Niki CVD SiC?
Imyuka ya chimique (CVD) nuburyo bwo kubika vacuum ikoreshwa mugutanga ibikoresho bikomeye-bifite isuku. Ubu buryo bukoreshwa kenshi murwego rwo gukora semiconductor murwego rwo gukora firime yoroheje hejuru ya wafer. Muburyo bwo gutegura karbide ya silicon na CVD, substrate ihura na prursor imwe cyangwa nyinshi zihindagurika, zifata imiti hejuru yubutaka kugirango zibike ububiko bwa karibide ya silicon. Muburyo bwinshi bwo gutegura ibikoresho bya karubide ya silicon, ibicuruzwa byateguwe nubumara bwimyuka ya chimique bifite uburinganire nubuziranenge, kandi ubu buryo bufite uburyo bukomeye bwo kugenzura ibintu. CVD silicon carbide ibikoresho bifite ihuza ryihariye ryumuriro mwiza, amashanyarazi na chimique, bigatuma bikoreshwa cyane mugukoresha inganda za semiconductor aho hakenewe ibikoresho byiza cyane. Ibikoresho bya CVD silicon karbide bikoreshwa cyane mubikoresho byo gutobora, ibikoresho bya MOCVD, ibikoresho bya epitaxial Si nibikoresho bya epitaxial SiC, ibikoresho byo gutunganya ubushyuhe bwihuse nizindi nzego.
Iyi ngingo yibanze ku gusesengura ubuziranenge bwa firime yoroheje ikura ku bushyuhe butandukanye mu gihe cyo guteguraCVD SiC, kugirango uhitemo ubushyuhe bukwiye. Ubushakashatsi bukoresha grafite nka substrate na trichloromethylsilane (MTS) nka gaze ya reaction. Igicapo cya SiC cyashyizwe mubikorwa byumuvuduko ukabije wa CVD, hamwe na micromorphologie yaCVD SiCiraboneka mugusikana electron microscopi kugirango isesengure ubwinshi bwimiterere.
Kuberako ubushyuhe bwubuso bwa grafite substrate ari hejuru cyane, gaze yo hagati izasibanganywa kandi ikarekurwa hejuru yubutaka, hanyuma amaherezo C na Si bisigaye hejuru yubutaka bizakora icyiciro gikomeye SiC kugirango kibe igifuniko cya SiC. Ukurikije gahunda yo gukura kwa CVD-SiC yavuzwe haruguru, birashobora kugaragara ko ubushyuhe buzagira ingaruka ku ikwirakwizwa rya gaze, kubora kwa MTS, gushiraho ibitonyanga no gutembera no gusohora gaze hagati, bityo ubushyuhe bwo kubitsa bukagira uruhare runini muri morfologiya yo gutwikira SiC. Microscopique morphologie ya coating nigaragaza cyane muburyo bwo kwerekana ubucucike. Niyo mpamvu, birakenewe kwiga ingaruka zubushyuhe butandukanye bwimiterere kuri microscopique morphologie ya CVD SiC. Kubera ko MTS ishobora kubora no kubitsa igifuniko cya SiC hagati ya 900 ~ 1600 ℃, ubu bushakashatsi butoranya ubushyuhe butanu bwo kubika bwa 900 ℃, 1000 ℃, 1100 ℃, 1200 ℃ na 1300 ℃ kugirango hategurwe igicapo cya SiC kugirango bige ku ngaruka zubushyuhe kuri CVD-SiC. Ibipimo byihariye bigaragara mu mbonerahamwe ya 3. Igishushanyo cya 2 cyerekana microscopique morphologie ya CVD-SiC ikingira ikura ku bushyuhe butandukanye.
