Gusiga TaC Coating ni iki?

Mu nganda zikora ibikoresho bya semiconductor zigenda zihinduka vuba, ibikoresho byongera imikorere, kuramba, no gukora neza ni ingenzi cyane. Kimwe mu bishya nk'ibi ni Tantalum Carbide (TaC) coating, urwego rwo hejuru rwo kurinda ibikoresho bya grafiti. Iyi blog irasuzuma ibisobanuro bya TaC coating, ibyiza bya tekiniki, n'ikoreshwa ryayo mu guhindura ibintu mu nganda zikora semiconductor.

Ⅰ. Gusiga TaC Coating ni iki?

Igishishwa cya TaC ni urwego rwo hejuru rwa ceramic rugizwe na tantalum carbide (ikivange cya tantalum na carbone) gishyirwa ku buso bwa grafiti. Igishishwa gikoreshwa mu buryo bwa Chemical Vapor Deposition (CVD) cyangwa Physical Vapor Deposition (PVD), bigatuma habaho uruzitiro rukomeye kandi rusukuye cyane rurinda grafiti mu bihe bikomeye.

Imiterere y'ingenzi ya TaC Coating

●Guhagarara neza mu bushyuhe bwinshi: Ihangana n'ubushyuhe burenga 2200°C, ikaba irusha ibikoresho gakondo nka silicon carbide (SiC), igabanuka ikarenga 1600°C.

●Ubudahangarwa bw'ibinyabutabire: Irwanya ingese ituruka kuri hydrogen (H₂), ammonia (NH₃), silicon vapors, n'ibyuma bishongeshejwe, ikaba ari ingenzi cyane mu gutunganya ibikoresho bya semiconductor.

●Ubuziranenge Buhanitse Cyane: Igipimo cy'umwanda kiri munsi ya 5 ppm, bigabanya ibyago byo kwandura mu mikurire y'amakristale.

●Kuramba kw'ubushyuhe n'imikorere ya mashini: Gufatana cyane na grafiti, kwaguka guke k'ubushyuhe (6.3 × 10⁻⁶ / K), no gukomera (~2000 HK) bitanga igihe kirekire mu gihe cy'ubushyuhe.

Ⅱ. Gusiga TaC Coating mu Nganda za Semiconductors: Ikoreshwa ry'ingenzi

Ibice bya grafiti bitwikiriwe na TaC ni ingenzi cyane mu gukora semiconductor igezweho, cyane cyane ku bikoresho bya silicon carbide (SiC) na gallium nitride (GaN). Dore ingero z'ingenzi zikoreshwa muri byo:

1. Gukura kwa SiC Single Crystal

Uduce twa SiC ni ingenzi cyane ku bikoresho by'ikoranabuhanga bikoresha ingufu n'ibinyabiziga bikoresha amashanyarazi. Ibikoresho bya grafiti bya TaC bikoreshwa muri sisitemu yo gutwara umwuka ushyushye (PVT) na CVD (HT-CVD) kugira ngo:

● Kurandura umwanda: Ingano nto ya TaC (urugero: boron <0.01 ppm vs. 1 ppm muri grafiti) igabanya inenge mu ma kristu ya SiC, bigatuma habaho ubudahangarwa bwa wafer (4.5 ohm-cm vs. 0.1 ohm-cm kuri grafiti idapfutse).

● Kongera imicungire y'ubushyuhe: Ingufu zituruka ku bushyuhe bungana (0.3 kuri 1000°C) zituma ubushyuhe bukwirakwira neza, bigatuma ubwiza bwa kristu burushaho kuba bwiza.

2. Gukura kwa Epitaxial (GaN/SiC)

Mu byuma bitanga CVD by'icyuma (MOCVD), ibice bya TaC nk'ibitwara wafer n'ibikoresha injection:

●Kurinda ingaruka za gaze: Irwanya gushwanyaguzwa na amoniya na hydrogen kuri 1400°C, igakomeza ubuziranenge bwa reactor.

●Kunoza umusaruro: Mu kugabanya gushonga kw'uduce duto twa grafiti, CVD TaC coating igabanya inenge mu bice bya epitaxial, ingenzi cyane ku bikoresho bya LED bitanga umusaruro mwinshi n'ibikoresho bya RF.

3. Izindi porogaramu za Semiconductor

●Reakteri zikoresha ubushyuhe bwinshi: Utwuma dushyushya n'udushyushya mu musaruro wa GaN twungukira ku kuntu TaC ihagaze neza mu bidukikije bikungahaye kuri hydrogen.

●Gufata Wafer: Ibice bitwikiriye nk'impeta n'umupfundikizo bigabanya kwanduzanya kw'icyuma mu gihe cyo kohereza wafer

Ⅲ. Kuki TaC Coating Irusha Ubundi Buryo?

Kugereranya ibikoresho bisanzwe bigaragaza ko TaC ari nziza kurusha izindi:

Amakuru yavuye mu kugereranya inganda

IV. Kuki wahitamo VET?

Nyuma yo gukomeza gushora imari mu bushakashatsi no guteza imbere ikoranabuhanga,VETIbice bya Tantalum carbide (TaC) bitwikiriwe, urugero nkaImpeta y'ubuyobozi ya grafiti itwikiriwe na TaC, Igikoresho cyo gufunga icyuma gikozwe mu mashini ya CVD TaC, Susceptor ya TaC ikoreshwa mu bikoresho bya Epitaxy,Ibikoresho bya grafiti bifite imyenge ya Tantalum carbidenaImashini ifata umugati ifite TaC coating, birakunzwe cyane ku masoko y'i Burayi na Amerika. VET irakwishimiye cyane kuba umufatanyabikorwa wawe w'igihe kirekire.