Nkà na ụzụ uto epitaxial na ọka oxidized - Ⅱ

2. Mmụba nke ihe nkiri dị gịrịgịrị nke epitaxial

Ihe e ji mee ihe a na-enye akwa nkwado anụ ahụ ma ọ bụ akwa na-eduzi ihe maka ngwaọrụ ike Ga2O3. Ihe ọzọ dị mkpa bụ akwa ọwa ma ọ bụ akwa epitaxial nke e ji eme ihe maka iguzogide voltaji na ibugharị ihe. Iji mee ka voltaji mmebi dịkwuo elu ma belata iguzogide ihe, ọkpụrụkpụ a na-achịkwa na ntinye doping, yana mma ihe kachasị mma, bụ ụfọdụ ihe achọrọ. A na-ejikarị akwa epitaxial Ga2O3 dị elu eme ihe site na iji molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD), halide vapor deposition (HVPE), pulsed laser deposition (PLD), na foog CVD deposition techniques.

Tebụl 2 Ụfọdụ teknụzụ epitaxial na-anọchite anya ya

Usoro MBE nke 2.1

A maara teknụzụ MBE maka ikike ya itolite ihe nkiri β-Ga2O3 dị elu, nke na-enweghị ntụpọ, yana doping ụdị n-ụdị a na-achịkwa n'ihi gburugburu ebe obibi ya dị elu nke ukwuu na ịdị ọcha dị elu nke ihe. N'ihi ya, ọ ghọọla otu n'ime teknụzụ β-Ga2O3 dị gịrịgịrị a na-amụkarị ma nwee ike ire ere. Na mgbakwunye, usoro MBE kwadebekwara nke ọma heterostructure β-(AlXGa1-X)2O3/Ga2O3 dị gịrịgịrị nke ọma. MBE nwere ike inyocha nhazi elu na ọdịdị n'oge na-adịghị anya site na iji nkọwapụta oke ike electron diffraction (RHEED). Agbanyeghị, ihe nkiri β-Ga2O3 a na-akọ site na iji teknụzụ MBE ka na-eche ọtụtụ ihe ịma aka ihu, dị ka obere ọnụego uto na obere nha ihe nkiri. Ọmụmụ ihe ahụ chọpụtara na ọnụego uto ahụ dị n'usoro nke (010)>(001)>(−201)>(100). N'okpuru ọnọdụ Ga-rich dị ntakịrị nke 650 ruo 750°C, β-Ga2O3 (010) na-egosipụta uto kacha mma yana elu dị larịị na ọnụego uto dị elu. Site na iji usoro a, e nwetara β-Ga2O3 epitaxy nke ọma site na oke RMS nke 0.1 nm. β-Ga2O3. N'ebe Ga-rich, ihe nkiri MBE a kụrụ n'okpomọkụ dị iche iche ka egosiri na eserese ahụ. Novel Crystal Technology Inc. emepụtala wafers β-Ga2O3MBE 10 × 15mm2 nke ọma na epitaxial. Ha na-enye nnukwu kristal β-Ga2O3 nke nwere ọkpụrụkpụ nke 500 μm na XRD FWHM n'okpuru sekọnd 150 arc. Ihe mejupụtara ya bụ Sn doped ma ọ bụ Fe doped. Ihe na-eduzi Sn-doped nwere njupụta doping nke 1E18 ruo 9E18cm−3, ebe ihe na-egbochi ihe mgbochi ígwè nwere nguzogide karịa 10E10 Ω cm.

2.2 Usoro MOCVD

MOCVD na-eji ihe ndị sitere n'okike ígwè eme ihe dị ka ihe ndị na-ebute ụzọ iji mepụta fim ndị dị gịrịgịrị, si otú a na-enweta nnukwu mmepụta azụmahịa. Mgbe a na-akụ Ga2O3 site na iji usoro MOCVD, a na-ejikarị trimethylgallium (TMGa), triethylgallium (TEGa) na Ga (dipentyl glycol formate) eme ihe dị ka isi iyi Ga, ebe a na-eji H2O, O2 ma ọ bụ N2O dị ka isi iyi oxygen. Uto site na iji usoro a na-achọkarị okpomọkụ dị elu (>800°C). Teknụzụ a nwere ike iru obere mkpokọta ihe na-ebu ibu na mmegharị elektrọn dị elu na nke dị ala, yabụ ọ dị oke mkpa maka mmezu nke ngwaọrụ ike β-Ga2O3 dị elu. Ma e jiri ya tụnyere usoro uto MBE, MOCVD nwere uru nke inweta oke uto dị elu nke ihe nkiri β-Ga2O3 n'ihi njirimara nke uto okpomọkụ dị elu na mmeghachi omume kemịkalụ.