Iyo ubushyuhe bwo kubitsa ari 900 ℃, SiC yose ikura muburyo bwa fibre. Birashobora kugaragara ko diameter ya fibre imwe igera kuri 3,5 mm, naho igipimo cyayo kikaba hafi 3 (<10). Byongeye kandi, igizwe nuduce twinshi twa nano-SiC, bityo rero ni iyubatswe na polycrystalline SiC, itandukanye na nanowire gakondo ya SiC hamwe na kirisiti imwe ya kirisiti ya SiC. Iyi fibrous SiC ni inenge yimiterere iterwa nibintu bidafite ishingiro. Birashobora kugaragara ko imiterere yiyi shitingi ya SiC isa naho irekuye, kandi hariho umubare munini wimyenge hagati ya fibrous SiC, kandi ubucucike buri hasi cyane. Kubwibyo, ubu bushyuhe ntibukwiriye gutegurwa neza. Mubisanzwe, inenge ya fibrous SiC iterwa nubushyuhe buke cyane. Ku bushyuhe buke, molekile ntoya yamamajwe hejuru ya substrate ifite imbaraga nke nubushobozi buke bwo kwimuka. Kubwibyo, molekile ntoya ikunda kwimuka no gukura kugera kubutaka bwo hasi bwubusa bwimbuto za SiC (nk'isonga ry'ingano). Gukura kwicyerekezo gikomeza amaherezo ya fibrous SiC inenge zubatswe.
Gutegura CVD SiC Coating:
Ubwa mbere, igishushanyo mbonera cya grafite gishyirwa mu itanura ry’ubushyuhe bwo hejuru kandi rikabikwa kuri 1500 ℃ kuri 1h mu kirere cya Ar kugirango gikureho ivu. Hanyuma igishushanyo cya grafite gicibwa mubice bya 15x15x5mm, kandi hejuru yikibanza cya grafite gisizwe hamwe na 1200-mesh sandpaper kugirango ikureho imyenge yo hejuru igira ingaruka kumitsi ya SiC. Igice cya grafite cyavuwe cyogejwe hamwe na etanol ya anhydrous n'amazi yatoboye, hanyuma bigashyirwa mu ziko kuri 100 ℃ kugirango byumuke. Hanyuma, igishushanyo mbonera cya grafite gishyirwa mubice by'ubushyuhe bukuru bw'itanura rya tubari kugirango bishire SiC. Igishushanyo mbonera cya sisitemu yo kubika imyuka ya shimi irerekanwa mu gishushanyo 1.
UwitekaCVD SiCbyarebwaga no gusikana microscopi ya electron kugirango isesengure ubunini bwayo n'ubucucike bwayo. Byongeye kandi, igipimo cyo kubitsa cya SiC cyabazwe ukurikije formula ikurikira: VSiC = (m2-m1) / (Sxt) x100% VSiC = Igipimo cyo kubitsa; m2 - ubwinshi bw'icyitegererezo (mg); m1 - misa ya substrate (mg); Ubuso bwa S-ubuso bwa substrate (mm2); t-igihe cyo kubitsa (h). CVD-SiC iragoye cyane, kandi inzira irashobora kuvunagurwa muburyo bukurikira: ku bushyuhe bwinshi, MTS izangirika yubushyuhe kugirango ibe isoko ya karubone na molekile ntoya ya silikoni. Inkomoko ya karubone ntoya cyane irimo CH3, C2H2 na C2H4, hamwe na silicon isoko ya molekile ntoya cyane irimo SiCI2, SiCI3, nibindi.; ayo masoko ya karubone hamwe na silicon isoko ya molekile ntoya noneho izajyanwa hejuru yubutaka bwa grafitike na gaze itwara na gaze ya diluent, hanyuma izo molekile ntoya zizashyirwa hejuru yubutaka bwa substrate muburyo bwa adsorption, hanyuma reaction ya chimique izabera hagati ya molekile nto kugirango ibe ibitonyanga bito