Ngwọta Igwe Ọkụ Graphite Dị Ọcha Maka Semiconductor Epitaxy

N'ime usoro semiconductor dị elu dịka MOCVD (Mkpụrụ Efu Mmiri Metal-Organic) na uto epitaxial nke SiC, njikwa ubi okpomọkụ na-ekpebi ozugbo nha nhata ọkpụrụkpụ nke ihe nkiri ahụ, ntinye doping, na mmepụta wafer kachasị. Dịka ihe mejupụtara ubi okpomọkụ bụ isi,Igwe ọkụ graphite dị eluga-arụ ọrụ nke ọma ma na-aga n'ihu n'okpuru oke okpomọkụ karịrị 1600°C n'ime gburugburu gas usoro nke na-emebi emebi nke ukwuu. Site na ijikọta ọmụmụ ihe gbasara ngwa ndị ahịa na ihe ọmụma dị mkpa gbasara ngwaahịa, isiokwu a na-enye nyocha miri emi nke uru teknụzụ, nhazi usoro, na ọrụ dị mkpa nke ihe na-ekpo ọkụ graphite dị ọcha na mmepụta wafer semiconductor.

Gịnị mere ị ga-eji họrọ ihe na-ekpo ọkụ graphite dị ọcha maka sistemụ MOCVD?

N'ime usoro dị oke mkpa dịka MOCVD na GaN/SiC epitaxy, ọbụna obere mgbanwe okpomọkụ (>2°C) nwere ike ibute mgbanwe ebili mmiri ma ọ bụ ntụpọ kristal na oyi akwa epitaxial. Iji ike okpomọkụ dị elu (100–150 W/m·K) na obere coefficient nke mgbasawanye okpomọkụ (CTE) mee ihe, ihe graphite dị ọcha na-eduzi okpomọkụ n'otu ụzọ ahụ n'ofe ihe mgbochi na elu wafer niile.

Njikọta Okpomọkụ na Njikwa Mpaghara dị iche iche

Iji lụso mfu radieshon okpomọkụ ọgụ n'ọnụ ọnụ ụlọ epitaxy, ihe na-ekpo ọkụ graphite dị ọcha nke ukwuu na-agụnyekarị nhazi njikwa okpomọkụ nke nwere ọtụtụ mpaghara. Site na mgbanwe nhazi mpaghara iguzogide kpọmkwem, ndị injinia na-ahazi mpaghara sekit na iguzogide eletriki dịka njirimara mfu okpomọkụ nke ubi mmiri ụlọ si dị. Nke a na-eme ka mgbanwe ubi okpomọkụ dị n'ofe mpaghara uto wafer dị n'ime ±1°C, na-eme ka o doo anya na eletriki na-adịgide adịgide n'ofe wafer niile dị na diski ahụ.

Njikwa Ọdịnaya Ash na Nkwenye Gburugburu Ebe Obibi Dị Ọcha nke Uhie

Usoro epitaxy semiconductor na-enwe mmetụta dị ukwuu na ihe ndị na-adịghị mma nke ígwè. Graphite ụlọ ọrụ nkịtị nwere ihe ndị dị ka ígwè (Fe), nickel (Ni), na ọla kọpa (Cu), nke na-agbanwe ma na-agbasa ngwa ngwa n'ime oyi akwa epitaxial na okpomọkụ dị elu, na-emebi voltaji mmebi ngwaọrụ na mmegharị ibugharị. Ihe na-ekpo ọkụ graphite dị ọcha nke ukwuu na-enweta usoro nhicha chlorination dị elu, na-ebelata ọdịnaya ntụ zuru oke ruo n'okpuru 5 ppm (na n'okpuru 2 ppm maka ọkwa semiconductor dị elu), na-egbochi mmetọ nke wafer epitaxial site na ihe ndị na-adịghị mma na ubi okpomọkụ na isi iyi.

