Ukucubungula kanye Nezakhiwo Ze-Ceramics Ze-Silicon Carbide Ezinezimbobo

Ⅰ. Isingeniso

I-Silicon Carbide Enezimbobo (I-SiC Enezimbobo) I-Ceramicsziyizinto zobumba ezithuthukisiwe ezihlanganisa izakhiwo ezivelele ze-silicon carbide nesakhiwo esinezimbobo esakhiwe ngokucophelela. Ngokungafani ne-SiC ceramics ende, i-SiC enezimbobo yethula izimbobo ezixhumene ezihlinzeka ngemisebenzi eyengeziwe, kufaka phakathi ukungena okulawulwayo, ukwakheka okulula, ukuvikela ukushisa, kanye nekhono elithuthukisiwe lokuthuthwa koketshezi.

Njengoba kunokuqina okuhle kakhulu kokushisa, ukumelana namakhemikhali, kanye nokuthembeka kwemishini, izitsha ze-SiC ceramics ezinezimbobo ziye zaba zibaluleke kakhulu ezimbonini ezishisa kakhulu, ikakhulukazi ukukhiqiza i-semiconductor, lapho izindawo zenqubo zidinga ubumsulwa obuphezulu, ukumelana nokugqwala, kanye nokuzinza kokusebenza kwesikhathi eside.

Ⅱ. Izakhiwo zezinto ze-Silicon Carbide Ceramics ezinezimbobo

1. Ukuzinza Kwezinga Lokushisa Eliphezulu

I-silicon carbide yaziwa ngokusebenza kwayo okuhle kakhulu ngaphansi kwamazinga okushisa aphezulu ngenxa yokubopha kwayo okuqinile kwe-Si-C covalent. I-SiC enezimbobo igcina ubuqotho besakhiwo ezindaweni ezishisa kakhulu, okwenza ifanelekele ukucubungula ukushisa kwe-semiconductor, izinhlelo ze-epitaxy, kanye nezingxenye zesithando somlilo.

I-coefficient yayo yokwandisa ukushisa okuphansi kanye nokumelana okuhle kakhulu nokushaqeka kokushisa kusiza ukunciphisa ukuguquguquka nokuthuthukisa ukuzinza kwenqubo.

2. Ukumelana Okuphezulu Kwamakhemikhali Ne-Plasma

Ukukhiqizwa kwe-semiconductor kuhilela amagesi anamandla kanye nezindawo ze-plasma, okuhlanganisa amagesi asekelwe ku-chlorine, i-fluorine plasma, kanye nemimoya ephendulayo yokushisa okuphezulu.

Izitsha zobumba ze-SiC ezinezimbobo zinikeza:

• Ukumelana okuhle kakhulu kwe-oxidation
• Ukuqina kwamakhemikhali okuphezulu
• Ukumelana okunamandla kokuguguleka kwe-plasma
• Izici zokungcoliswa okuphansi

Lezi zinzuzo zisiza ekunciphiseni ukukhiqizwa kwezinhlayiya futhi zandise isikhathi sokuphila kwezingxenye emishinini ye-semiconductor.

3. Ukulawulwa Kokugeleza Kwegesi Nokuvunyelwa Kwegesi

Inzuzo eyinhloko ye-SiC enezimbobo yisakhiwo sayo sembobo esilungisekayo. Ngokulawula usayizi wembobo, ukusatshalaliswa, kanye nokuxhumana, abakhiqizi bangenza ngcono ibhalansi phakathi kwamandla omshini kanye nokuvuleka kwawo.

Lesi sici esiyingqayizivele senza i-SiC enezimbobo isebenze njenge:

• Izinto zokusabalala kwegesi
• Izakhiwo zokuhlunga
• Izingxenye zokuphathwa kokushisa

Ⅲ. Ubuchwepheshe Bokucubungula be-Porous Silicon Carbide Ceramics

Ukusebenza kwe-SiC ceramics enezimbobo kuncike kakhulu ezindleleni zokukhiqiza kanye nomklamo wesakhiwo esincane.

Ukunciphisa Ama-carbohydrate

Le nqubo yendabuko ikhiqiza i-SiC enezimbobo ngokusebenzisa ukusabela kokushisa okuphezulu phakathi kwezinto eziqukethe i-silicon kanye nemithombo yekhabhoni. Ivumela ukwakheka kwezinhlaka ze-SiC ezihlanzekile kakhulu ngokuqina okuhle kakhulu kokushisa.

