CVDSiCni ugusubiramo imipaka yimikorere ya semiconductor ku kigero gitangaje. Ubu buryo busa nuburyo bworoshye bwo gutwikira bwabaye igisubizo cyingenzi kubibazo bitatu byingenzi byanduza uduce duto, kwangirika kwubushyuhe bwo hejuru hamwe nisuri ya plasma mugukora chip. Uruganda rukora ibikoresho bya semiconductor ku isi rwashyize ku rutonde nk'ikoranabuhanga risanzwe ry'ibikoresho bizakurikiraho. None, niki gituma iyi shitingi "intwaro itagaragara" yo gukora chip? Iyi ngingo izasesengura byimazeyo amahame yayo ya tekiniki, ibyingenzi bikoreshwa hamwe niterambere rigezweho.
Ⅰ. Ibisobanuro bya CVD SiC
CVD SiC isobanura urwego rwo gukingira karubide ya silicon (SiC) yashyizwe kuri substrate hamwe nuburyo bwo kubika imyuka ya chimique (CVD). Carbide ya Silicon ni uruvange rwa silikoni na karubone, izwiho gukomera kwinshi, gutwara ubushyuhe bwinshi, kutagira imiti no kurwanya ubushyuhe bwinshi. Ubuhanga bwa CVD burashobora gukora ubuziranenge-bwuzuye, ubwinshi nuburinganire bumwe bwa SiC, kandi burashobora guhuza cyane na geometrike igoye. Ibi bituma CVD SiC yambara ikwiranye cyane no gusaba porogaramu zidashobora kuzuzwa nibikoresho gakondo cyangwa ubundi buryo bwo gutwikira.
Ⅱ. Ihame rya CVD
Imyuka ya chimique (CVD) nuburyo butandukanye bwo gukora bukoreshwa mugukora ibikoresho byiza cyane, bikora neza. Ihame shingiro rya CVD ririmo reaction ya gaze ya preursor hejuru yubutaka bushyushye kugirango ikore igifuniko gikomeye.
Dore uburyo bworoshye bwo gusenyuka kwa SiC CVD:
Igishushanyo mbonera cya CVD
1. Intangiriro.
2. Gutanga gaze: Iyi myuka ibanziriza imyuka hejuru yubushyuhe.
3. Kwiyongera: Precursor molekules adsorb hejuru yubushyuhe bushyushye.
4. Ubuso: Ku bushyuhe bwinshi, molekile ziyamamaza zikora imiti, bikaviramo kubora kwa preursor no gukora firime ikomeye ya SiC. Byproducts irekurwa muburyo bwa gaze.
5. Gusiba no kunanirwa: Gaseous byproducts desorb kuva hejuru hanyuma ikananirwa kuva mucyumba. Kugenzura neza ubushyuhe, umuvuduko, umuvuduko wa gazi hamwe nubushakashatsi bwibanze ni ingenzi kugirango ugere kubintu bya firime wifuza, harimo ubunini, ubuziranenge, kristu ndetse no gufatira hamwe.
Ⅲ. Imikoreshereze ya CVD SiC Coatings muri Semiconductor Processes
Imyenda ya CVD SiC ni ntangarugero mu gukora igice cya kabiri kuko guhuza kwabo kwihariye guhuza ibintu bikabije n’ibisabwa kugira ngo habeho isuku. Zongera imbaraga zo kurwanya ruswa, kwibasirwa n’imiti, no kubyara uduce duto, ibyo byose ni ingenzi cyane mu kongera umusaruro wafer n'ibikoresho igihe.
Ibikurikira nibisanzwe CVD SiC ibice bisize hamwe nibisabwa:
1. Urugereko rwa Plasma Etching hamwe nimpeta yibanze
Ibicuruzwa: CVD SiC yatwikiriye imirongo, kwiyuhagira, suseptors, hamwe nimpeta yibanze.
Gusaba: Muri plasma yogukora, plasma ikora cyane ikoreshwa muguhitamo gukuramo ibikoresho muri wafers. Ibikoresho bidafunze cyangwa bitaramba byangirika vuba, bikaviramo kwanduza uduce no gutaha kenshi. Imyenda ya CVD SiC ifite imbaraga zo kurwanya imiti ikaze ya plasma (urugero, fluorine, chlorine, plasmas ya bromine), ikongerera ubuzima bwibice byingenzi bigize urugereko, kandi ikagabanya kubyara ibice, byongera umusaruro wafer.
Ibyumba bya PECVD na HDPCVD
Ibicuruzwa: CVD SiC yubatswe ibyumba bya reaction na electrode.
Porogaramu. Izi nzira zirimo kandi plasma ikaze ibidukikije. CVD SiC ikingira ikingira urukuta rwa chambre na electrode isuri, bigatuma ireme rya firime rihoraho kandi rigabanya inenge.
3. Ibikoresho byo gutera Ion
Ibicuruzwa: CVD SiC yatwikiriye ibice bya beamline (urugero, aperture, ibikombe bya Faraday).
Porogaramu: Gutera Ion kwinjiza dopant ion muri semiconductor substrates. Imirasire yingufu nyinshi ion irashobora gutera guhindagurika no gutwarwa nibice byagaragaye. Ubukomezi nubuziranenge bwa CVD SiC bigabanya kubyara ibice biva kumurongo, bikarinda kwanduza wafer muri iyi ntambwe ikomeye.
4. Ibice bya reaction ya Epitaxial
Ibicuruzwa: CVD SiC yatwikiriye suseptors hamwe nogukwirakwiza gaze.
