2 Iziphumo zovavanyo kunye nengxoxo
2.1Umaleko we-Epitaxialubukhulu kunye nokufana
Ubungqingqwa be-Epitaxial layer, ugxininiso lwe-doping kunye nokufana ngomnye wezalathi ezingundoqo zokugweba umgangatho we-epitaxial wafers. Ubukhulu obulawulekayo ngokuchanekileyo, ugxininiso lwe-doping kunye nokufana phakathi kwe-wafer ngundoqo ekuqinisekiseni ukusebenza kunye nokungaguquguqukiIzixhobo zamandla zeSiC, kunye nobukhulu be-epitaxial layer kunye nokufana kwe-doping concentration nazo ziziseko ezibalulekileyo zokulinganisa amandla enkqubo yezixhobo ze-epitaxial.
Umzobo wesi-3 ubonisa ukufana kobukhulu kunye nokusabalalisa ijika le-150 mm kunye ne-200 mmI-SiC epitaxial wafers. Inokubonwa kumzobo ukuba i-epitaxial layer thick distribution curve i-symmetrical malunga nombindi we-wafer. Ixesha lenkqubo ye-epitaxial ngama-600s, ubukhulu be-epitaxial layer ye-150mm ye-epitaxial wafer yi-10.89 um, kwaye ukufana kobunzima yi-1.05%. Ngokubala, izinga lokukhula kwe-epitaxial yi-65.3 um / h, eyona nqanaba eliqhelekileyo lenkqubo ye-epitaxial. Ngaphantsi kwexesha elifanayo lenkqubo ye-epitaxial, ubukhulu be-epitaxial layer ye-200 mm epitaxial wafer yi-10.10 um, ukufana kobunzima bungaphakathi kwe-1.36%, kwaye izinga lokukhula ngokubanzi li-60.60 um / h, elingaphantsi kancinci kune-150 mm izinga lokukhula kwe-epitaxial. Oku kungenxa yokuba kukho ilahleko ecacileyo endleleni xa umthombo wesilicon kunye nomthombo wekhabhoni uphuma usuka phezulu kwegumbi lokusabela udlula kwindawo yesiwapha ukuya ezantsi kwegumbi lokusabela, kwaye indawo ye-wafer eyi-200 mm inkulu kune-150 mm. Irhasi ihamba kumphezulu we-200 mm wafer umgama omde, kwaye umthombo wegesi osetyenzisiweyo endleleni ungaphezulu. Ngaphantsi kwemeko yokuba i-wafer igcina ukujikeleza, ubuninzi be-epitaxial layer buncinci, ngoko izinga lokukhula lihamba kancinci. Ngokubanzi, ubukhulu obufanayo be-150 mm kunye ne-200 mm epitaxial wafers bugqwesileyo, kwaye inkqubo yobuchule besixhobo inokuhlangabezana neemfuno zezixhobo eziphezulu.
2.2 I-Epitaxial layer doping concentration kunye nokufana
Umzobo 4 ubonisa ukufana koxinaniso lwedoping kunye nokuhanjiswa kwegophe le-150 mm kunye ne-200 mm.I-SiC epitaxial wafers. Njengoko kunokubonwa kumzobo, ijiko losasazo loxinaniso kwi-wafer ye-epitaxial ine-symmetry ecacileyo xa kuthelekiswa nombindi we-wafer. I-doping concentration uniformity ye-150 mm kunye ne-200 mm epitaxial layers yi-2.80% kunye ne-2.66% ngokulandelanayo, enokulawulwa ngaphakathi kwe-3%, eyona nqanaba elihle kakhulu kwizixhobo ezifanayo zamazwe ngamazwe. Ijiko logxininiso lwe-doping lomaleko we-epitaxial lisasazwa kwimilo ethi "W" ecaleni kwecala ledayamitha, emiselwa ubukhulu becala yintsimi yodonga oluthe tyaba olushushu lwe-epitaxial furnace, ngenxa yokuba isalathiso sokuhamba komoya esithe tye somlilo we-epitaxial wokukhula sisuka kwisiphelo sokungena komoya (phezulu) kwaye uqukuqela uphuma kumphezulu we-waminar ezantsi; ngenxa yokuba "indlela yokuncipha" izinga lomthombo wekhabhoni (C2H4) liphezulu kunelo lomthombo we-silicon (TCS), xa i-wafer ijikeleza, i-C / Si yokwenyani kumphezulu we-wafer iyancipha ngokuthe ngcembe ukusuka emphethweni ukuya embindini (umthombo wekhabhoni embindini ungaphantsi), ngokutsho "kwithiyori yesikhundla sokhuphiswano" ye-C kunye ne-N, iziko le-doping liyancipha kancinci kancinci ukufana, i-edge N2 yongezwa njengembuyekezo ngexesha lenkqubo ye-epitaxial ukucotha ukuhla koxinzelelo lwe-doping ukusuka embindini ukuya emphethweni, ukwenzela ukuba ijika lokugqibela logxininiso lwe-doping lubonise "W" imilo.
