Me ka loaʻa ʻana o kahi helu hōʻaiʻē ʻoihana maikaʻi, ke kōkua ma hope o ke kūʻai aku maikaʻi loa a me nā pono hana hou, ua loaʻa iā mākou kahi inoa kūikawā i waena o kā mākou mea kūʻai aku ma ka honua holoʻokoʻa no nā ʻāpana ʻo Tungsten Carbide (TC) / Silicon Carbide (SIC) Factory Cheapest China, Mai kali e hoʻokaʻaʻike mai iā mākou no kekahi mea makemake i kā mākou lawelawe. Ke manaʻoʻiʻo nei mākou e hauʻoli ʻoe i kā mākou huahana a me nā lawelawe.
Me ka loaʻa ʻana o kahi helu hōʻaiʻē ʻoihana maikaʻi, ke kākoʻo ma hope o ke kūʻai aku maikaʻi loa a me nā pono hana hou, ua loaʻa iā mākou kahi inoa kūikawā i waena o kā mākou mea kūʻai aku ma ka honua holoʻokoʻa noʻO ke alo o ka sila Tungsten Carbide Kina, Nā Apo Sila, Me ka ʻuhane ʻoihana o ka "kūlana kiʻekiʻe, ka maʻalahi, ka pono a me ka hana hou", a e like me ia alakaʻi lawelawe o ka "maikaʻi maikaʻi akā ʻoi aku ke kumukūʻai," a me ka "hōʻaiʻē honua", ke hoʻoikaika nei mākou e hana pū me nā ʻoihana ʻāpana kaʻa ma ka honua holoʻokoʻa e hana i kahi hui lanakila-lanakila.

ʻO ka uhi ʻana o CVD-SiC he mau ʻano o ke ʻano like, ka mea paʻa, ke kūpaʻa wela kiʻekiʻe, ke kūpaʻa oxidation, ka maʻemaʻe kiʻekiʻe, ke kūpaʻa waikawa a me ka alkali a me ka reagent organik, me nā waiwai kino a me nā kemika paʻa.

Ke hoʻohālikelike ʻia me nā mea graphite maʻemaʻe kiʻekiʻe, hoʻomaka ka graphite e oxidize ma 400C, kahi e nalowale ai ka pauka ma muli o ka oxidation, e hopena ana i ka haumia o ke kaiapuni i nā mea peripheral a me nā keʻena vacuum, a hoʻonui i nā haumia o ke kaiapuni maʻemaʻe kiʻekiʻe.

Eia nō naʻe, hiki i ka uhi ʻana o SiC ke mālama i ke kūpaʻa kino a me ka kemika ma 1600 degere, Hoʻohana nui ʻia ia i ka ʻoihana hou, ʻoi aku hoʻi i ka ʻoihana semiconductor.

Hāʻawi kā mākou hui i nā lawelawe hana uhi SiC ma ke ʻano CVD ma luna o ka ʻili o ka graphite, nā keramika a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā e loaʻa ana ke kalapona a me ka silicon ke hana i ka mahana kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe, nā molekala i waiho ʻia ma luna o ka ʻili o nā mea i uhi ʻia, e hana ana i ka papa pale SIC. Hoʻopaʻa paʻa ʻia ka SIC i hoʻokumu ʻia i ke kumu graphite, e hāʻawi ana i ke kumu graphite i nā waiwai kūikawā, no laila e hana ana i ka ʻili o ka graphite i paʻa, ʻaʻohe Porosity, kū'ē i ke ana wela kiʻekiʻe, kū'ē i ka corrosion a me ke kū'ē i ka oxidation.

Nā hiʻohiʻona nui:

1. Ke kūpaʻa ʻana i ka oxidation wela kiʻekiʻe:

He maikaʻi loa nō ke kūpaʻa ʻana i ka oxidation ke kiʻekiʻe ka mahana i 1600 C.

2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka waiho ʻana o ka mahu kemika ma lalo o ke kūlana chlorination wela kiʻekiʻe.

3. Ke kūpaʻa ʻana i ka ʻino: paʻakikī kiʻekiʻe, ʻili paʻa, nā ʻāpana maikaʻi.

4. Ke kūpaʻa ʻana i ka palaho: waikawa, alkali, paʻakai a me nā reagents organik.

Nā kikoʻī nui o nā uhi CVD-SIC:

Ka hiki ke hoʻolako:

10000 ʻāpana/ʻāpana i kēlā me kēia mahina
Hoʻopili a me ka lawe ʻana:
Hoʻopili ʻana: Hoʻopili maʻamau a ikaika
ʻEke Poly + Pahu + Carton + Pallet
Awa:
Ningbo/Shenzhen/Shanghai
Ka manawa o waena o ka hoʻomaka a i ka wā pau:

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