Ibice bya CVD SiC bya Silicon Epitaxy (Si Epi)
Byakozwe neza cyane mu buryo bwo gushyiramo ibyuma bya CVD SiC, disiki za satelite, n'ibice by'ubushyuhe bitanga ubushyuhe bungana neza kandi nta gaze isohokamo. Urupapuro rwo hejuru rwa cubic β-SiC rutwikira neza icyuma cya grafiti gifite ubuziranenge bwinshi, bikarinda gushonga kwa gaze (SiH₄, SiH₂Cl₂, HCl) kandi bikagaragaza ko urwego rw'ubushyuhe ruto cyane (< 5 ppm) mu gihe cyo gutunganya Si Epi mu bushyuhe bwinshi (1000°C - 1200°C).
Ubushobozi bwo kohereza ibintu bugenzurwa butuma icyuma gifata neza uburebure bwa wafer uhereye hagati ujya hagati.
Itanga uburinzi bukomeye ku miti isukura mu cyumba hamwe n'ibiyobyabwenge bishyuha.
CNC ikozwe neza ikoresheje imashini kugira ngo ihuze n'ibikoresho bya Epi bya 200mm/300mm by'umugati umwe (Ibikoresho bikoreshwa, ASM).
| Igipimo cya tekiniki | Agaciro k'ibisobanuro | Uburyo Busanzwe / Uburyo bwo Gupima |
|---|---|---|
| Ibikoresho byo gutwikira | CVD β-SiC (Igice cya Cubic) | Imiterere ya Crystalline ifite ubucucike bwinshi |
| Ibikoresho byo munsi y'ubutaka | Graphite Isostatic Isukuye Cyane | Ubucucike: 1.82 - 1.88 g/cm³ |
| Ubuziranenge bw'ibinyabutabire | Imyanda yose < 5 ppm | GDMS Yapimwe |
| Ubunini bw'igitambaro | 80 μm - 150 μm | Ubumwe ≤ ± 5% |
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