CVDUkwaleka kweSiCilungisa ngokutsha imida yeenkqubo zokwenziwa kwe-semiconductor ngesantya esimangalisayo. Obu buchwephesha bokugquma bubonakala bulula buye baba sisisombululo kwimingeni emithathu engundoqo yokungcoliseka kwamasuntswana, ubushushu obuphezulu kunye nokukhukuliseka kweplasma kwimveliso yetshiphu. Abenzi bezixhobo zesemiconductor abaphezulu behlabathi bayidwelise njengeteknoloji eqhelekileyo yezixhobo zesizukulwana esilandelayo. Ke, yintoni eyenza le ngubo ibe “sisikrweqe esingabonakaliyo” sokwenziwa kweetshiphu? Eli nqaku liza kuhlalutya ngokunzulu imigaqo yalo yobugcisa, usetyenziso oluphambili kunye nokuphumelela okuphambili.
Ⅰ. Inkcazo ye-CVD SiC yokwambathisa
I-CVD SiC yokwambathisa ibhekiselele kumaleko okhuselayo wesilicon carbide (SiC) efakwe kwisubstrate yinkqubo yokubeka umphunga wekhemikhali (CVD). I-Silicon carbide yikhompawundi ye-silicon kunye nekhabhoni, eyaziwa ngokuba lukhuni kwayo, i-thermal conductivity ephezulu, i-inertness yeekhemikhali kunye nokumelana nokushisa okuphezulu. Itekhnoloji ye-CVD inokwenza umaleko we-SiC wobunyulu obuphezulu, obuxineneyo kunye nobungqingqwa obufanayo, kwaye inokuhambelana kakhulu neejometri ezintsonkothileyo. Oku kwenza iingubo ze-CVD SiC zifaneleke kakhulu kwizicelo ezifunayo ezingenako ukukhawulelana nezixhobo zemveli ezininzi okanye ezinye iindlela zokugquma.
Ⅱ. Umgaqo wenkqubo yeCVD
I-Chemical vapor deposition (CVD) yindlela yokwenza izinto ezininzi esetyenziselwa ukuvelisa umgangatho ophezulu, izinto eziqinileyo ezisebenza ngokuphezulu. Umgaqo ongundoqo we-CVD ubandakanya ukusabela kwe-gaseous precursors kumphezulu we-substrate efudumeleyo ukwenza i-coating eqinile.
Nalu ucazululo olwenziwe lula lwenkqubo ye-SiC CVD:
Idayagram yomgaqo wenkqubo yeCVD
1. Intshayelelo eyandulelayo: I-Gaseous precursors, ngokuqhelekileyo i-silicon-containing gases (umzekelo, i-methyltrichlorosilane - i-MTS, okanye i-silane - i-SiH₄) kunye ne-carbon-containing gases (umz., ipropane - C₃H₈), ifakwe kwigumbi lokuphendula.
2. Ukuhanjiswa kwegesi: Ezi gesi zangaphambili zihamba phezu kwe-substrate eshushu.
3. I-Adsorption: Iimolekyuli zangaphambili zibhengeza kumphezulu we-substrate eshushu.
4. Ukusabela komphezulu: Kwiqondo lokushisa eliphezulu, i-adsorbed molecules ifumana ukuphendulwa kweekhemikhali, okubangelwa ukubola kwe-precursor kunye nokwakhiwa kwefilimu ye-SiC eqinile. Iimveliso ezikhutshwayo zikhutshwa ngendlela yeegesi.
5. Ukuchithwa kunye nokuphuma: Iimveliso zegesi zidesorb ukusuka kumphezulu kwaye emva koko zikhuphe kwigumbi. Ulawulo oluchanekileyo lobushushu, uxinzelelo, izinga lokuhamba kwegesi kunye nokugxininiswa kwe-precursor kubalulekile ekufezekiseni iipropati zefilimu ezifunwayo, kubandakanywa ubukhulu, ubumsulwa, i-crystallinity kunye nokubambelela.
Ⅲ. Ukusetyenziswa kwe-CVD SiC Coatings kwiiNkqubo zeSemiconductor
Iingubo ze-CVD SiC ziyimfuneko kwimveliso ye-semiconductor kuba indibaniselwano eyodwa yeepropathi ihlangabezana ngokuthe ngqo neemeko ezigqithisileyo kunye neemfuno ezingqongqo zokucoceka kwendawo yokuvelisa. Baphucula ukuxhathisa kwi-plasma corrosion, uhlaselo lweekhemikhali, kunye nokuveliswa kwamasuntswana, zonke ezo zibaluleke kakhulu ekwandiseni isivuno se-wafer kunye nexesha lokuphumla kwezixhobo.
