Iinxalenye zeSiC Epitaxial

Iingubo zeCVD eziPhambili zoKhula kweSiC Epitaxial

Yenzelwe iinkqubo zesixhobo se-semiconductor esinamandla aphezulu ezisebenza phantsi koxinzelelo olukhulu lobushushu (1500°C - 1700°C), ii-CVD SiC kunye ne-TaC coated planetary susceptors zethu, iidiski zesathelayithi, kunye nee-gas deflectors zenzelwe ukuba ziphumelele. Zenzelwe ukuthintela ukuveliswa kwee-particles, ukuwohloka komphezulu, kunye nokugrumba kwegesi okusebenzayo (H₂, SiH₄, C₃H∯), ii-coating zethu eziphambili ziqinisekisa ubomi obude bokusebenza, ulawulo oluphezulu lwe-dopant, kunye nokufana kwefilimu ephezulu kuyo yonke indawo.Iiwafer ze-SiC epitaxial ezi-6 intshi kunye nezi-8 intshi.

Uzinzo lobushushu obuphezulu kakhulu

Ubushushu obuzinze ukuya kuthi ga kwi-1700°C kwiindawo ezitshisa kakhulu ze-H₂/silane.

Ukuthelekiswa kweGradient CTE

Iphelisa ukuqhekeka kwe-coating, ukuqhekeka kwe-micro-cracking, kunye nokuqhekeka ngexesha lemijikelo yobushushu ekhawulezayo.

Ukulungela Isikali Se-Wafer se-intshi ezi-8

Umatshini wokulungisa i-CNC ochanekileyo olungiselelwe ii-reactors ze-SiC Epi zesizukulwana esilandelayo (i-LPE, i-Aixtron, i-Nuflare).

Ipharamitha yoBugcisa	Ixabiso leNkcazelo	Indlela esemgangathweni/yovavanyo
Iinketho zezinto zokugquma	I-CVD SiC / Tantalum Carbide (TaC)	Umaleko ococekileyo kakhulu
Isiseko sendawo	I-Graphite ecocekileyo ye-Isostatic	Ukungcola Okukhulu < 5 ppm
Ukumelana noTshabalalo oluTshisayo	I-Delta T > 500°C Ireyithi yokuHamba	Akukho kuqhekeka/ukuxobuka
Uburhabaxa bomphezulu (Ra)	≤ 0.4 μm (Isipili Esikhazimlisiweyo)	Ithintela ukunamathela kweWafer kunye namaqhekeza