Ingaruka z'ubushyuhe butandukanye ku mikurire y'ubushyuhe bwa CVD SiC

Igipfunyika cya CVD SiC ni iki?

Gushyira umwuka mu kirere (CVD) ni uburyo bwo gushyira umwuka mu kirere bukoreshwa mu gukora ibikoresho bikomeye bifite isuku nyinshi. Ubu buryo bukunze gukoreshwa mu nganda zikora ibikoresho bya semiconductor kugira ngo hakorwe uduce duto ku buso bwa wafers. Mu gihe cyo gutegura carbide ya silikoni na CVD, substrate ihura n'ikintu kimwe cyangwa byinshi bihinduka, bigakora ku buso bwa substrate kugira ngo bishyiremo ububiko bwa carbide ya silikoni. Mu buryo bwinshi bwo gutegura ibikoresho bya silikoni, ibicuruzwa byateguwe hakoreshejwe ububiko bw'umwuka bifite imiterere ingana kandi isuku, kandi ubu buryo bufite ubushobozi bwo kugenzura imikorere. Ibikoresho bya CVD silicon carbide bifite uruvange rwihariye rw’imiterere myiza y’ubushyuhe, amashanyarazi n’ibinyabutabire, bigatuma biba byiza cyane gukoreshwa mu nganda za semiconductor aho ibikoresho bifite imikorere myiza bikenewe. Ibice bya CVD silicon carbide bikoreshwa cyane mu bikoresho byo gushushanya, ibikoresho bya MOCVD, ibikoresho bya Si epitaxial n’ibikoresho bya SiC epitaxial, ibikoresho byo gutunganya ubushyuhe bwihuse n’ibindi bikoresho.

Iyi nkuru yibanda ku gusesengura ubwiza bwa filimi ntoya zahinzwe ku bushyuhe butandukanye mu gihe cyo guteguraIgipfukisho cya CVD SiC, kugira ngo hamenyekane ubushyuhe bukwiye bw'imikorere. Igerageza rikoresha grafiti nk'umusemburo na trichloromethylsilane (MTS) nk'umwuka uturuka ku ihinduka ry'imikorere. Irangi rya SiC rishyirwa mu buryo bwa CVD bufite umuvuduko muto, hamwe na mikoromorphologiya yaIgipfukisho cya CVD SiCigaragara hakoreshejwe mikorosikopi ya elegitoroniki kugira ngo isuzume imiterere yayo.

Kubera ko ubushyuhe bw'ubuso bw'icyuma gikozwe muri grafiti buri hejuru cyane, umwuka uri hagati uzakurwamo ukavanwa ku butaka bw'icyuma, amaherezo C na Si bisigaye ku butaka bw'icyuma bizarema SiC ikomeye kugira ngo bikore SiC. Dukurikije uburyo bwo gukura bwa CVD-SiC bwavuzwe haruguru, bigaragara ko ubushyuhe buzagira ingaruka ku gukwirakwira kwa gazi, kubora kwa MTS, kuremwa kw'ibitonyanga no kuvamo no gusohora gazi iri hagati, bityo ubushyuhe bwo kuvamo gazi buzagira uruhare runini mu miterere ya SiC. Imiterere ya microscopic y'icyuma ni yo igaragaza neza ubucucike bw'icyuma gikozwe muri microscope. Kubwibyo, ni ngombwa kwiga ingaruka z'ubushyuhe butandukanye bwo kuvamo gazi ku miterere ya microscopic y'icyuma gikozwe muri CVD SiC. Kubera ko MTS ishobora kubora no gushyira SiC coatings hagati ya 900 ~ 1600℃, iri gerageza ryatoranyije ubushyuhe butanu bwo gushyiramo 900℃, 1000℃, 1100℃, 1200℃ na 1300℃ kugira ngo hategurwe SiC coatings kugira ngo higwe ingaruka z'ubushyuhe ku gipfundikizo cya CVD-SiC. Ibipimo byihariye bigaragazwa mu mbonerahamwe ya 3. Ishusho ya 2 igaragaza imiterere mito cyane ya CVD-SiC coatings ikura ku bushyuhe butandukanye bwo gushyiramo.

