I nā makahiki i hala iho nei, ua omo a hoʻoheheʻe kā mākou hui i nā ʻenehana holomua ma ka home a ma waho. I kēia manawa, ua hoʻolako kā mākou hui i kahi hui o nā loea i hoʻolaʻa ʻia no ka hoʻomohala ʻana oʻO ka uhi ʻana o SiC i uhi ʻia me ka substrate Graphite no Semiconductor,ʻO ka uhi ʻana o ka silicon carbide,Mea Hoʻopaʻa MOCVD, Hoʻokūpaʻa kūikawā ma ka hoʻopili ʻana o nā waiwai kūʻai aku e pale aku i kekahi pōʻino i ka wā o ka halihali ʻana, Hoʻolohe kikoʻī i nā manaʻo maikaʻi a me nā ʻōlelo aʻoaʻo a kā mākou mea kūʻai aku hanohano.
I nā makahiki i hala iho nei, ua omo a hoʻoheheʻe kā mākou hui i nā ʻenehana holomua ma ka home a ma waho. I kēia manawa, ua hoʻolako kā mākou hui i kahi hui o nā loea i hoʻolaʻa ʻia no ka hoʻomohala ʻana oMea Hoʻopaʻa MOCVD, ʻO ka uhi ʻana o SiC i uhi ʻia me ka substrate Graphite no Semiconductor, Uhi ʻana o Silicon Carbide, Ma ke ʻano he mea hana akamai, ʻae pū mākou i ke kauoha i hana ʻia a hiki iā mākou ke hana like me kāu kiʻi a i ʻole ka laʻana kikoʻī. ʻO ka pahuhopu nui o kā mākou hui, ʻo ia ke ola i kahi hoʻomanaʻo kūpono i nā mea kūʻai aku āpau, a hoʻokumu i kahi pilina ʻoihana lōʻihi me nā mea kūʻai a me nā mea hoʻohana ma ka honua holoʻokoʻa.

ʻO ka uhi ʻana o CVD-SiC he mau ʻano o ke ʻano like, ka mea paʻa, ke kūpaʻa wela kiʻekiʻe, ke kūpaʻa oxidation, ka maʻemaʻe kiʻekiʻe, ke kūpaʻa waikawa a me ka alkali a me ka reagent organik, me nā waiwai kino a me nā kemika paʻa.

Ke hoʻohālikelike ʻia me nā mea graphite maʻemaʻe kiʻekiʻe, hoʻomaka ka graphite e oxidize ma 400C, kahi e nalowale ai ka pauka ma muli o ka oxidation, e hopena ana i ka haumia o ke kaiapuni i nā mea peripheral a me nā keʻena vacuum, a hoʻonui i nā haumia o ke kaiapuni maʻemaʻe kiʻekiʻe.

Eia nō naʻe, hiki i ka uhi ʻana o SiC ke mālama i ke kūpaʻa kino a me ka kemika ma 1600 degere, Hoʻohana nui ʻia ia i ka ʻoihana hou, ʻoi aku hoʻi i ka ʻoihana semiconductor.

Hāʻawi kā mākou hui i nā lawelawe hana uhi SiC ma ke ʻano CVD ma luna o ka ʻili o ka graphite, nā keramika a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā e loaʻa ana ke kalapona a me ka silicon ke hana i ka mahana kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe, nā molekala i waiho ʻia ma luna o ka ʻili o nā mea i uhi ʻia, e hana ana i ka papa pale SIC. Hoʻopaʻa paʻa ʻia ka SIC i hoʻokumu ʻia i ke kumu graphite, e hāʻawi ana i ke kumu graphite i nā waiwai kūikawā, no laila e hana ana i ka ʻili o ka graphite i paʻa, ʻaʻohe Porosity, kū'ē i ke ana wela kiʻekiʻe, kū'ē i ka corrosion a me ke kū'ē i ka oxidation.

Nā hiʻohiʻona nui:

1. Ke kūpaʻa ʻana i ka oxidation wela kiʻekiʻe:

He maikaʻi loa nō ke kūpaʻa ʻana i ka oxidation ke kiʻekiʻe ka mahana i 1600 C.

2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka waiho ʻana o ka mahu kemika ma lalo o ke kūlana chlorination wela kiʻekiʻe.

3. Ke kūpaʻa ʻana i ka ʻino: paʻakikī kiʻekiʻe, ʻili paʻa, nā ʻāpana maikaʻi.

4. Ke kūpaʻa ʻana i ka palaho: waikawa, alkali, paʻakai a me nā reagents organik.

Nā kikoʻī nui o nā uhi CVD-SIC:

Ka hiki ke hoʻolako:

10000 ʻāpana/ʻāpana i kēlā me kēia mahina
Hoʻopili a me ka lawe ʻana:
Hoʻopili ʻana: Hoʻopili maʻamau a ikaika
ʻEke Poly + Pahu + Carton + Pallet
Awa:
Ningbo/Shenzhen/Shanghai
Ka manawa o waena o ka hoʻomaka a i ka wā pau:

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