CVDSiC coatingiri kugadziridzazve miganho yekugadzira semiconductor pamwero unoshamisa. Iyi inoratidzika kunge yakapfava tekinoroji yekunamira yave mhinduro yakakosha kumatambudziko matatu makuru ekusvibiswa kwechidimbu, kupisa-kupisa kwekupisa uye kukukurwa kweplasma mukugadzira chip. Vagadziri vepamusoro semiconductor midziyo yepasi rose vakainyora seyakajairwa tekinoroji yezvigadzirwa zvechizvarwa chinotevera. Saka, chii chinoita kuti uku kupfekedzwa kuve "chisikwa chisingaoneki" chekugadzira chip? Ichi chinyorwa chichaongorora zvakadzama misimboti yayo yehunyanzvi, yakakosha mashandisirwo uye yekucheka-kumucheto mabudiro.
Ⅰ. Tsanangudzo yeCVD SiC coating
CVD SiC coating inoreva chikamu chekudzivirira chesilicon carbide (SiC) chakaiswa pane substrate nekemikari vapor deposition (CVD) process. Silicon carbide musanganiswa wesilicon uye kabhoni, inozivikanwa nekuomarara kwayo, yakakwira yekupisa conductivity, makemikari inertness uye yakakwirira tembiricha kuramba. CVD tekinoroji inogona kuumba yakakwirira-kuchena, yakakora uye yunifomu ukobvu SiC layer, uye inogona kuenderana zvakanyanya kune yakaoma geometries. Izvi zvinoita kuti CVD SiC coatings inyatsokodzera kukumbira maapplication ayo asingagone kusangana nezvakawanda zvechinyakare zvinhu kana dzimwe nzira dzekupfeka.
Ⅱ. CVD process musimboti
Kemikari vapor deposition (CVD) inzira inochinja-chinja yekugadzira inoshandiswa kugadzira yakakwirira-mhando, yepamusoro-inoshanda yakasimba zvinhu. Iyo musimboti musimboti weCVD unosanganisira kuita kwegasi precursors pamusoro peiyo inopisa substrate kuti iumbe yakasimba coating.
Heino kupatsanurwa kwakareruka kweSiC CVD maitiro:
CVD process musimboti dhayagiramu
1. Precursor sumo: Gaseous precursors, kazhinji silicon-ine magasi (eg, methyltrichlorosilane - MTS, kana silane - SiH₄) uye magasi ane kabhoni (semuenzaniso, propane - C₃H₈), anounzwa mukamuri yekupindura.
2. Kuendesa gasi: Aya magasi anotangira anoyerera pamusoro peiyo inopisa substrate.
3. Adsorption: Precursor mamorekuru adsorb kune pamusoro peiyo inopisa substrate.
4. Surface reaction: Pakupisa kwepamusoro, mamorekuru adsorbed anopinda maitiro emakemikari, zvichiita kuti kuora kweiyo inotangira uye kuumbwa kwefirimu yakasimba yeSiC. Byproducts inosunungurwa nenzira yemagasi.
5. Desorption uye kupera simba: Gaseous byproducts desorb kubva pamusoro uye ipapo kupera kubva mukamuri. Kunyatso kudzora tembiricha, kudzvanywa, gasi kuyerera uye precursor kusungirirwa kwakakosha kuti uwane yaunoda firimu zvimiro, kusanganisira ukobvu, kuchena, crystallinity uye kunamatira.
Ⅲ. Kushandiswa kweCVD SiC Coatings muSemiconductor Maitiro
CVD SiC coatings yakakosha mukugadzira semiconductor nekuti musanganiswa wavo wakasarudzika wezvivakwa unosangana zvakananga neakanyanya mamiriro uye zvakaomesesa kuchena zvinodiwa zvenzvimbo yekugadzira. Ivo vanosimudzira kuramba plasma corrosion, kurwisa kwemakemikari, uye chidimbu chizvarwa, izvo zvese zvakakosha kukwirisa goho rewafer uye nguva yemidziyo.