Ukuhlanza Isigaba Soketshezi

Ukusinta kwesigaba soketshezi kusebenzisa izithasiselo ukuthuthukisa ukubopha kwezinhlayiya kanye nokuqina kwazo. Ngokulungisa izinga lokushisa lokusinta kanye nekhemikhali yokwengeza, abakhiqizi bangafinyelela amandla okusebenza kanye nokusatshalaliswa kwemigodi okuthuthukisiwe.

Ukungena Komusi Wamakhemikhali (i-CVI)

I-CVI ingenisa izandulela zegesi ezakhiweni ezinezimbobo, lapho i-SiC igcina khona ezindaweni zangaphakathi. Le ndlela ithuthukisa amandla esakhiwo, ubumsulwa, kanye nokuqina kokushisa okuphezulu.

Izindlela Zokwenza Igwebu Nezifanekiso

Ubuchwepheshe obusebenzisa igwebu kanye nobuchwepheshe obusekelwe kumathempulethi budala izakhiwo ze-pore ezilandelanayo ngokulawula izinto ezenza i-pore noma amathempulethi omhlatshelo. Lezi zindlela zinikeza ukuvuleka okuhle kakhulu kanye nokwakheka kwe-pore okwenziwe ngokwezifiso.

Ⅳ. Izicelo ekukhiqizweni kwe-Semiconductor

Ngenxa yenhlanganisela yayo eyingqayizivele yezakhiwo zokushisa, zamakhemikhali, nezesakhiwo, izitsha ze-SiC ezinezimbobo zisetshenziswa kakhulu ezinqubweni ze-semiconductor.

Izingxenye Zokusatshalaliswa Kwegesi

Ezinhlelweni ze-CVD, PECVD, kanye ne-ALD, i-SiC enezimbobo ingasebenza njengezinto zokusabalalisa igesi kanye namapuleti okusabalalisa ukuze kufezwe ukugeleza kwegesi okufanako futhi kuthuthukiswe ukuhambisana kokufakwa kwefilimu.

Imishini Yokucubungula I-Plasma

Ezinhlelweni zokuhlanza nokugaya i-plasma, izingxenye ze-SiC ezinezimbobo zinikeza ukumelana okuphezulu ezindaweni ezigqwalisayo ze-plasma, kunciphisa ukungcola kwezinhlayiya futhi kuthuthukise ukuthembeka kwemishini.

Izinhlelo ze-SiC kanye ne-GaN Epitaxy

Ekukhiqizweni kwe-semiconductor yesizukulwane sesithathu, i-SiC enezimbobo inegalelo ekuthuthukisweni kokuphathwa kokushisa kanye nokuzinza kwenqubo ezindaweni zokukhula kwe-epitaxial ezinokushisa okuphezulu.

Izingxenye Zokuphatha I-Wafer

Ama-chuck e-vacuum e-SiC anezimbobofuthiizisekelo ze-waferinikeza ukunemba okuphezulu, ukungcola okuphansi, kanye nokumelana okuhle kwamakhemikhali kokuhlolwa kwe-wafer, i-lithography, kanye nokucubungula ukushisa.

Ⅴ. Isiphetho

I-Silicon Carbide Ceramics enezimboboimelela ukuvela kweIzinto ze-SiCkusukela ku-ceramics yesakhiwo sendabuko kuya ezingxenyeni ze-semiconductor ezisebenzayo. Ngobuchwepheshe bokucubungula obuthuthukisiwe kanye nokulawulwa kwesakhiwo se-pore okunembile, i-SiC enezimbobo ifinyelela ibhalansi efanele phakathi kwamandla, ukuvuleka, ukusebenza kokushisa, kanye nokuqina kwamakhemikhali.

Njengoba ukukhiqizwa kwe-semiconductor kuqhubeka nokuqhubekela phambili ekushiseni okuphezulu kanye nokulawulwa okuqinile kokungcola, i-SiC ceramics enezimbobo izodlala indima ebaluleke kakhulu ku-Izinhlelo ze-CVD, imishini yokucubungula i-plasma, ukuphathwa kwe-wafer, kanye nobuchwepheshe bokukhiqiza i-semiconductor yesizukulwane esilandelayo.