bikura buhoro buhoro, kandi ibitonyanga na byo bizajyana no gushinga hamwe na HCL; Iyo ubushyuhe buzamutse bugera kuri 1000 ℃, ubucucike bwa SiC butera imbere cyane. Birashobora kugaragara ko ibyinshi mubifuniko bigizwe nintete za SiC (hafi 4mm z'ubunini), ariko inenge zimwe na zimwe za fibrous SiC nazo ziraboneka, ibyo bikaba byerekana ko hakiriho iterambere ryerekezo rya SiC kuri ubu bushyuhe, kandi igifuniko ntikiri cyinshi bihagije. Iyo ubushyuhe buzamutse bugera kuri 1100 ℃, birashobora kugaragara ko igifuniko cya SiC ari cyinshi, kandi inenge ya fibrous SiC yazimye burundu. Ipitingi igizwe nuduce duto twa SiC tumeze nka diametre ya 5 ~ 10μm, ihujwe cyane. Ubuso bwibice birakabije. Igizwe nintete zitabarika nano-nini ya SiC. Mubyukuri, gahunda yo gukura ya CVD-SiC kuri 1100 ℃ yahindutse ihererekanyabubasha. Molekile ntoya yamamajwe hejuru ya substrate ifite imbaraga nigihe gihagije cyo gukomera no gukura mubinyampeke bya SiC. Ibinyampeke bya SiC bigira kimwe gitonyanga kinini. Mubikorwa byingufu zubuso, ibyinshi mubitonyanga bigaragara nkuburinganire, kandi ibitonyanga byahujwe cyane kugirango bibeho igicucu cya SiC. Iyo ubushyuhe buzamutse bugera kuri 1200 ℃, igifuniko cya SiC nacyo ni cyinshi, ariko morphologie ya SiC ihinduka impande nyinshi kandi hejuru yubuso bugaragara nabi. Iyo ubushyuhe bwiyongereye kugera kuri 1300 ℃, umubare munini wibice bisanzwe bya serefegitura bifite umurambararo wa 3μm uboneka hejuru yubutaka bwa grafite. Ni ukubera ko kuri ubu bushyuhe, SiC yahinduwe gaze nucleaire, kandi igipimo cya MTS cyihuta cyane. Molekile ntoya yaritwaye kandi ihinduranya kugirango ibe ibinyampeke bya SiC mbere yuko byerekanwa hejuru yubutaka. Ibinyampeke bimaze gukora uduce duto, bizagwa munsi, amaherezo bikavamo uduce duto twa SiC dufunze hamwe n'ubucucike bubi. Biragaragara, 1300 ℃ ntishobora gukoreshwa nkubushyuhe bwubushyuhe bwa SiC yuzuye. Kugereranya kwuzuye byerekana ko niba igicucu cya SiC cyuzuye kigomba gutegurwa, ubushyuhe bwiza bwa CVD ni 1100 ℃.
Igishushanyo cya 3 cyerekana igipimo cyo guta kwa CVD SiC ku bushyuhe butandukanye. Mugihe ubushyuhe bwokwiyongera bwiyongera, igipimo cyo gushira cya SiC gitwikiriye buhoro buhoro. Igipimo cyo kubitsa kuri 900 ° C ni 0.352 mg · h-1 / mm2, kandi gukura kwicyerekezo cya fibre kuganisha ku gipimo cyihuta cyane. Igipimo cyo kubitsa hamwe nubucucike buri hejuru ni 0.179 mg · h-1 / mm2. Bitewe no guta ibice bimwe bya SiC, igipimo cyo kohereza kuri 1300 ° C nicyo cyo hasi cyane, 0.027 mg · h-1 / mm2 gusa. Umwanzuro: Ubushyuhe bwiza bwa CVD ni 1100 ℃. Ubushyuhe buke buteza imbere icyerekezo cya SiC, mugihe ubushyuhe bwinshi butera SiC kubyara imyuka kandi bikavamo gutwikira gake. Hamwe no kwiyongera k'ubushyuhe bwo kubitsa, igipimo cyo kubitsa cyaCVD SiCgahoro gahoro.
Igihe cyo kohereza: Gicurasi-26-2025