Isifundo seTyala: Izixhobo zeGraphite eziPhucukileyo kakhulu kwiiNdawo zoBushushu zeMonocrystalline ezingama-32-Inch kwi-N-Type Silicon Growth
Umbhali:UGqr. Steven Qiu, iNjineli yeZixhobo zeSemiconductor ePhakamileyo kunye noMlawuli wezoBugcisa kwiVET Energy
Ipapashwe:Agasti 2026 | Ingxelo yoBugcisa kunye noHlalutyo loBunjineli
Isishwankathelo soLawulo kunye nesishwankathelo seProjekthi
- Ishishini:Ukuveliswa kweSilicon Wafer yeSolar PV kunye neSemiconductor
- Inkqubo:I-Czochralski (CZ) N-Type (TOPCon/HJT) I-Monocrystalline Ingot Pulling
- Izixhobo:Izithando zentsimi yobushushu ezinkulu ezingama-32-intshi (iiyunithi ezingama-50 zivavanyiwe)
- Isisombululo:Izixhobo zeGraphite eziHlanjululwe ngeHalogen eNzulu (Uthuthu ≤ 2-5 ppm) + iCVD SiC Coating
- Impembelelo Elinganisiweyo:Ubomi beMinority Carrier bunyusiwe ukusuka kwi-<100 μs ukuya kwi->380 μs; I-Ingot Yield +18%; Ixesha loBomi beThermal Field +30%.
Intshayelelo: Umngeni we-32-Inch Thermal Field ekukhuleni kwe-Silicon yohlobo lwe-N esebenza kakuhle kakhulu
Njengoko ishishini le-photovoltaics litshintsha ngokukhawuleza ukusuka kwi-P-type PERC ukuya kwi-N-type TOPCon kunye ne-Heterojunction (HJT) solar cells, imfuno yee-wafers ze-silicon ezicocekileyo kakhulu inyukile kakhulu. Ii-substrates ze-silicon zohlobo lwe-N zifuna ubomi obuphezulu kakhulu bokuthwala (ngesiqhelo >300 μs) kunye nongcoliseko lwe-transition metal oluphantse lube zero.
Ukuze kwandiswe amandla okuvelisa izinto, abavelisi be-silicon wafer bandisa ubungakanani be-crucible ukuya kwi-intshi ezingama-32 nangaphezulu. Nangona kunjalo, ukusebenza kumaqondo obushushu angaphezulu kwe-1,450°C kwintsimi yobushushu engama-intshi angama-32 kuzisa imingeni enzima yobunjineli:
- Ukuwohloka kobushushu kunye nokungalingani:Ubushushu obukhulu bubangela ukuguquka kwesakhiwo kunye nokuqhekeka kwezifudumezi zegrafiti eziqhelekileyo kunye neepedestals.
- Ungcoliseko lweSinyithi esiguquguqukayo:Izinto ezingcolisayo (iFe, iNi, iCu, iV) ngaphakathi kwegrafiti yesiqhelo ziyanyibilika ngexesha lokutsalwa kwekristale ixesha elide, zifudukele ngqo kwisilicon enyibilikisiweyo kwaye zibangele ukuwohloka okukhulu kobomi bokuthwala.
Isisombululo soBunjineli: I-Ultra-Purified Isostatic Graphite kunye ne-CVD SiC Shielding
Ukuze koyiswe ezi ngxaki zobugcisa, iVeTek Semiconductor isebenzise uhlaziyo olupheleleyo lwezinto kuyo yonke indibano yentsimi yobushushu engama-intshi angama-32, equka i-graphite ye-isostatic ephezulu echithwe kwi-halogen purification yobushushu obuphezulu kunye neengubo ze-CVD Silicon Carbide (SiC) ezikhuselayo.
1. Ukucocwa kweHalogen eNzulu (Umxholo woMlotha ≤ 2-5 ppm)
I-graphite yemizi-mveliso eqhelekileyo inomlotha omninzi ophakathi kwe-50 ppm kunye ne-200 ppm. Kwi-1,450°C phantsi kwe-vacuum, ezi zinto zincinci ziyaguquguquka. Inkqubo yethu yokucoca igesi ye-Halogen yoBushushu obuphezulu iguqula ukungcola kwesinyithi kube ziikhompawundi ze-halogen eziguquguqukayo (ii-chloride/ii-fluoride) kumaqondo obushushu angaphezu kwe-2,400°C.
- Uvavanyo lweGlow Discharge Mass Spectrometry (GDMS)iqinisekisa ukuba ukungcola kwesinyithi (iFe, iCr, iNi, iCu, iV) kuncitshisiwe ukuya ngaphantsi kwe-0.5 ppm, nto leyo efikelela kumxholo wothuthu olupheleleyo lwe-≤ 2 ppm.
- Isiphumo:Isusa ukuvela kwegesi yesinyithi engasemva, ikhusela ichibi lesilicon elinyibilikisiweyo ekungcolisweni ngexesha leeyure ezingaphezu kwe-120 zokujikeleza okuqhubekayo.
2. Ulwakhiwo lweGraphite eQhelekileyo enobuninzi obuphezulu ukuze kubekho uzinzo lobushushu
Izinto eziquka i-graphite heater, i-crucible susceptor, kunye ne-insulation barrel zenziwe nge-high-density (1.85 g/cm³), i-fine-grain (ubungakanani be-grain <10 μm) isostatic graphite. Ukucinezela kwe-isostatic kuqinisekisa ukwanda kwe-isotropic thermal (CTE) efanayo, kuthintela uxinzelelo lwe-thermal olukwindawo ethile, ukugoba, kunye nokuqhekeka koomatshini phantsi kwemijikelo yobushushu ephindaphindwayo.
