Yintoni i-TaC Coating?

Kumzi-mveliso we-semiconductor ovela ngokukhawuleza, izixhobo eziphucula ukusebenza, ukuqina, kunye nokusebenza kakuhle zibalulekile. Olunye uhlobo olutsha olunjalo yi-Tantalum Carbide (TaC) yokugquma, umaleko osikiweyo okhuselayo osetyenziswa kumacandelo egraphite. Le bhlog iphonononga ingcaciso yokwambathiso lwe-TaC, iinzuzo zobugcisa, kunye nosetyenziso lwayo lwenguqu kwimveliso ye-semiconductor.

Ⅰ. Yintoni i-TaC Coating?

Ukwaleka kwe-TaC ngumaleko we-ceramic osebenza kakhulu owenziwe ngetantalum carbide (ikhompawundi yetantalum kunye nekhabhoni) efakwe kumphezulu wegraphite. I-coating isetyenziswa ngokuqhelekileyo ngokusebenzisa i-Chemical Vapor Deposition (CVD) okanye i-Physical Vapor Deposition (PVD) ubuchule, ukudala umqobo oxineneyo, ococekileyo okhusela igraphite kwiimeko ezinzima.

IiPropati eziPhambili ze-TaC Coating

●Uzinzo lobushushu obuphezulu: Imelana namaqondo obushushu angaphezu kwe-2200 ° C, igqwesa izinto zemveli ezifana nesilicon carbide (SiC), ehlayo ngaphezulu kwe-1600 ° C.

●Ukumelana nemichiza: Ixhathisa i-corrosion evela kwi-hydrogen (H₂), i-ammonia (NH₃), imiphunga ye-silicon, kunye neentsimbi ezityhidiweyo, ezibaluleke kakhulu kwiindawo zokulungisa i-semiconductor.

●Ukucoceka okuphezulu kakhulu: Amanqanaba okungcola angaphantsi kwe-5 ppm, ukunciphisa imingcipheko yokungcola kwiinkqubo zokukhula kwe-crystal.

●Ukuqina kweThermal kunye noomatshini: Ukubambelela ngokuqinileyo kwigraphite, ukwandiswa kwe-thermal ephantsi (6.3 × 10⁻⁶ / K), kunye nobunzima (~ 2000 HK) kuqinisekisa ixesha elide phantsi kwebhayisikili ye-thermal.

Ⅱ. I-TaC Coating kwiSemiconductor Manufacturing: Izicelo eziphambili

Amalungu egraphite agqunywe yi-TaC ayimfuneko kulwakhiwo olukwizinga eliphezulu lwesemiconductor, ingakumbi kwisilicon carbide (SiC) kunye nezixhobo zegallium nitride (GaN). Ngezantsi kukho iimeko zokusetyenziswa kwazo ezibalulekileyo:

1. I-SiC yokuKhula kweCrystal enye

Ii-wafers ze-SiC zibalulekile kumbane we-elektroniki kunye nezithuthi zombane. Iikhreyibhile ezigqunywe nge-TaC ezigqunywe yigraphite zisetyenziswa kwiinkqubo zoThutho loMphunga woMzi (PVT) kunye ne-High-Temperature CVD (HT-CVD) uku:

● Ukucinezela Ungcoliseko: Umxholo wokungcola okuphantsi kwe-TaC (umzekelo, i-boron <0.01 ppm vs. 1 ppm kwi-graphite) inciphisa iziphene kwiikristale ze-SiC, ukuphucula i-wafer resistivity (4.5 ohm-cm vs. 0.1 ohm-cm ye-graphite engabonakaliyo).

● Ukuphucula uLawulo lwe-Thermal: Ukukhutshwa kwe-uniform emissivity (0.3 kwi-1000 ° C) iqinisekisa ukuhanjiswa kobushushu obuhambelanayo, ukuphucula umgangatho we-crystal.

2. Ukukhula kwe-Epitaxial (GaN/SiC)

Kwi-Metal-Organic CVD (MOCVD) reactors, amacandelo agqunywe yi-TaC afana nezithwali ze-wafer nee-injector:

●Ukuthintela ukusabela kwegesi: Ixhathisa ukuthungwa nge-ammonia kunye ne-hydrogen kwi-1400 ° C, igcina imfezeko ye-reactor.

●Phucula Isivuno: Ngokunciphisa ukuchithwa kwamasuntswana kwigraphite, iCVD TaC yokwambathisa inciphisa iziphene kumaleko epitaxial, kubalulekile kwii-LED ezisebenza ngokuphezulu kunye nezixhobo zeRF.

3. Ezinye izicelo zeSemiconductor

●IiReactors zobushushu obuphezulu: Izixhasi kunye nezifudumezi kwimveliso ye-GaN zixhamla kuzinzo lwe-TaC kwiindawo ezityebileyo nge-hydrogen.

●Ukuphatha iWafer: Izinto ezigqunyiweyo njengamakhonkco kunye neziciko zinciphisa ukungcoliseka kwesinyithi ngexesha lokudluliselwa kwe-wafer

Ⅲ. Kutheni le nto i-TaC Coating igqwesa ezinye iindlela ezizezinye?

Uthelekiso nezinto eziqhelekileyo luqaqambisa ukongama kwe-TaC:

Idatha efunyenwe kuthelekiso lweshishini

IV. Kutheni ukhetha i-VET?

Emva kotyalo-mali oluqhubekayo kuphando lwetekhnoloji kunye nophuhliso,I-VET's Tantalum carbide (TaC) iindawo ezigqunyiweyo, ezifanaI-TaC eqatywe iringi yegraphite yesikhokelo, I-CVD TaC Coated plate susceptor, i-TaC Coated Susceptor ye-Epitaxy Equipment,I-Tantalum carbide igqunywe nge-porous graphite imathiriyelikwayeI-Wafer susceptor ene-TaC yokwambathisa, zithandwa kakhulu kwiimarike zaseYurophu naseMelika. I-VET ijonge ngokunyanisekileyo ukuba liqabane lakho lexesha elide.