Ukucubungula kunye neePropathi zeCeramics zeSilicon Carbide ezinemingxuma

Ⅰ. Intshayelelo

Iiseramiki zeSilicon Carbide ezineengxangxasi (ezinezingxangxasi zeSiC)zizinto zeseramikhi eziphambili ezidibanisa iipropati ezibalaseleyo ze-silicon carbide kunye nesakhiwo esineembobo esenziwe ngononophelo. Ngokungafaniyo neeseramikhi zeSiC ezixineneyo, iSiC eneembobo ingenisa iimbobo ezidibeneyo ezibonelela ngemisebenzi eyongezelelweyo, kubandakanya ukuvuleka okulawulwayo, uyilo olukhaphukhaphu, ubushushu, kunye nokukwazi ukuthuthwa kolwelo okuphuculweyo.

Ngenxa yokuzinza okugqwesileyo kobushushu, ukumelana neekhemikhali, kunye nokuthembeka koomatshini, iiseramikhi zeSiC ezinemingxuma ziye zabaluleka ngakumbi kumashishini anobushushu obuphezulu, ingakumbi ukwenziwa kwee-semiconductor, apho iimeko zenkqubo zifuna ubunyulu obuphezulu, ukumelana nokugqwala, kunye nokuzinza kokusebenza ixesha elide.

Ⅱ. Iipropati zezinto ezibonakalayo zeCeramics zeSilicon Carbide ezinemingxuma

1. Uzinzo lobushushu obuphezulu

I-silicon carbide yaziwa ngokusebenza kwayo okugqwesileyo phantsi kobushushu obugqithisileyo ngenxa yokuqina kwayo kwe-Si-C covalent bonding. I-Porous SiC igcina ulungelelwano lwesakhiwo kwiindawo ezinobushushu obuphezulu, nto leyo eyenza ukuba ifaneleke kwi-semiconductor thermal processing, kwiinkqubo ze-epitaxy, kunye nezixhobo ze-furnace.

I-coefficient yayo yokwandisa ubushushu obuphantsi kunye nokumelana okuhle kakhulu nokutshayiswa kobushushu kunceda ekunciphiseni ukuguquguquka kunye nokuphucula uzinzo lwenkqubo.

2. Ukumelana okuphezulu kweekhemikhali kunye neplasma

Ukwenziwa kwee-semiconductor kubandakanya iigesi ezirhabaxa kunye neendawo zeplasma, kuquka iigesi ezisekelwe kwi-chlorine, i-fluorine plasma, kunye ne-atmospheres ezisabela kubushushu obuphezulu.

Iiseramikhi zeSiC ezinemingxuma zibonelela:

• Ukumelana kakuhle kwe-oxidation
• Uzinzo oluphezulu lweekhemikhali
• Ukumelana nokukhukuliseka kweplasma okunamandla
• Iimpawu zongcoliseko oluphantsi

Ezi nzuzo zinceda ekunciphiseni ukuveliswa kwee-particles kwaye zandise ubomi be-component kwizixhobo ze-semiconductor.

3. Ukulawulwa koMbobo kunye nokuVuleka kweGesi

Inzuzo ephambili ye-SiC enemingxuma yindlela eyakhiwe ngayo imingxuma ehlengahlengiswayo. Ngokulawula ubungakanani bemingxuma, ukusasazwa kwayo, kunye nokunxibelelana kwayo, abavelisi banokuphucula ibhalansi phakathi kwamandla oomatshini kunye nokuvuleka kwayo.

Olu phawu lukhethekileyo lwenza i-SiC enemingxuma isebenze njenge:

• Izixhobo zokusasazwa kwegesi
• Izakhiwo zokuhluza
• Izixhobo zolawulo lobushushu

Ⅲ. Ubuchwephesha bokuSebenza kweeCeramics zeSilicon Carbide ezineePorous

Ukusebenza kweeseramikhi zeSiC ezinemingxuma kuxhomekeke kakhulu kwiindlela zokuvelisa kunye noyilo lwesakhiwo esincinci.

Ukunciphisa iiCarbothermal

Le nkqubo yendabuko ivelisa i-SiC enemingxuma ngokusebenzisa ii-reactions zobushushu obuphezulu phakathi kwezinto eziqulethe i-silicon kunye nemithombo yekhabhoni. Ivumela ukwakheka kwe-high-purity SiC frameworks kunye nozinzo oluhle kakhulu lobushushu.