3. Uphahla lwe-CVD Silicon Carbide (SiC) olukhuselayo
Izinto ezibalulekileyo ezivezwa kumphunga we-silicon kunye neegesi zokucoca ezibolayo zigqunywe ngumaleko oxineneyo we-50–80 μm we-Chemical Vapor Deposition (CVD) Silicon Carbide (SiC).
- Umqobo Wokugqwala:Ithintela ukusabela ngqo kweekhemikhali phakathi komphunga we-silicon oguquguqukayo (i-SiO2) kunye ne-graphite substrate (i-SiO2 + 2C → i-SiC + CO2), isusa ukukhukuliseka komphezulu kunye nokuveliswa kothuli lwekhabhoni.
- Ukuchaneka kweJiyometri:Igcina ijiyometri yentsimi yobushushu echanekileyo ngaphezu kwama-30% emisebenzi emide.
Idatha Yokusebenza Elinganisiweyo kunye noQinisekiso lweSilingo sasentsimini
Uvavanyo lwentsimi oluthelekisayo lweenyanga ezi-6 lwenziwe kwii-furniture ze-CZ ezingama-50 ezizii-intshi ezingama-32 ze-CZ kwisikali semveliso ye-TOPCon silicon wafer ye-tier-1. Apha ngezantsi kukho umlinganiselo wokusebenza othelekisa izinto zegrafiti ezisemgangathweni xa kuthelekiswa nesisombululo sentsimi yobushushu esicociweyo seVeTek Semiconductor:
| Imilinganiselo yokusebenza | Intsimi yobushushu yeGraphite esemgangathweni | I-VeTek Isisombululo seGrafite ecocekileyo |
|---|---|---|
| Umxholo wothuthu oluyiGraphite Bulk | 50 – 100 ppm | ≤ 2 – 5 ppm (iHalogen ecociweyo) |
| Ukungcola kwesinyithi okupheleleyo (i-GDMS) | ~15 – 30 ppm (Fe, Ni, V) | < 0.5 ppm |
| Ubomi boMthwali weMinority oPhakathi | 85 – 120 μs (Umahluko ophezulu) | 380 – 450 μs (Ihlala Iphezulu) |
| Ixesha Lokuphila Kwecandelo Lentsimi Yobushushu | Iibhayisekile zokutsala ezingama-60 ukuya kuma-75 | Iibhayisekile zokutsala ezingama-90 – 105 (+30%) |
| Izinga leN-Type Ingot Yield Rate ye-A-Grade N | 74.5% | 92.5% (+18% Uphuculo lweNzuzo) |
Imibuzo Ebuzwa Rhoqo (Imibuzo Ebuzwa Rhoqo)
Q1: Yintoni imbangela ephambili yokulahleka kwesivuno kwi-32-intshi N-type monocrystalline silicon pulling?
A1:Ukulahleka kwesivuno kubangelwa ikakhulu kukungcoliswa kokungcola kwesinyithi (ukunciphisa ubomi bokuthwala izinto ezincinci) kunye nokuguquguquka kobushushu besakhiwo see-graphite heaters ezinkulu, nto leyo ephazamisa ujongano lwekristale oluqinileyo nolwelo.
Umbuzo 2: Ukucocwa kwe-halogen kufikelela njani kumxholo wothuthu ongaphantsi kwe-5 ppm?
A2:Ukucocwa kweHalogen kuchaphazela iindawo zegrafiti kubushushu obuphezulu (>2,400°C) ngelixa kufakwa iigesi zechlorine kunye nefluorine. Ezi gesi zisabela kwizinto zesinyithi ezihlala nzulu, zijika zibe zii-halides zesinyithi eziguquguqukayo eziphumayo, zishiya igrafiti ecocekileyo kakhulu.
Umbuzo 3: Ngaba i-CVD SiC coating ingaphinda igqunywe okanye isetyenziswe kuzo zonke izinto ze-graphite thermal field?
A3:I-CVD SiC coating isetyenziswa kakuhle kwizinto ezigugileyo ezifana nee-graphite crucibles, ii-flow guides, ii-heaters, kunye nee-insulation barrels. Ngokuxhomekeke ekugugileni kwe-substrate, izinto ezithile zinokuphinda zenziwe ngomatshini kwaye ziphinde zigqunywe, nto leyo enciphisa iindleko zokusebenza zizonke.
Isiphelo kunye noNgcebiso loBugcisa
Ukuphucula ukuya kwiinxalenye zegrafiti ezicociweyo kakhulu ezine-CVD SiC protection kubonelela ngendlela ethe ngqo nenokulinganiseka yokusombulula iingxaki zesivuno kunye nokungcola ekukhuleni kwe-silicon ye-monocrystalline yohlobo lwe-32-intshi N. Ngokuphuculwa kwe-18% kwi-prime yield kunye nobomi be-thermal field obude be-30%, abavelisi be-solar wafer banokufikelela kwi-ROI enkulu.
Lungiselela intsimi yakho ye-Monocrystalline Thermal namhlanje
Khuphela iPhepha leDatha yoBugcisa eliPheleleyo (i-TDS) okanye unxibelelane neengcali zethu zobunjineli ukuze ufumane ikowuteshini eyenzelwe wena.
Lungiselela intsimi yakho ye-Monocrystalline Thermal namhlanje
Khuphela iPhepha leDatha yoBugcisa eliPheleleyo (i-TDS) okanye unxibelelane neengcali zethu zobunjineli ukuze ufumane ikowuteshini eyenzelwe wena.
Ixesha lokuthumela: Agasti-15-2026