CVDKupaka kwa SiCikukonzanso malire a njira zopangira semiconductor pamlingo wodabwitsa. Ukadaulo wopaka utoto wowoneka ngati wosavutawu wakhala yankho lofunikira pazovuta zazikulu zitatu za kuipitsidwa ndi tinthu tating'onoting'ono, dzimbiri lotentha kwambiri komanso kukokoloka kwa plasma popanga chip. Opanga zida zapamwamba za semiconductor padziko lonse lapansi adazilemba ngati ukadaulo wokhazikika pazida zam'badwo wotsatira. Ndiye, nchiyani chimapangitsa chovala ichi kukhala "zida zosawoneka" za kupanga chip? Nkhaniyi isanthula mozama mfundo zake zaukadaulo, ntchito zake zazikulu komanso zotsogola.
Ⅰ. Tanthauzo la zokutira za CVD SiC
Kupaka kwa CVD SiC kumatanthawuza gawo loteteza la silicon carbide (SiC) lomwe limayikidwa pagawo laling'ono ndi ndondomeko ya mankhwala a vapor deposition (CVD). Silicon carbide ndi gulu la silicon ndi kaboni, lomwe limadziwika ndi kuuma kwake kwakukulu, kutenthetsa kwambiri kwamafuta, kusakhazikika kwamankhwala komanso kukana kutentha kwambiri. Ukadaulo wa CVD ukhoza kupanga wosanjikiza waukhondo, wandiweyani komanso wofanana ndi SiC, ndipo ungakhale wogwirizana kwambiri ndi ma geometries ovuta. Izi zimapangitsa zokutira za CVD SiC kukhala zoyenera kwambiri pazofunsira zomwe sizingakwaniritsidwe ndi zida zachikhalidwe kapena njira zina zokutira.
Ⅱ. CVD ndondomeko ndondomeko
Chemical vapor deposition (CVD) ndi njira yosunthika yopangira yomwe imagwiritsidwa ntchito popanga zida zapamwamba, zolimba kwambiri. Mfundo yaikulu ya CVD imakhudza momwe ma precursors a mpweya pamwamba pa gawo lapansi latenthedwa kuti apange zokutira zolimba.
Nayi kusokoneza kosavuta kwa njira ya SiC CVD:
CVD ndondomeko ndondomeko chithunzi
1. Mawu oyamba: Gaseous precursors, makamaka silicon munali mpweya (mwachitsanzo, methyltrichlorosilane - MTS, kapena silane - SiH₄) ndi mpweya munali mpweya (mwachitsanzo, propane - C₃H₈), amalowetsedwa mu anachita chipinda.
2. Kutumiza gasi: Mipweya yam'mbuyoyi imayenda pamwamba pa gawo lapansi lotentha.
3. Adsorption: Mamolekyu otsogola amakokera pamwamba pa gawo lapansi lotentha.
4. Zomwe zimachitika pamtunda: Pa kutentha kwakukulu, mamolekyu a adsorbed amakumana ndi zochitika za mankhwala, zomwe zimapangitsa kuwonongeka kwa kalambulabwalo ndi kupanga filimu yolimba ya SiC. Zomwe zimapangidwanso zimatulutsidwa ngati mpweya.
5. Kutopa ndi kutopa: Zopangidwa ndi mpweya zimatuluka kuchokera pamwamba ndiyeno zimatuluka mchipindacho. Kuwongolera molondola kwa kutentha, kupanikizika, kuchuluka kwa mpweya wa gasi ndi ndende yotsatila ndizofunikira kuti mukwaniritse zomwe mukufuna mafilimu, kuphatikizapo makulidwe, chiyero, crystallinity ndi adhesion.
Ⅲ. Kugwiritsa Ntchito CVD SiC Coatings mu Semiconductor Processes
Zovala za CVD SiC ndizofunikira kwambiri popanga semiconductor chifukwa kuphatikiza kwawo kwapadera kwazinthu kumakwaniritsa mikhalidwe yoipitsitsa komanso zofunikira zaukhondo wazopanga. Amathandizira kukana dzimbiri za plasma, kuukira kwa mankhwala, ndi kupanga tinthu, zonse zomwe ndizofunikira kuti ziwonjezeke zokolola zamafuta ndi nthawi ya zida.
