Njengoba sinesikweletu sebhizinisi esihle, usizo oluhle kakhulu ngemuva kokuthengisa kanye nezindawo zokukhiqiza zesimanje, manje sesithole igama elihle phakathi kwabathengi bethu emhlabeni wonke ngezingxenye ze-Cheapest Factory China Tungsten Carbide (TC) /Silicon Carbide (SIC), Qiniseka ukuthi awulindi ukuxhumana nathi nganoma ubani onentshisekelo ngezixazululo zethu. Sikholelwa ngokuqinile ukuthi imikhiqizo nezixazululo zethu zizokwenza ujabule.
Njengoba sinesikweletu esihle sebhizinisi, usizo oluhle kakhulu ngemuva kokuthengisa kanye nezindawo zokukhiqiza zesimanje, manje sesithole igama elihle phakathi kwabathengi bethu emhlabeni wonke ngenxaUbuso Bophawu Lwe-China Tungsten Carbide, Izindandatho Zokuvala, Ngomoya wokwenza izinto "ngokusebenza kahle kakhulu, ukulula, ukusebenza kahle kanye nokusungula izinto ezintsha", futhi ngokuhambisana nesiqondiso esinjalo sokukhonza "sekhwalithi enhle kodwa intengo engcono," kanye "nesikweletu somhlaba wonke", silwela ukubambisana nezinkampani zezingxenye zezimoto emhlabeni wonke ukuze senze ubambiswano oluzuzisa bonke.

Isembozo se-CVD-SiC sinezici zesakhiwo esifanayo, izinto ezihlangene, ukumelana nokushisa okuphezulu, ukumelana nokushiswa kwe-oxidation, ubumsulwa obuphezulu, ukumelana ne-asidi ne-alkali kanye ne-reagent yemvelo, enezakhiwo zomzimba nezimakhemikhali ezizinzile.

Uma kuqhathaniswa nezinto ze-graphite ezihlanzekile kakhulu, i-graphite iqala uku-oxidation ku-400C, okuzobangela ukulahlekelwa yimpuphu ngenxa yoku-oxidation, okuzoholela ekungcolisweni kwemvelo kumadivayisi angaphandle kanye namakamelo okuhlanza, futhi kwandise ukungcola kwendawo ehlanzekile kakhulu.

Kodwa-ke, ukugqoka kwe-SiC kungagcina ukuzinza ngokomzimba nangokwekhemikhali kuma-degrees angu-1600, Kusetshenziswa kabanzi embonini yanamuhla, ikakhulukazi embonini ye-semiconductor.

Inkampani yethu inikeza izinsizakalo zenqubo yokumboza i-SiC ngendlela ye-CVD ebusweni be-graphite, izinto zobumba nezinye izinto, ukuze amagesi akhethekile aqukethe ikhabhoni ne-silicon asabela ekushiseni okuphezulu ukuze athole ama-molecule e-SiC ahlanzekile kakhulu, ama-molecule abekwe ebusweni bezinto ezimboziwe, akha ungqimba oluvikelayo lwe-SIC. I-SIC eyakhiwe iboshwe ngokuqinile esisekelweni se-graphite, inikeza isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite bube buncane, bungabi ne-Porosity, bumelana nokushisa okuphezulu, bumelana nokugqwala kanye nokumelana ne-oxidation.

Izici eziyinhloko:

1. Ukumelana nokushisa okuphezulu kwe-oxidation:

ukumelana nokushiswa kwe-oxidation kusese kuhle kakhulu lapho izinga lokushisa liphezulu lifinyelela ku-1600 C.

2. Ubumsulwa obuphezulu: okwenziwe ngokufaka umusi wamakhemikhali ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, ubuso obuncane, izinhlayiya ezincane.

4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-reagent e-organic.

Imininingwane Eyinhloko Yezimbozo ze-CVD-SIC:

Amandla Okunikezela:

Izingcezu/Izingcezu eziyi-10000 ngenyanga
Ukupakisha Nokulethwa:
Ukupakisha: Ukupakisha Okujwayelekile Nokuqinile
Isikhwama se-poly + Ibhokisi + Ibhokisi + Iphalethi
Imbobo:
Ningbo/Shenzhen/Shanghai
Isikhathi esiholayo:

Q1: Angakanani amanani akho?
Amanani ethu angashintsha ngokuya ngokuhlinzekwa kanye nezinye izici zemakethe. Sizokuthumelela uhlu lwamanani olubuyekeziwe ngemuva kokuthi inkampani yakho isithinte ukuze uthole ulwazi olwengeziwe.
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U-Q3: Ungakwazi yini ukunikeza amadokhumenti afanele?
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Q7: Ingabe uyaqinisekisa ukulethwa kwemikhiqizo okuphephile nokuphephile?
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Izindleko zokuthumela zincike endleleni okhetha ukuthola ngayo izimpahla. I-Express ngokuvamile iyindlela eshesha kakhulu kodwa futhi ebiza kakhulu. Ukuthwala impahla ngolwandle kuyisisombululo esihle kakhulu senani elikhulu. Amanani empahla esingakunika wona kuphela uma sazi imininingwane yenani, isisindo kanye nendlela. Sicela usithinte ukuze uthole ulwazi olwengeziwe.