Ọgụgụ 7 β-Ga2O3 (010) onyonyo AFM

Foto nke 8 β-Ga2O3 Mmekọrịta dị n'etiti μ na mgbochi mpempe akwụkwọ nke Hall na okpomọkụ tụrụ

Usoro HVPE 2.3

HVPE bụ teknụzụ epitaxial tozuru okè ma ejirila ya mee ihe nke ukwuu n'uto epitaxial nke semiconductors compound III-V. A maara HVPE maka obere ọnụ ahịa mmepụta ya, ọnụego uto ngwa ngwa, na ọkpụrụkpụ ihe nkiri dị elu. Ọ dị mkpa ịmara na HVPEβ-Ga2O3 na-egosipụtakarị ọdịdị elu siri ike na nnukwu njupụta nke ntụpọ elu na olulu. Ya mere, a chọrọ usoro nhicha kemịkalụ na igwe tupu emepụta ngwaọrụ ahụ. Teknụzụ HVPE maka epitaxy β-Ga2O3 na-ejikarị GaCl na O2 gas dị ka ihe ndị na-ebute ụzọ iji kwalite mmeghachi omume okpomọkụ dị elu nke matrix β-Ga2O3 (001). Foto nke 9 na-egosi ọnọdụ elu na ọnụego uto nke ihe nkiri epitaxial dị ka ọrụ nke okpomọkụ. N'afọ ndị na-adịbeghị anya, Novel Crystal Technology Inc. nke Japan enwetawo nnukwu ihe ịga nke ọma azụmaahịa na HVPE homoepitaxial β-Ga2O3, yana ọkpụrụkpụ oyi akwa epitaxial nke 5 ruo 10 μm na nha wafer nke 2 na 4 sentimita. Tinyere nke ahụ, wafers homoepitaxial HVPE β-Ga2O3 nke dị μm 20 nke China Electronics Technology Group Corporation mepụtara abanyekwala n'ọkwa azụmaahịa.

Foto nke 9 Usoro HVPE β-Ga2O3

Usoro PLD 2.4

A na-ejikarị teknụzụ PLD eme ihe iji tinye ihe nkiri oxide dị mgbagwoju anya na heterostructures. N'oge usoro uto PLD, a na-ejikọ ike photon na ihe a na-achọ site na usoro mwepụ elektrọn. N'adịghị ka MBE, a na-emepụta ihe ndị sitere na PLD site na radieshon laser nwere ike dị oke elu (>100 eV) ma mesịa tinye ha na ihe na-ekpo ọkụ. Agbanyeghị, n'oge usoro iwepụ ihe, ụfọdụ ihe ndị nwere ike dị elu ga-emetụta elu ihe ahụ ozugbo, na-emepụta ntụpọ isi ma si otú a na-ebelata ịdị mma nke ihe nkiri ahụ. Dịka usoro MBE si dị, enwere ike iji RHEED nyochaa nhazi elu na ọdịdị nke ihe ahụ n'oge n'oge usoro nkwụnye PLD β-Ga2O3, na-enye ndị nchọpụta ohere inweta ozi uto nke ọma. A na-atụ anya na usoro PLD ga-eto ihe nkiri β-Ga2O3 nke na-eduzi nke ọma, na-eme ka ọ bụrụ ngwọta kọntaktị ohmic kachasị mma na ngwaọrụ ike Ga2O3.

Foto nke 10 Foto AFM nke Si doped Ga2O3

Usoro 2.5 MIST-CVD

MIST-CVD bụ teknụzụ dị mfe ma dị ọnụ ala maka uto fim. Usoro CVD a gụnyere mmeghachi omume nke ịgba ihe precursor atomized n'elu ihe dị n'ime ala iji nweta ebe a na-edebe fim dị gịrịgịrị. Agbanyeghị, ruo ugbu a, Ga2O3 nke e ji mist CVD akụọla ka nwere ezigbo ihe onwunwe eletriki, nke na-ahapụ nnukwu ohere maka mmezi na imeziwanye n'ọdịnihu.