Oku kulandelayo zezinye iindawo eziqhelekileyo ezigqunyiweyo ze-CVD SiC kunye neemeko zokusetyenziswa kwazo:
1. I-Plasma Etching Chamber kunye neRingi yokuGxila
Iimveliso: CVD SiC coated liners, showerheads, susceptors, kunye namakhonkco ekugxilwe kuwo.
Isicelo: Kwi-plasma etching, iplasma esebenzayo kakhulu isetyenziselwa ukususa ngokukhethayo izinto ezivela kwiiwafers. Izinto ezingagqunywanga okanye ezihlala ixesha elide ziwohloka ngokukhawuleza, nto leyo ekhokelela ekungcolisekeni kwamasuntswana kunye nokuhla rhoqo. Iingubo ze-CVD SiC zinokuchasana okugqwesileyo kwiikhemikhali zeplasma ezinobundlobongela (umzekelo, i-fluorine, i-chlorine, i-plasmas ye-bromine), ukwandisa ubomi bamacandelo abalulekileyo egumbi, kunye nokunciphisa isizukulwana samasuntswana, okwandisa ngokuthe ngqo isivuno se-wafer.
I-2.PECVD kunye namagumbi e-HDPCVD
Iimveliso: CVD SiC coated amagumbi reaction kunye electrode.
Usetyenziso: I-Plasma iphuculwe i-chemical vapor deposition (PECVD) kunye ne-high density plasma CVD (HDPCVD) isetyenziselwa ukufaka iifilimu ezibhityileyo (umz., iileya ze-dielectric, i-passivation layers). Ezi nkqubo zikwabandakanya ubume be-plasma oburhabaxa. Iingubo ze-CVD SiC zikhusela iindonga zegumbi kunye ne-electrodes ekukhukulisekeni, ukuqinisekisa umgangatho wefilimu ohambelanayo kunye nokunciphisa iziphene.
3. Izixhobo zokufakelwa kwe-ion
Iimveliso: I-CVD SiC iqatywe amacandelo e-beamline (umz., imingxuma, iikomityi zeFaraday).
Usetyenziso: Ukufakelwa kwe-ion kwazisa i-ion ze-dopant kwi-semiconductor substrates. Imiqadi ye-ion ene-eneji ephezulu inokubangela ukutshiza kunye nokukhukuliseka kwamalungu abonakalisiweyo. Ukuqina kunye nokucoceka okuphezulu kwe-CVD SiC kunciphisa ukuveliswa kweengqungquthela ukusuka kumacandelo e-beamline, ukuthintela ukungcoliswa kwee-wafers ngeli nyathelo elibalulekileyo le-doping.
4. Amacandelo e-epitaxial reactor
Iimveliso: CVD SiC coated susceptors kunye abasasazi igesi.
Usetyenziso: Ukukhula kwe-Epitaxial (EPI) kubandakanya ukukhulisa i-crystalline layers eyalelwe kakhulu kwi-substrate kumaqondo aphezulu. I-CVD SiC i-coated susceptors inikezela ukuzinza okuphezulu kwe-thermal kunye nokungangeni kweekhemikhali kumaqondo aphezulu, ukuqinisekisa ukufudumeza okufanayo kunye nokuthintela ukungcoliswa kwe-susceptor ngokwayo, okubaluleke kakhulu ekufezekiseni umgangatho ophezulu we-epitaxial layers.
Njengoko iijiyometri ze-chip zicutheka kwaye iimfuno zenkqubo ziya ziba namandla, imfuno yababoneleli be-CVD SiC ekumgangatho ophezulu kunye nabavelisi bokugquma beCVD iyaqhubeka nokukhula.
IV. Yeyiphi imingeni yenkqubo yokugquma i-CVD SiC?
Ngaphandle kweenzuzo ezinkulu zokugquma kwe-CVD SiC, ukwenziwa kwayo kunye nokusetyenziswa kwayo kusajongene nemingeni ethile yenkqubo. Ukusombulula le mingeni ngundoqo ekufezekiseni ukusebenza okuzinzileyo kunye nokusebenza kakuhle kweendleko.
Imingeni:
1. Ukunamathela kwi-substrate
I-SiC inokuba ngumngeni ukufezekisa ukunamathela okuqinileyo kunye okufanayo kwizinto ezahlukeneyo ze-substrate (umzekelo, i-graphite, i-silicon, i-ceramic) ngenxa yokwahlukana kwe-coefficients yokwandisa i-thermal kunye namandla angaphezulu. Ukubambelela kakubi kunokukhokelela kwi-delamination ngexesha lokuhamba ngebhayisikili eshushu okanye uxinzelelo lomatshini.
Izisombululo:
Ukulungiswa komphezulu: Ukucoca ngokucokisekileyo kunye nokunyangwa komhlaba (umzekelo, ukudibanisa, unyango lwe-plasma) ye-substrate ukususa ukungcola kunye nokudala umgangatho ofanelekileyo wokudibanisa.
