuna a hiki i nā ʻāpana semiconductor hana. Ma o nā ʻenehana hana holomua a me ka kaohi ʻana i ka hoʻonohonoho pore pololei, hoʻokō ka porous SiC i kahi kaulike kūpono ma waena o ka ikaika, ka permeability, ka hana wela, a me ke kūpaʻa kemika.

I ka hoʻomau ʻana o ka hana ʻana o ka semiconductor i ka holomua i nā mahana kiʻekiʻe a me ka kaohi ʻana i ka haumia, e pāʻani nā keramika SiC porous i kahi hana koʻikoʻi i kaNā ʻōnaehana CVD, nā lako hana plasma, ka lawelawe wafer, a me nā ʻenehana hana semiconductor hanauna hou.