Ukucoca iSigaba soLwelo

Ukusinta okwenziwa ngephaseji yolwelo kusebenzisa izongezo ukuphucula ukubopha kunye nokuqina kweentwana. Ngokulungisa ubushushu bokusinta kunye nekhemistri yokongeza, abavelisi banokufikelela kumandla oomatshini aphuculweyo kunye nokusasazwa kweembobo.

Ukungena komphunga wekhemikhali (i-CVI)

I-CVI ingenisa ii-precursors zegesi kwizakhiwo ezinemingxuma, apho i-SiC igcina khona kwiindawo zangaphakathi. Le ndlela iphucula amandla esakhiwo, ubunyulu, kunye nokuqina kobushushu obuphezulu.

Iindlela zokufaka igwebu kunye neTemplate

Ubuchwepheshe obusebenzisa amagwebu kunye neetemplate zenza izakhiwo ze-pore ezihambelanayo ngokulawula izinto ezenza i-pore okanye iitemplate ezizincamayo. Ezi ndlela zibonelela ngobuchule obugqwesileyo bokungena kunye noyilo lwe-pore olulungiselelwe wena.

Ⅳ. Izicelo kwi-Semiconductor Manufacturing

Ngenxa yokudibanisa kwayo okwahlukileyo kweempawu zobushushu, iikhemikhali, kunye nolwakhiwo, iiseramikhi zeSiC ezinemingxuma ziya zisetyenziswa ngakumbi kwiinkqubo ze-semiconductor.

Izixhobo zoSasazo lweGesi

Kwiinkqubo ze-CVD, i-PECVD, kunye ne-ALD, i-SiC enemingxuma inokusebenza njenge-gas diffusers kunye neeplate zokusasaza ukuze kufezekiswe ukuhamba kwegesi ngendlela efanayo kunye nokuphucula ukuhambelana kokufakwa kwefilimu.

Izixhobo Zokucubungula I-Plasma

Kwiinkqubo zokugrumba nokucoca ngeplasma, izinto zeSiC ezinemingxuma zibonelela ngokuxhathisa okuphezulu kwiindawo ezingcolisayo zeplasma, zinciphisa ungcoliseko lwamasuntswana kwaye ziphucula ukuthembeka kwezixhobo.

Iinkqubo zeSiC kunye neGaN Epitaxy

Kwimveliso ye-semiconductor yesizukulwana sesithathu, i-SiC enemingxuma inegalelo ekuphuculweni kolawulo lobushushu kunye nokuzinza kwenkqubo kwiindawo zokukhula kwe-epitaxial ezinobushushu obuphezulu.

Izixhobo zokuphatha iWafer

Iichucks ze-vacuum ze-SiC ezinemingxumakwayeinkxaso ye-waferibonelela ngocoselelo oluphezulu, ungcoliseko oluphantsi, kunye nokumelana okuhle kweekhemikhali ekuhlolweni kwe-wafer, i-lithography, kunye nokucubungula ubushushu.

Ⅴ. Isiphelo

Iiceramics zeSilicon Carbide ezinemingxumaimele inguqu yeIzixhobo zeSiCukusuka kwi-ceramics zesakhiwo zemveli ukuya kwi-semiconductor components ezisebenzayo. Ngokusebenzisa ubuchwepheshe obuphambili bokucubungula kunye nolawulo oluchanekileyo lwesakhiwo se-pore, i-SiC ene-porous ifumana ibhalansi efanelekileyo phakathi kwamandla, ukuvuleka, ukusebenza kobushushu, kunye nokuzinza kweekhemikhali.

Njengoko ukwenziwa kwee-semiconductor kuqhubeka kuhambela phambili kumaqondo obushushu aphezulu kunye nolawulo oluqinileyo longcoliseko, iiseramikhi zeSiC ezinemingxuma ziya kudlala indima ebaluleke ngakumbi kwiIinkqubo zeCVD, izixhobo zokucubungula iplasma, ukuphathwa kwe-wafer, kunye nobuchwepheshe bokwenza i-semiconductor yesizukulwana esilandelayo.