Zvikamu zveCVD SiC Zvakaputirwa zveSilicon Epitaxy (Si Epi)

Yakagadzirwa nemazvo kuti ishandise masisitimu ekuisa Silicon Epitaxial muchimiro che single-wafer uye batch, maCVD SiC coated susceptors, satellite disks, uye thermal field components zvinopa hunhu hwakanaka hwekupisa uye hazvibudisi mweya. Iyo high-density cubic β-SiC coating layer inofukidza zvizere high-purity graphite substrate, ichidzivirira reactive gas etching (SiH₄, SiH₂Cl₂, HCl) uye ichivimbisa ultra-low metallic uncleanness levels (< 5 ppm) panguva yekupisa kwakanyanya kweSi Epi processing (1000°C - 1200°C).