Izvi zvinotevera zvimwe zvakajairika CVD SiC yakavharwa zvikamu uye mamiriro ekushandisa kwavo:
1. Plasma Etching Chamber uye Focus Ring
Products: CVD SiC coated liners, showerheads, susceptors, uye mhete dzekutarisa.
Application: Mu plasma etching, yakanyanya kushanda plasma inoshandiswa kusarudza kubvisa zvinhu kubva pawafers. Zvishandiso zvisina kuvharwa kana kusasimba zvinodzikira nekukurumidza, zvichikonzera kusvibiswa kwechikamu uye nguva zhinji yekudonha. CVD SiC coatings ine yakanakisa kuramba kune hukasha plasma kemikari (semuenzaniso, fluorine, chlorine, bromine plasmas), kuwedzera hupenyu hweakakosha emakamuri ezvikamu, uye kuderedza chidimbu chizvarwa, icho chinowedzera zvakananga goho rewafer.
2.PECVD uye HDPCVD makamuri
Products: CVD SiC coated reaction chambers uye electrodes.
Applications: Plasma yakagadziridzwa kemikari vapor deposition (PECVD) uye yakakwirira density plasma CVD (HDPCVD) inoshandiswa kuisa mafirimu matete (semuenzaniso, dielectric layers, passivation layers). Aya maitiro anosanganisirawo hutsinye nharaunda dzeplasma. CVD SiC coatings inodzivirira madziro ekamuri uye maelectrode kubva mukukukurwa, kuve nechokwadi chekuenderana kwemafirimu emhando uye kuderedza kukanganisa.
3. Ion implantation equipment
Products: CVD SiC coated beamline components (semuenzaniso, apertures, Faraday makapu).
Applications: Ion implantation inosuma dopant ions mu semiconductor substrates. High-energy ion matanda anogona kukonzera sputtering uye kukukurwa kwezvinhu zviri pachena. Kuomarara uye kuchena kwakanyanya kweCVD SiC kunoderedza chizvarwa chechikamu kubva pamatanda emutsetse, kudzivirira kusvibiswa kwemafuti panguva iyi yakaoma doping nhanho.
4. Epitaxial reactor components
Products: CVD SiC yakavharwa susceptors uye gasi vanogovera.
Applications: Epitaxial kukura (EPI) inosanganisira kukura yakarongedzerwa crystalline layers pane substrate pakupisa kwakanyanya. CVD SiC coated susceptors inopa kugadzikana kwekushisa kwakanyanya uye kusagadzikana kwemakemikari pakupisa kwakanyanya, kuve nechokwadi chekudziya kweyunifomu nekudzivirira kusvibiswa kweiyo susceptor pachayo, izvo zvakakosha kuti uwane epitaxial yemhando yepamusoro.
Sezvo chip geometries inodzikira uye hurongwa hunodiwa hunowedzera, kudiwa kwepamusoro-mhando yeCVD SiC coating supplies uye CVD coating vagadziri kuri kuramba kuchikura.
IV. Ndeapi matambudziko eCVD SiC coating process?
Kunyangwe mabhenefiti makuru eCVD SiC coating, kugadzira kwayo uye kushandiswa kuchiri kutarisana nematambudziko ekuita. Kugadzirisa matambudziko aya ndiyo kiyi yekuwana yakagadzikana kuita uye mutengo-unoshanda.
Zvinetso:
1. Kunamatira kune substrate
SiC inogona kunetsa kuwana yakasimba uye yakafanana adhesion kune akasiyana substrate zvinhu (semuenzaniso, graphite, silicon, ceramic) nekuda kwekusiyana kwekupisa kwekuwedzera coefficients uye pamusoro pesimba. Kusasimba kunamatira kunogona kutungamira kune delamination panguva yekupisa bhasikoro kana mechanic kusagadzikana.
Mhinduro:
Kugadzirira kwepamusoro: Kunyatsochenesa uye kurapwa kwepamusoro (semuenzaniso, etching, plasma kurapwa) ye substrate kubvisa zvinosvibisa uye kugadzira nzvimbo yakakwana yekubatanidza.