Zotsatirazi ndi zina zodziwika bwino za CVD SiC ndi zochitika zawo:
1. Plasma Etching Chamber ndi Focus Ring
Zogulitsa: CVD SiC TACHIMATA liners, showerheads, susceptors, ndi main mphete.
Kugwiritsa ntchito: Mu etching ya plasma, plasma yogwira ntchito kwambiri imagwiritsidwa ntchito pochotsa zinthu m'mipando. Zida zosakutidwa kapena zosalimba zimawonongeka mwachangu, zomwe zimapangitsa kuti tinthu tating'onoting'ono tiipitsidwe komanso kutsika pafupipafupi. CVD SiC zokutira ali kwambiri kukana aukali plasma mankhwala (mwachitsanzo, fluorine, chlorine, bromine plasmas), kuwonjezera moyo wa zigawo zikuluzikulu chipinda, ndi kuchepetsa tinthu m'badwo, amene mwachindunji kumawonjezera yopyapyala zokolola.
2.PECVD ndi HDPCVD zipinda
Zogulitsa: CVD SiC TACHIMATA zipinda anachita ndi maelekitirodi.
Mapulogalamu: Plasma enhanced chemical vapor deposition (PECVD) ndi high density plasma CVD (HDPCVD) amagwiritsidwa ntchito poyika mafilimu oonda (mwachitsanzo, zigawo za dielectric, passivation layers). Njirazi zimaphatikizaponso malo ovuta a plasma. Zovala za CVD SiC zimateteza makoma am'chipinda ndi maelekitirodi kuti asakokoloke, kuwonetsetsa kuti filimuyo ndi yabwino komanso kuchepetsa zolakwika.
3. Zida zoyika ion
Zogulitsa: CVD SiC yokutidwa ndi beamline zigawo zikuluzikulu (mwachitsanzo, apertures, Faraday makapu).
Mapulogalamu: Kuyika kwa ion kumayambitsa ma ion dopant mu magawo a semiconductor. Miyendo ya ayoni yamphamvu kwambiri imatha kuyambitsa kutulutsa ndi kukokoloka kwa zida zowonekera. Kuuma ndi kuyera kwakukulu kwa CVD SiC kumachepetsa kubadwa kwa tinthu kuchokera ku zigawo za beamline, kuteteza kuipitsidwa kwa zophika pa nthawi yovutayi.
4. Epitaxial riyakitala zigawo zikuluzikulu
Zogulitsa: CVD SiC TACHIMATA susceptors ndi ogawa gasi.
Mapulogalamu: Kukula kwa Epitaxial (EPI) kumaphatikizapo kukulitsa magawo a crystalline olamulidwa kwambiri pagawo laling'ono kutentha kwambiri. CVD SiC yokutidwa susceptors kupereka kwambiri matenthedwe bata ndi inertness mankhwala pa kutentha kwambiri, kuonetsetsa kutentha yunifolomu ndi kupewa kuipitsidwa kwa susceptor palokha, amene n'kofunika kwambiri kuti akwaniritse apamwamba epitaxial zigawo.
Pamene ma chip geometries akucheperachepera komanso kufunidwa kwa ma process kukukulirakulira, kufunikira kwa operekera zokutira a CVD SiC apamwamba kwambiri ndi opanga zokutira a CVD kukukulirakulira.
IV. Kodi zovuta za CVD SiC zokutira ndi zotani?
Ngakhale zabwino zambiri zokutira kwa CVD SiC, kupanga ndi kugwiritsa ntchito kwake kumakumananso ndi zovuta zina. Kuthetsa mavutowa ndi chinsinsi chokwaniritsa ntchito yokhazikika komanso yotsika mtengo.
Zovuta:
1. Kumamatira ku gawo lapansi
SiC ikhoza kukhala yovuta kuti ikwaniritse zomatira zamphamvu komanso zofananira kuzinthu zosiyanasiyana zapansi panthaka (mwachitsanzo, graphite, silicon, ceramic) chifukwa cha kusiyana kwa ma coefficients owonjezera amafuta ndi mphamvu yapamtunda. Kumamatira koyipa kungayambitse delamination panthawi yotentha ya njinga kapena kupsinjika kwamakina.
Zothetsera:
Kukonzekera pamwamba: Kuyeretsa mosamala ndikusamalira pamwamba (mwachitsanzo, etching, mankhwala a plasma) a gawo lapansi kuti achotse zowononga ndikupanga malo abwino kwambiri omangirira.