Ihe Ndị Na-ekpo Ọkụ Graphite Dị Elu na Nhazi Wafer Semiconductor

Ihe ndị na-ekpo ọkụ Semiconductor na-enweta usoro ikpo ọkụ na oyi ngwa ngwa ugboro ugboro site na okpomọkụ ụlọ ruo ọtụtụ puku ogo Celsius. N'adịghị ka waya ndị na-ekpo ọkụ ígwè (dị ka tungsten ma ọ bụ molybdenum), nke na-agbanwegharị, na-aghọ ndị gbawara agbawa, ma ọ bụ na-ada ada na okpomọkụ dị elu, graphite na-egosipụta ihe pụrụ iche nke anụ ahụ: ike na-abawanye ka okpomọkụ na-arị elu.

Ike Mekaniki na Okpomọkụ Dị Elu na Nguzogide Ike ọgwụgwụ Nhazi

Ike nrụgide na mgbanwe nke ihe graphite na-abawanye ka okpomọkụ na-arị elu, na-arị elu n'etiti 2000°C na 2500°C. Njirimara a na-eme ka ndị na-ekpo ọkụ graphite ghara inwe mgbawa igwe ma ọ bụ mgbawa n'okpuru radieshon okpomọkụ siri ike na ọrụ okpomọkụ dị elu. N'ihi ya, a na-echekwa nkwụsi ike iguzogide eletriki n'oge ọrụ ogologo oge, na-ebelata nke ukwuu oge nkwụsị mmezi na-enweghị atụmatụ.

Nhazi 3D nke nkenke na nhazi sekit dị mgbagwoju anya

Ihe ndị na-arụ ọrụ semiconductor nke oge a chọrọ nhazi oghere dị obere nke ukwuu. Graphite dị ọcha nke ukwuu nwere ike ịrụ ọrụ pụrụ iche ma enwere ike ịhazi ya site na igwe CNC dị elu nke 5-axis dị elu n'ime usoro sekit dị mgbagwoju anya - dịka usoro eriri atọ, ụzọ apịachiri serpentine, na sekit abụọ-helix. Nhazi geometric ndị a dị oke mma na-eme ka mpaghara elu kpo oku dịkwuo elu n'ime oghere pere mpe, na-enweta mmepụta ike dị elu yana obere mmetụta inductance.

Uru Ọrụ Dị Mkpa nke Igwe Ọkụ Graphite A Na-ekpuchi SiC

Iji guzogide gburugburu usoro siri ike—dịka ikuku hydrogen dị elu ma ọ bụ gas etching nwere chlorine/fluorine—itinye akwa Silicon Carbide dị oke arọ (CVD SiC Coating) n'elu ihe mejupụtara graphite dị ọcha nke ukwuu aghọọla ihe ngwọta ọkọlọtọ nke ụlọ ọrụ.

Nguzogide Ịchacha Hydrogen na Ịwụfu Ihe Na-enweghị Akụkụ

N'oge SiC na Silicon epitaxy, oke H dị elu₂gas na-egbutu graphite a na-ekpuchighị ekpuchi nke ukwuu n'oge okpomọkụ dị elu (ihe ndị na-eme ka hydrogen kpụọ na-emepụta gas methane), na-eme ka elu graphite ahụ tọgbọrọ chakoo, na-eme ka ọ gbawaa, ma na-emepụta mmetọ ihe ndị na-adịghị mma. Mkpuchi CVD SiC dị oke njọ na-emechi obere oghere dị n'elu graphite 100%, na-ekewapụ mbuze gas kpamkpam ma na-emepụta gburugburu usoro dị ọcha nke ukwuu na enweghị mwụfu ihe ndị na-adịghị mma.

Ogologo oge na mgbasa ozi ike na mbelata ọnụ ahịa nke onye nwe ya (TCO)

N'ime gburugburu mmeghachi omume metụtara gas ndị na-arụ ọrụ nke ọma dịka HCl na NH₃, mkpuchi CVD SiC na-egosipụta ike kemịkalụ dị elu. Ọ bụghị naanị na ọ na-echebe ihe ndị dị na graphite site na ire ere kamakwa ọ na-agbatị usoro nnọchi nke ihe ndị na-ekpo ọkụ (na-eme ka ndụ ọrụ dịkwuo elu karịa 200%). Nke a na-ebelata nke ukwuu ọnụ ahịa zuru oke nke ihe mmepụta semiconductor (TCO) na ọnụ ahịa amortized kwa wafer.

