I kēia manawa,silicon carbide (SiC)he mea keramika hoʻokele wela ia e aʻo ikaika ʻia ana ma ka home a ma waho. He kiʻekiʻe loa ke koʻikoʻi koʻikoʻi o SiC, a hiki i kekahi mau ʻano kristal ke hiki i 270W/mK, ʻo ia kekahi alakaʻi i waena o nā mea hana ʻole. No ka laʻana, hiki ke ʻike ʻia ka hoʻohana ʻana o ka koʻikoʻi koʻikoʻi SiC i nā mea substrate o nā mea semiconductor, nā mea keramika hoʻokele wela kiʻekiʻe, nā mea hoʻomehana a me nā papa hoʻomehana no ka hana semiconductor, nā mea capsule no ka wahie nukelea, a me nā apo sila kinoea no nā pamu compressor.
Hoʻohana ʻia okalaka siliconma ke kahua semiconductor
He mea nui nā lako hana no ka hana ʻana i nā wafer silicon i ka ʻoihana semiconductor nā diski wili a me nā mea paʻa. Inā hana ʻia ka diski wili i ka hao i hoʻolei ʻia a i ʻole ke kila kalapona, he pōkole kona ola lawelawe a he nui kona coefficient hoʻonui wela. I ka wā o ka hana ʻana i nā wafer silicon, ʻoi aku hoʻi i ka wā o ka wili wikiwiki a i ʻole ka polishing, ma muli o ke komo ʻana a me ka deformation wela o ka diski wili, he paʻakikī ke hōʻoia i ka palahalaha a me ka parallelism o ka wafer silicon. Hana ʻia ka diski wili i hana ʻia menā keramika silicon carbidehe haʻahaʻa ka ʻaʻahu ma muli o kona paʻakikī kiʻekiʻe, a ʻo kona coefficient hoʻonui wela e like me ia o nā wafers silicon, no laila hiki ke wili ʻia a hoʻopili ʻia i ka wikiwiki kiʻekiʻe.
Eia kekahi, i ka wā e hana ʻia ai nā wafers silicon, pono lākou e hana i ka mālama wela kiʻekiʻe a lawe pinepine ʻia me ka hoʻohana ʻana i nā mea hana silicon carbide. He kūpaʻa lākou i ka wela a ʻaʻole luku. Hiki ke hoʻopili ʻia ke kalapona e like me ke daimana (DLC) a me nā uhi ʻē aʻe ma luna o ka ʻili e hoʻomaikaʻi i ka hana, hōʻoluʻolu i ka hōʻino ʻana o ka wafer, a pale i ka laha ʻana o ka haumia.
Eia kekahi, ma ke ʻano he ʻelele o nā mea semiconductor bandgap ākea o ke kolu o ka hanauna, loaʻa i nā mea kristal hoʻokahi silicon carbide nā waiwai e like me ka laulā bandgap nui (ma kahi o 3 mau manawa o Si), ke alakaʻi wela kiʻekiʻe (ma kahi o 3.3 mau manawa o Si a i ʻole 10 mau manawa o GaAs), ka nui o ka neʻe ʻana o ka saturation electron (ma kahi o 2.5 mau manawa o Si) a me ke kahua uila breakdown kiʻekiʻe (ma kahi o 10 mau manawa o Si a i ʻole 5 mau manawa o GaAs). Hoʻopiha nā mea SiC i nā hemahema o nā mea hana semiconductor kuʻuna i nā noi kūpono a ke lilo mālie nei i mea nui o nā semiconductors mana.
Ua piʻi nui ke koi no nā keramika silicon carbide thermal conductivity kiʻekiʻe
Me ka hoʻomohala mau ʻana o ka ʻepekema a me ka ʻenehana, ua piʻi nui ka noi no ka hoʻohana ʻana i nā keramika silicon carbide ma ke kahua semiconductor, a ʻo ke koʻikoʻi o ka conductivity thermal kiʻekiʻe kahi hōʻailona koʻikoʻi no kāna hoʻohana ʻana i nā ʻāpana lako hana semiconductor. No laila, he mea nui e hoʻoikaika i ka noiʻi ʻana i nā keramika silicon carbide thermal conductivity kiʻekiʻe. ʻO ka hoʻemi ʻana i ka nui o ka oxygen lattice, ka hoʻomaikaʻi ʻana i ka density, a me ka hoʻoponopono pono ʻana i ka hoʻolaha ʻana o ka lua o ka pae ma ka lattice nā ʻano hana nui e hoʻomaikaʻi ai i ka conductivity thermal o nā keramika silicon carbide.
