Izixhobo ezifakwe i-CVD SiC zeSilicon Epitaxy (Si Epi)
Yenzelwe ngokuchanekileyo iinkqubo zokubeka i-single-wafer kunye ne-batch Silicon Epitaxial, ii-susceptors zethu ze-CVD SiC ezifakwe i-CVD SiC, iidiski zesathelayithi, kunye nezixhobo zentsimi yobushushu zibonelela ngokufana okugqwesileyo kobushushu kunye nokungaphumi kwegesi. Umaleko wokugquma we-cubic β-SiC oxineneyo kakhulu ugubungela ngokupheleleyo i-substrate ye-graphite ecocekileyo kakhulu, ukuthintela ukugrumba kwegesi okusebenzayo (i-SiH₄, i-SiH₂Cl₂, i-HCl) kwaye uqinisekisa amanqanaba okungcola kwesinyithi aphantsi kakhulu (< 5 ppm) ngexesha lokucubungula kwe-Si Epi yobushushu obuphezulu (1000°C - 1200°C).
Ukulawulwa kokukhupha umoya kuqinisekisa ukuqina okuchanekileyo kwefilimu enomphetho ukuya embindini.
Ibonelela ngokhuseleko oluqinileyo kwiikhemikhali zokucoca ezikwigumbi elingaphakathi kunye nokutshayiswa kobushushu.
I-CNC echanekileyo eyenziwe ngomatshini ukuze ilingane nezixhobo ze-Epi ze-200mm/300mm ezine-wafer enye (Izinto ezisetyenzisiweyo, i-ASM).
| Ipharamitha yoBugcisa | Ixabiso leNkcazelo | Indlela esemgangathweni/yovavanyo |
|---|---|---|
| Izinto zokugquma | I-CVD β-SiC (Isigaba seCubic) | Ulwakhiwo lwekristale olunobuninzi obuphezulu |
| Izinto ezingaphantsi komhlaba | I-Ultra-Pure Isostatic Graphite | Ubuninzi: 1.82 - 1.88 g/cm³ |
| Ucoceko lweeKhemikhali | Ukungcola okupheleleyo < 5 ppm | Ivavanyiwe i-GDMS |
| Ubukhulu bokwaleka | 80 μm - 150 μm | Ukufana ≤ ±5% |
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