Ọmụmụ Ihe: Idozi Nha na Mmetọ nke Mkpụrụ Okpomọkụ na SiC Epitaxy

Isi Ihe Mgbu Ndị Ahịa:Onye nrụpụta epitaxy semiconductor nke ọgbọ nke atọ a ma ama na Germany chere nsogbu abụọ dị oke njọ n'oge uto epitaxial SiC nke inch 6 (okpomọkụ usoro 1650°C, H) ihu.₂+ ikuku TCS: Nke mbụ, mgbanwe ọkpụrụkpụ oyi akwa epitaxial na nsọtụ wafer ruru ±3.8%, na-akpata ọdịda ngwaọrụ n'akụkụ. Nke abụọ, ihe na-ekpo ọkụ graphite OEM mbụ gosipụtara nnukwu mgbakasị hydrogen n'elu na mgbawa mgbe naanị awa 120 nke ojiji gasịrị, na-eduga na mmụba nke mbelata ihe ndị dị na ụlọ mmeghachi omume - gafere oke njupụta ntụpọ mma site na 3 × na nkezi.

Nchọpụta Ike VET na Ngwọta Pụrụ Iche

Mgbe ha tinyere aka, ndị otu injinịa VET Energy mere ihe ngosi electro-thermal na fluid-flow na ihe na-ekpo ọkụ OEM mbụ. Nchọpụta ahụ gosiri na enweghị ụgwọ ọrụ ike kpo oku zuru oke n'akụkụ na obere oghere/mgbawa nrụgide okpomọkụ na mkpuchi SiC elu (ọkpụrụkpụ mkpuchi ahụ dị naanị 60μm yana njikọ adịghị ike). Na nzaghachi, VET Energy nyere ngwọta injinia ezubere iche:

• Nhazi Nhazi Ọgba Okpomọkụ:Emebere atụmatụ njikwa iguzogide onwe onye nke mpaghara atọ, na-ebelata mpaghara ikpo ọkụ geometric site na 8% nso mpaghara mgbasa ozi iji bulie njupụta ike mpaghara.
• Mmelite Elu-Ọcha Substrate:Graphite isostatic dị elu ahọpụtara nke nwere oke ntụ ruru ihe na-erughị 2 ppm, nke dabara kpọmkwem na oke mgbasa okpomọkụ (CTE) na mkpuchi SiC (CTE dakọtara >98%).
• Mmelite Usoro CVD SiC:Ejiri usoro nchekwa CVD eme ka ọ dịkwuo mma, na-eme ka ọkpụrụkpụ mkpuchi SiC dị n'elu ruo 150 ± 10 μm, yana usoro ọka dị oke, nke na-enweghị oghere, nke nwere ike iguzogide 1700°CH₂ịchafụ.

Enyere Nsonaazụ Mmejuputa na Uru Ndị Ahịa

Mgbe ụbọchị iri atọ nke nyocha ahịrị mmepụta gasịrị, onye ahịa ahụ kọrọ na arụmọrụ ya dị mma nke ukwuu: nha nha ọkpụrụkpụ epitaxial zuru oke (gụnyere mwepụ nke 3mm) ka mma nke ukwuu site na±3.8% ruo ±0.8%ihe na-ekpo ọkụ na-arụ ọrụ mgbe niile makaihe karịrị awa 400enweghị mgbawa mkpuchi ọ bụla ma ọ bụ mgbawa elu; ntụpọ ihe dị n'ime ụlọ nke na-agba otu ugboro (>0.5μm) bụbelatara site na 85%Nke a butere mmụba 12% ozugbo na mmepụta chip praịm kwa wafer ma belata ọnụ ahịa mmezi akụrụngwa kwa afọ site na ihe dị ka€85,000.

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