Interlayer: Ikani cholumikizira chocheperako komanso chosinthidwa mwamakonda kapena chosanjikiza (monga pyrolytic carbon, TaC - chofanana ndi zokutira za CVD TaC pamapulogalamu apadera) kuti muchepetse kusagwirizana kwakukula kwamafuta ndikulimbikitsa kumamatira.
Konzani magawo oyika: Yang'anirani mosamala kutentha kwa kutentha, kupanikizika, ndi gasi kuti mukwaniritse bwino komanso kukula kwa mafilimu a SiC ndikulimbikitsa mgwirizano wamphamvu pakati pa nkhope.
2. Kupsinjika kwa Mafilimu ndi Kusweka
Pakuyika kapena kuziziritsa kotsatira, kupsinjika kotsalira kumatha kuchitika mkati mwa makanema a SiC, kumayambitsa kusweka kapena kupindika, makamaka pazithunzi zazikulu kapena zovuta.
Zothetsera:
Kuwongolera Kutentha: Yang'anirani bwino kutentha ndi kuzizira kuti muchepetse kugwedezeka kwa kutentha ndi kupsinjika.
Kupaka kwa Gradient: Gwiritsani ntchito njira zokutira zama multilayer kapena gradient kuti musinthe pang'onopang'ono kapangidwe kazinthu kapena kapangidwe kazinthu kuti zigwirizane ndi kupsinjika.
Kusintha kwa Post-Deposition Annealing: Anneal zigawo zokutira kuti muchepetse kupsinjika kotsalira ndikuwongolera kukhulupirika kwa kanema.
3. Conformality ndi Kufanana pa Complex Geometries
Kuyika zokutira zolimba komanso zofananira pazigawo zokhala ndi mawonekedwe ovuta, mawonekedwe apamwamba, kapena ma tchanelo amkati kungakhale kovuta chifukwa cha malire pakufalikira kwa kalambulabwalo ndi ma kinetics.
Zothetsera:
Kusintha kwa Reactor Design: Design CVD reactors ndi wokometsedwa mpweya otaya mphamvu ndi kutentha yunifolomu kuonetsetsa yunifolomu kufalitsa precursors.
Kusintha kwa Parameter: Sinthani bwino kuyika kwamphamvu, kuthamanga kwa magazi, komanso kukhazikika kwa kalambulabwalo kuti muwonjezere kufalikira kwa gasi kukhala zinthu zovuta.
Multi-stage deposition: Gwiritsani ntchito masitepe osalekeza kapena zosintha zozungulira kuti muwonetsetse kuti zonse zakutidwa bwino.
V. FAQ
Q1: Kodi pali kusiyana kotani pakati pa CVD SiC ndi PVD SiC mu semiconductor ntchito?
A: Zovala za CVD ndizitsulo zamtundu wa kristalo ndi chiyero cha> 99.99%, choyenera kumadera a plasma; PVD zokutira nthawi zambiri amorphous / nanocrystalline ndi chiyero <99.9%, makamaka ntchito zokutira zokongoletsa.
Q2: Kodi kutentha kwakukulu ndi kotani komwe zokutira zimatha kupirira?
A: Kulekerera kwanthawi yochepa kwa 1650 ° C (monga njira yochepetsera), malire ogwiritsira ntchito nthawi yaitali a 1450 ° C, kupitirira kutentha kumeneku kudzachititsa kusintha kwa gawo kuchokera ku β-SiC kupita ku α-SiC.
Q3: Mtundu wa makulidwe amtundu wanji?
A: Semiconductor zigawo zambiri 80-150μm, ndi zokutira injini EBC akhoza kufika 300-500μm.
Q4: Kodi ndi zinthu ziti zomwe zimakhudza mtengo?
A: Precursor chiyero (40%), kugwiritsa ntchito mphamvu zamagetsi (30%), kutayika kwa zokolola (20%). Mtengo wa unit wa zokutira zapamwamba ukhoza kufika $5,000/kg.
Q5: Kodi ogulitsa padziko lonse lapansi ndi ati?
A: Europe ndi United States: CoorsTek, Mersen, Ionbond; Asia: Semixlab, Veteksemicon, Kallex (Taiwan), Scientech (Taiwan)
Nthawi yotumiza: Jun-09-2025