Iyo ubushyuhe bwo gushyiramo ibintu bugeze kuri dogere 900°C, SiC yose ikura ikaba fibre. Bigaragara ko umurambararo wa fibre imwe ari hafi 3.5μm, kandi igipimo cyayo kiri hafi 3 (<10). Byongeye kandi, igizwe n'uduce duto twa nano-SiC tutabarika, bityo ikaba iri mu miterere ya SiC ya polycrystalline, itandukanye n'insinga za SiC zisanzwe n'udupira twa SiC tw'ikirahure kimwe. Iyi SiC y'ikirahure ni inenge y'imiterere iterwa n'ibipimo by'imikorere idafite ishingiro. Bigaragara ko imiterere y'iyi coat ya SiC irekuye, kandi hari umubare munini w'imyenge hagati ya SiC y'ikirahure, kandi ubucucike ni buke cyane. Kubwibyo, ubu bushyuhe ntibukwiriye mu gutegura coat ya SiC ikomeye. Ubusanzwe, inenge z'imiterere ya SiC y'ikirahure ziterwa n'ubushyuhe buke cyane bwo gushyiramo ibintu. Ku bushyuhe buke, molekile nto zihambiriye ku buso bwa substrate zifite ingufu nke kandi ubushobozi bwo kwimuka buke. Kubwibyo, molekile nto zikunda kwimuka no gukura zikagera ku ngufu nke cyane zidafite ubuso bwa SiC (nk'isonga ry'ingano). Gukura mu cyerekezo gihoraho amaherezo bitera inenge z’imiterere ya SiC.

Gutegura irangi rya CVD SiC:

Ubwa mbere, icyuma cya grafiti gishyirwa mu itanura rishyushye cyane kandi rigashyirwa kuri 1500°C mu gihe cy'isaha 1 mu kirere cya Ar kugira ngo gikureho ivu. Hanyuma icyuma cya grafiti gicibwamo icyuma cya 15x15x5mm, hanyuma ubuso bw'icyuma cya grafiti bugasukurwa n'impapuro za sandpaper za 1200-mesh kugira ngo hakurweho imyenge y'ubuso igira ingaruka ku ipfundo rya SiC. Ikigo cya grafiti cyavuwe gisukurwa na ethanoli n'amazi yaciwe, hanyuma kigashyirwa mu itanura kuri 100°C kugira ngo cyumishwe. Amaherezo, icyuma cya grafiti gishyirwa mu gace k'ubushyuhe bw'itanura ry'umuyoboro kugira ngo gishyire SiC. Ishusho y'icyitegererezo cy'uburyo bwo gushyiramo umwuka wa shimi igaragara ku Ishusho ya 1.

