Ibice bya SiC Epitaxial

Udupira twa CVD twiza two gukura kwa SiC Epitaxial

Byagenewe imikorere y'ibikoresho bya semiconductor bifite imbaraga nyinshi bikora mu gihe cy'ubushyuhe bukabije (1500°C - 1700°C), CVD SiC na TaC coated planetary susceptors, disiki za satelite, na gaze deflectors byubatswe kugira ngo birusheho kuba byiza. Byagenewe gukumira ko ibice bikura, kwangirika kw'ubuso, no gutwika gaze (H₂, SiH₄, C₃H∯), coating yacu igezweho ituma ikora igihe kirekire, igenzura neza dopant, kandi ifite ubunini bwa filime bungana muri rusange.Wafer za SiC epitaxial za santimetero 6 na santimetero 8.

Guhagarara neza mu bushyuhe bwinshi cyane

Ubushyuhe buhagaze neza kugeza kuri 1700°C mu bidukikije bigabanya ubushyuhe bwa H₂/silane.

Guhuza Gradient CTE

Bikuraho gutandukana kw'ipamba, gucikagurika no kwangirika mu gihe cy'ubushyuhe bwihuse.

Ubushobozi bwo kwitegura gupima umugati wa santimetero 8

Uburyo bwo gutunganya neza CNC bwagenewe ibyuma bishya bya SiC Epi (LPE, Aixtron, Nuflare) byo mu bwoko bwa next-gen.

Igipimo cya tekiniki	Agaciro k'ibisobanuro	Uburyo Busanzwe / Uburyo bwo Gupima
Amahitamo y'ibikoresho byo gusiga	CVD SiC / Tantalum Carbide (TaC)	Icyuma gikozwe mu buryo bwa High-Purity Hermetic Layer
Icyuma gishingiye ku ishingiro	Graphite isukuye ya Isostatic	Ubusambo bwinshi < 5 ppm
Ubudahangarwa bw'ihungabana ry'ubushyuhe	Igipimo cy'inzira ya Delta T > 500°C	Nta gucika / gukurura
Ubukana bw'ubuso (Ra)	≤ 0.4 μm (Indorerwamo irabagirana)	Irinda ko uduce tw'umugati dufatana n'uduce