SiC Epitaxial Mbali

Zophimba Zapamwamba za CVD za Kukula kwa SiC Epitaxial

Zopangidwira zipangizo zamagetsi zamagetsi zamagetsi zomwe zimagwira ntchito pansi pa kutentha kwakukulu (1500°C - 1700°C), ma CVD SiC ndi ma planetary susceptors athu okhala ndi TaC, ma satellite disks, ndi ma gas deflectors amapangidwa kuti azigwira ntchito bwino. Zopangidwa kuti zipewe kupanga tinthu tating'onoting'ono, kuwonongeka kwa pamwamba, ndi kuphulika kwa mpweya wochita kusintha (H₂, SiH₄, C₃H∯), zophimba zathu zapamwamba zimatsimikizira kuti zimagwira ntchito nthawi yayitali, kuwongolera bwino kwambiri kwa dopant, komanso kufanana kwa makulidwe a filimu yonse.Ma wafer a SiC epitaxial a mainchesi 6 ndi mainchesi 8.

Kukhazikika kwa Kutentha Kwambiri

Kutentha kwake kumakhala kokhazikika mpaka 1700°C m'malo ovuta kwambiri ochepetsa H₂/silane.

Kufananiza kwa Gradient CTE

Zimathetsa kugawanika kwa utoto, kusweka pang'ono, komanso kusweka kwa utoto panthawi ya kutentha kwachangu.

Kukonzeka kwa Sikelo ya Wafer ya mainchesi 8

Makina opangira CNC olondola omwe amapangidwira ma reactors a SiC Epi a m'badwo wotsatira (LPE, Aixtron, Nuflare).

Chizindikiro chaukadaulo	Mtengo Wofotokozera	Njira Yoyenera / Yoyesera
Zosankha Zopangira Zinthu Zophimba	CVD SiC / Tantalum Carbide (TaC)	Chigawo Choyera Kwambiri Chopanda Chinyezi
Pansi pa Maziko	Graphite Yoyeretsedwa Yoyera	Kusayera Kwambiri < 5 ppm
Kukana Kugwedezeka kwa Kutentha	Delta T > 500°C Rate Rate	Palibe Kusweka / Kutuluka
Kukhwima kwa Pamwamba (Ra)	≤ 0.4 μm (Galasi Lopukutidwa)	Zimaletsa Kumamatira kwa Wafer & Tinthu