ItsindaIgipfukisho cya CVD SiCbyagaragaye hakoreshejwe mikorosikope ya elegitoroniki kugira ngo harebwe ingano y'uduce twayo n'ubucucike bwayo. Byongeye kandi, igipimo cyo gushyiramo SiC coating cyabazwe hakurikijwe formula ikurikira: VSiC = (m2-m1) / (Sxt) x100% VSiC = Igipimo cyo gutanga amafaranga; m2–uburemere bw'icyitegererezo cyo gusiga (mg); m1–uburemere bw'umubumbe (mg); Ubuso bwa S-ubuso bw'ubutaka (mm2); t-igihe cyo gutanga amakuru (h).   CVD-SiC iragoye cyane, kandi inzira ishobora gusobanurwa muri make ku buryo bukurikira: mu bushyuhe bwinshi, MTS izahinduka ubushyuhe kugira ngo ikore molekile nto zikomoka kuri karuboni n'izikomoka kuri silikoni. Molekile nto zikomoka kuri karuboni zirimo ahanini CH3, C2H2 na C2H4, naho molekile nto zikomoka kuri silikoni zirimo cyane cyane SiCI2, SiCI3, n'izindi; izo molekile nto zikomoka kuri karuboni n'izikomoka kuri silikoni zizajyanwa ku buso bwa graphite na gaze itwara na gaze ivamo umwuka, hanyuma izo molekile nto zizashyirwa ku buso bwa substrate mu buryo bwo kunyuzwamo umwuka, hanyuma hazabaho ingaruka za shimi hagati ya molekile nto kugira ngo habeho udutonyanga duto dukura buhoro buhoro, kandi udutonyanga natwo tuzahurira hamwe, kandi igisubizo kizaherekezwa no kurema ibikomoka ku bimera biri hagati (gaze ya HCl); Iyo ubushyuhe buzamutse bukagera kuri 1000 ℃, ubucucike bw'igitambaro cya SiC burarushaho kuba bwiza. Bigaragara ko igice kinini cy'igitambaro kigizwe n'uduce twa SiC (tungana na 4μm), ariko hari n'udukoko twa SiC dufite fibrous, bigaragaza ko hakiri ukwiyongera kwa SiC kuri ubu bushyuhe, kandi igitambaro ntikiba kinini bihagije. Iyo ubushyuhe buzamutse bukagera kuri 1100 ℃, bigaragara ko igitambaro cya SiC gifite ubucucike bwinshi cyane, kandi udukoko twa SiC dufite fibrous tuba twarashize burundu. Igitambaro kigizwe n'uduce twa SiC dufite ishusho y'ibitonyanga dufite umurambararo wa 5 ~ 10μm, dufatanye cyane. Ubuso bw'uduce ni bubi cyane. Bugizwe n'udukoko twa SiC tutabarika. Mu by'ukuri, inzira yo gukura ya CVD-SiC kuri 1100 ℃ yagenzuwe n'ubwikorezi bw'ibintu. Uduce duto twinjizwa ku buso bw'ubutaka dufite ingufu n'igihe gihagije cyo gukura no gukura tukaba uduce twa SiC. Udukoko twa SiC dukora ibitonyanga binini. Mu gihe cy’ingufu zo hejuru, ibitonyanga byinshi bisa n’ibizunguruka, kandi ibitonyanga bihuzwa neza bigahinduka umwambaro munini wa SiC. Iyo ubushyuhe bugeze kuri 1200℃, igishishwa cya SiC nacyo kiba cyuzuye, ariko imiterere ya SiC iba myinshi kandi ubuso bw'igishishwa bugaragara nk'ubukomeye. Iyo ubushyuhe bwiyongereye bukagera kuri 1300℃, umubare munini w'uduce dusanzwe tw'umuzenguruko dufite umurambararo wa 3μm uboneka ku buso bwa graphite substrate. Ibi biterwa nuko kuri ubu bushyuhe, SiC yahinduwemo nucleation ya gaze phase, kandi igipimo cyo kubora kwa MTS kiba cyihuta cyane. Molekile nto zagize uruhare mu gukora uduce twa SiC mbere yuko twinjira ku buso bwa substrate. Nyuma y'uko uduce dukoze uduce tw'umuzenguruko, tuzagwa munsi, amaherezo bigatuma uduce twa SiC ducika kandi dufite ubucucike buke. Birumvikana ko 1300℃ idashobora gukoreshwa nk'ubushyuhe bwo gukora igishishwa cya SiC cyuzuye. Igereranya ryimbitse ryerekana ko niba igishishwa cya SiC cyuzuye kigomba gutegurwa, ubushyuhe bwiza bwo gushyiramo CVD ni 1100℃.

Ishusho ya 3 igaragaza igipimo cyo gushyiramo irangi rya CVD SiC ku bushyuhe butandukanye bwo gushyiramo. Uko ubushyuhe bwo gushyiramo irangi ryiyongera, igipimo cyo gushyiramo irangi rya SiC kigenda kigabanuka buhoro buhoro. Igipimo cyo gushyiramo irangi kuri 900°C ni 0.352 mg·h-1/mm2, kandi gukura kw'imigozi mu cyerekezo bituma habaho igipimo cyo gushyiramo irangi ryihuta cyane. Igipimo cyo gushyiramo irangi rifite ubucucike bwinshi ni 0.179 mg·h-1/mm2. Bitewe n'uko hari ibice bimwe na bimwe bya SiC bishyirwamo, igipimo cyo gushyiramo irangi kuri 1300°C ni cyo gito cyane, ni 0.027 mg·h-1/mm2 gusa.   Umwanzuro: Ubushyuhe bwiza bwo gushyiramo CVD ni 1100°C. Ubushyuhe buke butera gukura kwa SiC mu cyerekezo, mu gihe ubushyuhe bwinshi butuma SiC ikuramo umwuka bigatuma habaho gutwikira guke. Uko ubushyuhe bwo gushyiramo umwuka bwiyongera, igipimo cyo gushyiramo umwuka cyaIgipfukisho cya CVD SiCigabanuka buhoro buhoro.