Porogaramu: Gukura Epitaxial (EPI) bikubiyemo gukura cyane kuri kristaline itondekanye cyane kuri substrate ku bushyuhe bwinshi. Indwara ya CVD SiC itanga ubushyuhe buhebuje hamwe nubushuhe bwimiti mubushyuhe bwinshi, bigatuma ubushyuhe bumwe kandi birinda kwanduza suseptor ubwayo, ibyo bikaba ari ngombwa kugirango umuntu agere ku rwego rwo hejuru.
Mugihe chip geometrie igabanuka kandi nibisabwa bikarushaho kwiyongera, ibyifuzo byabatanga ibicuruzwa byiza bya CVD SiC hamwe nabakora CVD bitwikiriye bikomeje kwiyongera.
IV. Ni izihe mbogamizi ziterwa na CVD SiC?
Nubwo ibyiza byinshi byo gutwikira CVD SiC, kuyikora no kuyikoresha biracyafite ibibazo byingendo. Gukemura ibyo bibazo nurufunguzo rwo kugera kumikorere ihamye no gukora neza.
Inzitizi:
1. Gufatanya na substrate
SiC irashobora kuba ingorabahizi kugirango umuntu agere ku bikoresho bikomeye byo mu bwoko bwa substrate (urugero, grafite, silikoni, ceramique) kubera itandukaniro riri hagati ya coefficient zo kwagura ubushyuhe ningufu zubutaka. Gufata nabi birashobora gutuma umuntu asibangana mugihe cyamagare yumuriro cyangwa guhangayika.
Ibisubizo:
Gutegura ubuso: Isuku ryitondewe no kuvura hejuru (urugero, gutobora, kuvura plasma) ya substrate kugirango ikureho umwanda kandi ikore ubuso bwiza bwo guhuza.
Interlayer: Shyiramo interlayer yoroheje kandi yihariye (urugero, karubone pyrolytike, TaC - isa na CVD TaC itwikiriye mubisabwa byihariye) kugirango ugabanye kwaguka kwinshi no guteza imbere.
Hindura ibipimo byo kubitsa: Kugenzura witonze ubushyuhe bwo kubitsa, umuvuduko, hamwe na gaze kugirango uhindure nucleation niterambere rya firime ya SiC no guteza imbere guhuza imiyoboro ikomeye.
2. Guhangayikishwa na firime
Mugihe cyo gushira cyangwa gukonjesha nyuma, guhangayika gusigaye birashobora gutera imbere muri firime ya SiC, bigatera gucika cyangwa guturika, cyane cyane kuri geometrike nini cyangwa igoye.
Ibisubizo:
Kugenzura Ubushyuhe: Kugenzura neza igipimo cyo gushyushya no gukonjesha kugirango ugabanye ubushyuhe nubushyuhe.
Gradient Coating: Koresha uburyo bwinshi cyangwa buhoro buhoro kugirango uhindure buhoro buhoro ibintu cyangwa imiterere kugirango uhuze imihangayiko.
Inyuma ya Depozisiyo: Shyira ibice bisize kugirango ukureho imihangayiko isigaye kandi utezimbere ubudakemwa bwa film.
3. Guhuza no Guhuza Kuri Geometrike igoye
Kubitsa umwenda mwinshi kandi uhuza ibice bifite imiterere igoye, ibipimo bihanitse, cyangwa imiyoboro y'imbere birashobora kugorana kubera imbogamizi zo gukwirakwizwa kwa preursor hamwe na kinetics.
Ibisubizo:
Igishushanyo mbonera cya reaction.
Guhindura Parameter Guhindura: Umuvuduko mwiza wo gushira, umuvuduko wikigereranyo, hamwe nubushakashatsi bwibanze kugirango wongere ikwirakwizwa rya gaze mubintu bigoye.
Ibyiciro byinshi: Koresha intambwe zihoraho zo kubitsa cyangwa kuzunguruka kugirango umenye neza ko ubuso bwose busize neza.
V. Ibibazo
Q1: Ni irihe tandukaniro ryibanze riri hagati ya CVD SiC na PVD SiC mubikorwa bya semiconductor?
Igisubizo: CVD itwikiriye ni inkingi ya kristu yubatswe ifite ubuziranenge bwa> 99,99%, ibereye ibidukikije bya plasma; Imyenda ya PVD ahanini ni amorphous / nanocrystalline ifite ubuziranenge bwa <99.9%, ikoreshwa cyane cyane mu gushushanya.
Q2: Ni ubuhe bushyuhe ntarengwa bushobora gutwikirwa?
Igisubizo: Kwihanganira igihe gito cya 1650 ° C (nka annealing process), igihe kirekire cyo gukoresha 1450 ° C, kurenza ubu bushyuhe bizatera icyiciro kuva kuri β-SiC kugera α-SiC.
Q3: Ubunini busanzwe bwo gutwikira?
Igisubizo: Igice cya Semiconductor ahanini ni 80-150 mm, kandi moteri yindege EBC ishobora kugera kuri 300-500 mm.
Q4: Nibihe bintu byingenzi bigira ingaruka kubiciro?
Igisubizo: Isuku yambere (40%), ibikoresho bikoresha ingufu (30%), gutakaza umusaruro (20%). Igiciro cyibikoresho byo murwego rwohejuru birashobora kugera $ 5,000 / kg.
Q5: Nibihe bintu nyamukuru bitanga isi?
Igisubizo: Uburayi na Amerika: CoorsTek, Mersen, Ionbond; Aziya: Semixlab, Veteksemicon, Kallex (Tayiwani), Scientech (Tayiwani)
Igihe cyo kohereza: Jun-09-2025