2.3 Iziphene ze-Epitaxial layer
Ukongeza kubunzima kunye noxinzelelo lwe-doping, inqanaba lolawulo lwesiphene se-epitaxial likwayiparameter ephambili yokulinganisa umgangatho we-epitaxial wafers kunye nesalathisi esibalulekileyo sobuchule benkqubo yezixhobo ze-epitaxial. Nangona i-SBD kunye ne-MOSFET zineemfuno ezahlukeneyo zeziphene, iziphene ezicace ngakumbi ze-morphology yomphezulu ezifana neziphene zokuwa, iziphene ezinxantathu, iziphene zeminqathe, iziphene ze-comet, njl. Ukungaphumeleli kweetshiphusi eziqulethe ezi ziphene kuphezulu, ngoko ke ukulawula inani leziphene zokubulala kubaluleke kakhulu ekuphuculeni isivuno se-chip kunye nokunciphisa iindleko. Umzobo we-5 ubonisa ukuhanjiswa kweziphene zokubulala i-150 mm kunye ne-200 mm ye-SiC epitaxial wafers. Ngaphantsi kwemeko yokuba akukho kungalingani okucacileyo kwi-C / Si ratio, i-carrot defects kunye ne-comet defects inokupheliswa ngokusisiseko, ngelixa iziphene zokulahla kunye neziphene ezinxantathu zihambelana nokulawulwa kococeko ngexesha lokusebenza kwezixhobo ze-epitaxial, inqanaba lokungcola kweengxenye zegraphite kwigumbi lokuphendula, kunye nomgangatho we-substrate. Ukususela kwiThebhile 2, kunokubonwa ukuba i-defect defect density ye-150 mm kunye ne-200 mm epitaxial wafers ingalawulwa ngaphakathi kwe-0.3 particles / cm2, eyona nqanaba elihle kakhulu lohlobo olufanayo lwezixhobo. Inqanaba lokulawula uxinaniso olubulalayo lwe-150 mm epitaxial wafer lungcono kune-200 mm epitaxial wafer. Oku kungenxa yokuba inkqubo yokulungiselela i-substrate ye-150 mm ikhulile ngaphezu kwe-200 mm, umgangatho we-substrate ungcono, kunye nenqanaba lokulawula ukungcola kwe-150 mm yegumbi lokuphendula i-graphite lingcono.
2.4 Uburhabaxa bomphezulu we-epitaxial wafer
Umzobo we-6 ubonisa imifanekiso ye-AFM yobuso be-150 mm kunye ne-200 mm ye-SiC epitaxial wafers. Inokubonwa kumfanekiso ukuba ingcambu yomphezulu ithetha uburhabaxa obusikwere Ra we-150 mm kunye ne-200 mm epitaxial wafers yi-0.129 nm kunye ne-0.113 nm ngokulandelelana, kunye nomphezulu we-epitaxial layer igudileyo ngaphandle kwesiganeko esicacileyo sokuhlanganiswa kwe-macro-step. Le nto ibonisa ukuba ukukhula kwe-epitaxial layer isoloko igcina imo yokukhula kwenyathelo ngexesha lenkqubo yonke ye-epitaxial, kwaye akukho nyathelo lokuhlanganisa okwenzekayo. Ingabonwa ukuba ngokusebenzisa inkqubo yokukhula kwe-epitaxial ephuculweyo, i-epitaxial layers egudileyo inokufumaneka kwi-150 mm kunye ne-200 mm ye-angle ephantsi.
3 Isiphelo
I-150 mm kunye ne-200 mm 4H-SiC i-epitaxial wafers e-homogeneous epitaxial wafers yalungiswa ngempumelelo kwii-substrates zasekhaya zisebenzisa i-self-developed 200 mm SiC izixhobo zokukhula kwe-epitaxial, kunye nenkqubo ye-epitaxial ye-homogeneous efanelekileyo kwi-150 mm kunye ne-200 mm yaphuhliswa. Izinga lokukhula kwe-epitaxial linokuba likhulu kune-60 μm / h. Ngelixa udibana nemfuno ye-epitaxy enesantya esiphezulu, umgangatho we-epitaxial wafer ugqwesile. Ubukhulu obufanayo be-150 mm kunye ne-200 mm ye-SiC epitaxial wafers inokulawulwa ngaphakathi kwe-1.5%, ukufana koxinaniso kungaphantsi kwe-3%, ubuninzi besiphako esibulalayo bungaphantsi kwe-0.3 particles / cm2, kunye ne-epitaxial surface roughness root mean square Ra ingaphantsi kwe-0.15 nm. Iimpawu eziphambili zenkqubo ye-epitaxial wafers zikwizinga eliphezulu kwishishini.
Umthombo: Izixhobo eziZodwa kwiShishini loMbane
Umbhali: Xie Tianle, Li Ping, Yang Yu, Gong Xiaoliang, Ba Sai, Chen Guoqin, Wan Shengqiang
(48th Institute Research of China Electronics Technology Group Corporation, Changsha, Hunan 410111)
Ixesha lokuposa: Sep-04-2024