Yintoni iTaC Coating?

Kwishishini le-semiconductor elitshintsha ngokukhawuleza, izixhobo eziphucula ukusebenza, ukuqina, kunye nokusebenza kakuhle zibalulekile. Enye yezo zinto zintsha yi-Tantalum Carbide (TaC) coating, umaleko okhuselayo osemgangathweni osetyenziswa kwiindawo zegrafiti. Le bhlog ihlola inkcazo ye-TaC coating, iingenelo zobugcisa, kunye nokusetyenziswa kwayo okuguqulayo kwimveliso ye-semiconductor.

Ⅰ. Yintoni i-TaC Coating?

I-TaC coating yi-ceramic layer esebenza kakhulu eyenziwe yi-tantalum carbide (i-compound ye-tantalum kunye ne-carbon) efakwe kwiindawo ze-graphite. I-coating idla ngokusetyenziswa ngeendlela ze-Chemical Vapor Deposition (CVD) okanye i-Physical Vapor Deposition (PVD), okwenza umqobo oqinileyo nococekileyo okhusela i-graphite kwiimeko ezinzima.

Iipropati eziphambili zeTaC Coating

●Uzinzo lobushushu obuphezulu: Imelana namaqondo obushushu angaphezulu kwama-2200°C, iphumelela ngaphezu kwezinto zemveli ezifana ne-silicon carbide (SiC), ewohloka ngaphezu kwe-1600°C.

●Ukumelana neekhemikhali: Iyamelana nokugqwala okuvela kwi-hydrogen (H₂), i-ammonia (NH₃), umphunga we-silicon, kunye neentsimbi ezinyibilikisiweyo, zibalulekile kwiindawo zokucubungula i-semiconductor.

●Ubumsulwa obuphezulu kakhulu: Amanqanaba okungcoliseka angaphantsi kwe-5 ppm, okunciphisa umngcipheko wongcoliseko kwiinkqubo zokukhula kwekristale.

●Ukuqina kobushushu kunye noomatshini: Ukunamathela okuqinileyo kwi-graphite, ukwanda okuphantsi kobushushu (6.3×10⁻⁶/K), kunye nobunzima (~2000 HK) kuqinisekisa ukuhlala ixesha elide phantsi komjikelo wobushushu.

Ⅱ. Ukwaleka kweTaC kwiMveliso yeeSemiconductor: Izicelo eziphambili

Izixhobo zegrafiti ezigqunywe yiTaC zibaluleke kakhulu kwimveliso ye-semiconductor ephucukileyo, ngakumbi kwizixhobo ze-silicon carbide (SiC) kunye ne-gallium nitride (GaN). Nazi iimeko zazo ezibalulekileyo zokusetyenziswa:

1. Ukukhula kweSiC Single Crystal

Ii-wafer ze-SiC zibalulekile kwiimoto ze-elektroniki ezisebenza ngamandla kunye nezombane. Ii-graphite crucibles kunye nee-susceptors ezifakwe kwi-TaC zisetyenziswa kwiinkqubo ze-Physical Vapor Transport (PVT) kunye ne-High-Temperature CVD (HT-CVD) ukuze:

● Nciphisa Ungcoliseko: Umxholo wokungcola okuphantsi kweTaC (umz., i-boron <0.01 ppm vs. 1 ppm kwi-graphite) inciphisa iziphene kwiikristale zeSiC, iphucula ukuxhathisa kwe-wafer (4.5 ohm-cm vs. 0.1 ohm-cm kwi-graphite engagqunywanga).

● Ukuphucula ulawulo lobushushu: Ukukhupha ubushushu okufanayo (0.3 kwi-1000°C) kuqinisekisa ukusasazwa kobushushu rhoqo, kuphucula umgangatho wekristale.

2. Ukukhula kwe-Epitaxial (GaN/SiC)

Kwi-reactors ze-Metal-Organic CVD (MOCVD), izinto ezifakwe i-TaC ezifana nee-wafer carriers kunye nee-injectors:

●Ukuthintela Iimpendulo Zegesi: Iyamelana nokugrunjwa yi-ammonia kunye ne-hydrogen kwi-1400°C, igcina ukuthembeka kwe-reactor.

●Phucula isivuno: Ngokunciphisa ukuchitheka kwamasuntswana kwi-graphite, i-CVD TaC coating inciphisa iziphene kwiileya ze-epitaxial, ezibalulekileyo kwii-LEDs ezisebenza kakuhle kunye nezixhobo ze-RF.

3. Ezinye izicelo zeSemiconductor

●IiReactors zoBushushu obuPhezulu: Ii-susceptors kunye nezifudumezi kwimveliso yeGaN ziyazuza kukuzinza kweTaC kwiindawo ezityebileyo ngehydrogen.

●Ukuphathwa kweWaferIzinto ezigqunyiweyo ezifana neeringi kunye neziciko zinciphisa ungcoliseko lwesinyithi ngexesha lokudluliselwa kwe-wafer

Ⅲ. Kutheni i-TaC Coating iphumelela ngakumbi kwezinye iindlela?

Uthelekiso nezinto eziqhelekileyo lubonisa ukuba iTaC igqwesile:

Idatha efunyenwe kuthelekiso lweshishini

IV. Kutheni ukhetha i-VET?

Emva kotyalo-mali oluqhubekayo kuphando nophuhliso lwetekhnoloji,Ugqirha wezilwanyanaIindawo ezigqunywe ngeTantalum carbide (TaC), ezifanaIndandatho yesikhokelo segrafayithi egqunywe yiTaC, Isixhasi seplate esigqunywe ngeCVD TaC, I-TaC Coated Susceptor yezixhobo ze-Epitaxy,Izinto zegrafayithi ezineembobo ezigqunywe yiTantalum carbidekwayeI-wafer susceptor ene-TaC coating, zithandwa kakhulu kwiimarike zaseYurophu naseMelika. I-VET ilangazelela ukuba liqabane lakho lexesha elide.