Interlayer: Idiphozithi i-interlayer ecekethekileyo kunye ne-customized interlayer okanye i-buffer layer (umzekelo, i-pyrolytic carbon, i-TaC - efana ne-CVD TaC yokwambathisa kwizicelo ezithile) ukunciphisa ukungahambelani kwe-thermal kunye nokukhuthaza ukunamathela.
Lungiselela iiparamitha zokubeka: Lawula ngononophelo ubushushu bokubeka, uxinzelelo, kunye nomlinganiselo werhasi ukuze ukwandise i-nucleation kunye nokukhula kweefilimu ze-SiC kunye nokukhuthaza ukudibanisa okuqinileyo kobuso.
2. Uxinzelelo lwefilimu kunye nokuQhawuka
Ngexesha lokubekwa okanye ukupholisa okulandelayo, uxinzelelo olushiyekileyo lunokuphuhla ngaphakathi kweefilimu ze-SiC, zibangele ukuqhekeka okanye ukungqubana, ngakumbi kwiijiyometri ezinkulu okanye ezinzima.
Izisombululo:
Ulawulo lobushushu: Lawula ngokuchanekileyo amazinga okufudumeza kunye nokupholisa ukunciphisa ukothuka kwe-thermal kunye noxinzelelo.
Ukugquma kweGradient: Sebenzisa i-multilayer okanye i-gradient iindlela zokugquma ukuze utshintshe ngokuthe ngcembe ukwakheka kwezinto okanye ulwakhiwo ukulungiselela uxinzelelo.
I-Post-Deposition Annealing: Aneal iinxalenye ezigqunyiweyo ukuphelisa uxinzelelo olushiyekileyo kunye nokuphucula ingqibelelo yefilimu.
3. Ukuthotyelwa kunye nokuFaniswano kwiiJometri eziNxibelele
Ukubeka iileyibhile ezifanayo ezityebileyo nezilungeleleneyo kwiindawo ezineemilo ezintsonkothileyo, iireyishini zomgangatho ophezulu, okanye iitshaneli zangaphakathi kunokuba nzima ngenxa yokusikelwa umda kwi-precursor diffusion kunye ne-reaction kinetics.
Izisombululo:
ULungiselelo loYilo lweReactor: Yila ii-reactors ze-CVD ezinoguquko oluphuculweyo lokuhamba kwerhasi kunye nokulingana kobushushu ukuqinisekisa ukuhanjiswa okufanayo kwezandulela.
Inkqubo yoLungiso lweParameter: Uxinzelelo lwe-deposition, isantya sokuhamba, kunye nogxininiso lwe-precursor ukunyusa ukusasazwa kwesigaba segesi kwizinto ezinzima.
Ukubekwa kwamanqanaba amaninzi: Sebenzisa amanyathelo okubekwa okuqhubekayo okanye izilungiso ezijikelezayo ukuqinisekisa ukuba yonke imiphezulu igqunywe ngokwaneleyo.
V. FAQ
I-Q1: Nguwuphi umahluko ongundoqo phakathi kwe-CVD SiC kunye ne-PVD SiC kwizicelo ze-semiconductor?
A: Iingubo ze-CVD ziyi-columnar crystal structures kunye nococeko lwe> 99.99%, ezifanelekileyo kwiindawo ze-plasma; Iingubo ze-PVD zininzi i-amorphous / nanocrystalline kunye nokuhlambuluka kwe-<99.9%, ngokukodwa isetyenziselwa iingubo zokuhlobisa.
I-Q2: Bubuphi ubushushu obuphezulu bokuba i-coating inokumelana nayo?
A: Ukunyamezela kwexesha elifutshane le-1650 ° C (njengenkqubo ye-annealing), umda wokusetyenziswa kwexesha elide le-1450 ° C, ukugqithisa eli qondo lokushisa kuya kubangela ukuguqulwa kwesigaba ukusuka kwi-β-SiC ukuya kwi-α-SiC.
I-Q3: Uluhlu lokutyeba oluqhelekileyo?
A: Amacandelo Semiconductor ubukhulu becala 80-150μm, kunye neenjineli yenqwelo moya EBC ukutyabeka inokufikelela 300-500μm.
I-Q4: Ziziphi izinto eziphambili ezichaphazela iindleko?
A: Ukucoceka kwangaphambili (40%), ukusetyenziswa kwamandla kwezixhobo (30%), ilahleko yesivuno (20%). Ixabiso leyunithi yeengubo eziphakamileyo eziphezulu zingafikelela kwi-$ 5,000 / kg.
I-Q5: Ngabaphi abaxhasi abakhulu behlabathi?
A: IYurophu neUnited States: CoorsTek, Mersen, Ionbond; EAsia: Semixlab, Veteksemicon, Kallex (Taiwan), Scientech (Taiwan)
Ixesha lokuposa: Jun-09-2025