Ikirangantego cya TaC ni iki?

Mu nganda zigenda zihuta cyane mu nganda, ibikoresho byongera imikorere, biramba, kandi bikora neza. Kimwe muri ibyo bishya ni Tantalum Carbide (TaC) igipfundikizo, igicye cyo gukingira ikoreshwa mubice bya grafite. Iyi blog irasobanura ibisobanuro bya TaC, ibisobanuro bya tekiniki, hamwe nuburyo bukoreshwa muburyo bwo gukora igice cya kabiri.

Ⅰ. Ikirangantego cya TaC ni iki?

Igikoresho cya TaC ni ceramic ikora cyane igizwe na karbide ya tantalum (ikomatanya rya tantalum na karubone) yashyizwe hejuru ya grafite. Ipitingi isanzwe ikoreshwa hifashishijwe uburyo bwa Vapor Deposition (CVD) cyangwa tekinike yumubiri (PVD), ikora inzitizi yuzuye, ultra-yera ikingira grafite mubihe bikabije.

Ibyingenzi byingenzi bya TaC

●Ubushyuhe bwo hejuru: Ihangane n'ubushyuhe burenga 2200 ° C, buruta ibikoresho gakondo nka silikoni karbide (SiC), igabanuka hejuru ya 1600 ° C.

●Kurwanya imiti: Irwanya ruswa ituruka kuri hydrogène (H₂), ammonia (NH₃), imyuka ya silicon, hamwe nicyuma gishongeshejwe, ingenzi kubidukikije bitunganyirizwa hamwe.

●Ultra-Yera: Urwego rwumwanda uri munsi ya 5 ppm, kugabanya ingaruka zanduye mugikorwa cyo gukura kwa kristu.

●Ubushyuhe hamwe nubukanishi: Kwizirika cyane kuri grafite, kwaguka k'ubushyuhe buke (6.3 × 10⁻⁶ / K), no gukomera (~ 2000 HK) byemeza kuramba munsi yumukino wo gusiganwa ku magare.

Ⅱ. TaC Ipfunyika mu Gukora Semiconductor: Porogaramu Zingenzi

Ibikoresho bya TaC bifatanyirijwe hamwe ni ntangarugero mu guhimba semiconductor igezweho, cyane cyane kuri karubide ya silicon (SiC) hamwe na nitride ya gallium (GaN). Hano haribibazo byabo bikomeye byo gukoresha:

1. Gukura kwa SiC imwe rukumbi

Wafers ya SiC ningirakamaro kubikoresho bya elegitoroniki n’ibinyabiziga byamashanyarazi. TaC ikozweho na grafite ya cruite na susceptors ikoreshwa muri Transport Vapor Transport (PVT) hamwe na sisitemu yo hejuru ya CVD (HT-CVD) kugirango:

Kurwanya umwanda.

Kongera imicungire yubushyuhe: Emissivité imwe (0.3 kuri 1000 ° C) itanga ikwirakwizwa ryubushyuhe buhoraho, igahindura ubwiza bwa kristu.

2. Gukura Epitaxial (GaN / SiC)

Muri reaction ya Metal-Organic CVD (MOCVD), ibice bya TaC bifatanye nkibikoresho bya wafer hamwe ninshinge:

●Irinde imyuka ya gaze: Irwanya guterwa na ammonia na hydrogen kuri 1400 ° C, bikomeza ubusugire bwa reaktor.

●Kunoza umusaruro: Mugabanye uduce duto duto twa grafite, CVD TaC igabanya kugabanya inenge ziri murwego rwa epitaxial, ingenzi cyane kubikorwa bya LED hamwe nibikoresho bya RF.

3. Ibindi bikoresho bya Semiconductor

●Ubushyuhe bwo hejuru: Suseptors hamwe nubushuhe mubikorwa bya GaN byunguka umutekano wa TaC mubidukikije bikungahaye kuri hydrogen.

●Gukemura Wafer: Ibikoresho bitwikiriye nk'impeta n'ibipfundikizo bigabanya kwanduza ibyuma mugihe cyohereza wafer

Ⅲ. Kuki TaC Coating iruta ubundi buryo?

Kugereranya nibikoresho bisanzwe byerekana ubunararibonye bwa TaC:

Amakuru yaturutse mu kugereranya inganda

IV. Kuki uhitamo VET?

Nyuma yo gushora imari mubushakashatsi bwikoranabuhanga niterambere,VET'Tantalum karbide (TaC) ibice bisize, nkaTaC yatwikiriye igishushanyo mbonera, CVD TaC Yashizweho isahani, TaC Coated Susceptor kubikoresho bya Epitaxy,Tantalum karbide yatwikiriye ibikoresho bya grafitenaWafer susceptor hamwe na TaC, zirazwi cyane kumasoko yuburayi na Amerika. VET itegereje bivuye ku mutima kuba umukunzi wawe w'igihe kirekire.