Interlayer: Deposit yakatetepa uye yakasarudzika interlayer kana buffer layer (semuenzaniso, pyrolytic kabhoni, TaC - yakafanana neCVD TaC coating mune chaiyo maapplication) kudzikamisa kupisa kwekuwedzera kusawirirana uye kukurudzira kunamatira.
Optimize deposition parameters: Nyatsodzora tembiricha yekuisa, kudzvanywa, uye gasi reshiyo kukwidziridza nucleation uye kukura kwemafirimu eSiC uye kusimudzira yakasimba yekubatana kwekubatana.
2. Firimu Stress uye Kutsemuka
Panguva yekuisa kana kutonhora kunotevera, kushushikana kwasara kunogona kukura mukati meSiC mafirimu, zvichikonzera kuputika kana kuputika, kunyanya pane akakura kana akaomarara geometri.
Mhinduro:
Temperature Control: Nyatsodzora mitengo yekudziya uye yekutonhodza kuti uderedze kuvhunduka uye kusagadzikana.
Gradient Coating: Shandisa multilayer kana gradient coating nzira kuti zvishoma nezvishoma uchinje kuumbwa kwezvinhu kana chimiro kuti chigadzirise kushushikana.
Post-Deposition Annealing: Aneal iyo yakavharwa zvikamu kubvisa kusara kunetseka uye kuvandudza kuvimbika kwefirimu.
3. Conformality uye Uniformity pamusoro Complex Geometries
Kuisa machira akafanana akakora uye akajairwa pazvikamu zvine maumbirwo akaomarara, mareshiyo epamusoro, kana machanera emukati zvinogona kunetsa nekuda kwezvipimo mu precursor diffusion uye reaction kinetics.
Mhinduro:
Reactor Design Optimization: Dhizaina CVD reactors ane optimized gasi kuyerera dynamics uye tembiricha kufanana kuti ive nechokwadi chekugovera kwakafanana kwevanotangira.
Maitiro Parameter Kugadziriswa: Fine-tune deposition pressure, flow rate, uye precursor concentration yekuwedzera gasi phase diffusion kuita zvinhu zvakaoma.
Multi-stage deposition: Shandisa inoenderera nhanho yekuisa kana zvigadziriso zvinotenderera kuona kuti nzvimbo dzese dzakavharwa zvakakwana.
V. FAQ
Q1: Ndeupi musiyano mukuru pakati peCVD SiC nePVD SiC mune semiconductor application?
A: CVD coatings ndeye columnar crystal structures nekuchena kwe> 99.99%, inokodzera nzvimbo dzeplasma; PVD coatings kazhinji amorphous / nanocrystalline nekuchena kwe <99.9%, inonyanya kushandiswa pakushongedza.
Q2: Ndeipi yakanyanya tembiricha iyo iyo yekupfeka inogona kumira?
A: Kushivirira kwenguva pfupi kwe1650 ° C (yakadai seye annealing process), kushandiswa kwenguva refu kwe1450 ° C, kudarika iyi tembiricha kuchaita kuti chikamu chekuchinja kubva β-SiC kusvika α-SiC.
Q3: Yakajairika coating ukobvu renji?
A: Semiconductor zvinoriumba zvikuru 80-150μm, uye ndege injini EBC coatings anogona kusvika 300-500μm.
Q4: Ndezvipi zvinhu zvakakosha zvinokanganisa mutengo?
A: Precursor kuchena (40%), kushandiswa kwemagetsi emidziyo (30%), kurasikirwa kwegoho (20%). Mutengo wechikwata chepamusoro-soro chekuputira chinogona kusvika ku $ 5,000 / kg.
Q5: Ndeapi makuru epasi rese vatengesi?
A: Europe neUnited States: CoorsTek, Mersen, Ionbond; Asia: Semixlab, Veteksemicon, Kallex (Taiwan), Scientech (Taiwan)
Nguva yekutumira: Jun-09-2025