I kēia manawa, he kakaikahi nā haʻawina e pili ana i nā keramika silicon carbide conductivity thermal kiʻekiʻe ma koʻu ʻāina, a aia nō kahi hakahaka nui i hoʻohālikelike ʻia me ka pae honua. ʻO nā kuhikuhi noiʻi e hiki mai ana:
●E hoʻoikaika i ke kaʻina hana hoʻomākaukau o ka pauka keramika silicon carbide. ʻO ka hoʻomākaukau ʻana o ka pauka silicon carbide maʻemaʻe kiʻekiʻe, haʻahaʻa-oxygen ke kumu no ka hoʻomākaukau ʻana o nā keramika silicon carbide conductivity wela kiʻekiʻe;
● Hoʻoikaika i ke koho ʻana o nā mea kōkua sintering a me nā noiʻi kumumanaʻo pili;
●Hoʻoikaika i ka noiʻi a me ka hoʻomohala ʻana i nā lako hana sintering kiʻekiʻe. Ma ka hoʻoponopono ʻana i ke kaʻina hana sintering e loaʻa ai kahi microstructure kūpono, he kūlana pono ia e loaʻa ai nā keramika silicon carbide thermal conductivity kiʻekiʻe.
Nā hana e hoʻomaikaʻi ai i ka conductivity thermal o nā keramika silicon carbide
ʻO ke kī i ka hoʻomaikaʻi ʻana i ka conductivity thermal o nā keramika SiC, ʻo ia ka hoʻemi ʻana i ke alapine hoʻopuehu phonon a hoʻonui i ke ala manuahi phonon. E hoʻomaikaʻi maikaʻi ʻia ka conductivity thermal o SiC ma ka hoʻemi ʻana i ka porosity a me ka palena o ka palaoa o nā keramika SiC, ka hoʻomaikaʻi ʻana i ka maʻemaʻe o nā palena palaoa SiC, ka hoʻemi ʻana i nā haumia lattice SiC a i ʻole nā hemahema lattice, a me ka hoʻonui ʻana i ka mea lawe kahe wela ma SiC. I kēia manawa, ʻo ka hoʻonui ʻana i ke ʻano a me ka ʻike o nā mea kōkua sintering a me ka mālama wela kiʻekiʻe nā hana nui e hoʻomaikaʻi ai i ka conductivity thermal o nā keramika SiC.
① Ke hoʻonui nei i ke ʻano a me ka ʻike o nā mea kōkua sintering
Hoʻohui pinepine ʻia nā ʻano kōkua sintering like ʻole i ka wā e hoʻomākaukau ai i nā keramika SiC conductivity wela kiʻekiʻe. Ma waena o lākou, ʻo ke ʻano a me ka nui o nā mea kōkua sintering he mana nui i ka conductivity wela o nā keramika SiC. No ka laʻana, hiki ke hoʻoheheʻe maʻalahi ʻia nā mea Al a i ʻole O i loko o ka ʻōnaehana Al2O3 sintering aids i loko o ka SiC lattice, e hopena ana i nā hakahaka a me nā hemahema, kahi e alakaʻi ai i ka hoʻonui ʻana i ke alapine hoʻopuehu phonon. Eia kekahi, inā haʻahaʻa ka nui o nā mea kōkua sintering, paʻakikī ka sinter a me ka densify o ka mea, ʻoiai ʻo ka nui o nā mea kōkua sintering e alakaʻi ai i ka hoʻonui ʻana i nā haumia a me nā hemahema. Hiki i nā mea kōkua sintering pae wai nui ke kāohi i ka ulu ʻana o nā hua SiC a hoʻemi i ke ala manuahi awelika o nā phonons. No laila, i mea e hoʻomākaukau ai i nā keramika SiC conductivity wela kiʻekiʻe, pono e hoʻemi i ka nui o nā mea kōkua sintering i ka hiki ke hoʻokō i nā koi o ka density sintering, a hoʻāʻo e koho i nā mea kōkua sintering paʻakikī ke hoʻoheheʻe i loko o ka SiC lattice.
*Nā waiwai wela o nā keramika SiC ke hoʻohui ʻia nā mea kōkua sintering like ʻole
I kēia manawa, ʻo nā keramika SiC i kaomi wela ʻia me BeO ma ke ʻano he mea kōkua sintering ka mea e loaʻa ai ka conductivity wela kiʻekiʻe loa o ka lumi-mahana (270W·m-1·K-1). Eia nō naʻe, he mea ʻawahia loa ʻo BeO a he carcinogenic, a ʻaʻole kūpono no ka hoʻohana ākea ʻana i nā keʻena hoʻokolohua a i ʻole nā kahua ʻoihana. ʻO ke kiko eutectic haʻahaʻa loa o ka ʻōnaehana Y2O3-Al2O3 he 1760 ℃, he mea kōkua sintering pae wai maʻamau no nā keramika SiC. Eia nō naʻe, ʻoiai ua maʻalahi ka hoʻoheheʻe ʻia ʻana o Al3+ i loko o ka lattice SiC, i ka wā e hoʻohana ʻia ai kēia ʻōnaehana ma ke ʻano he mea kōkua sintering, ʻoi aku ka liʻiliʻi o ka conductivity wela o ka lumi-mahana o nā keramika SiC ma mua o 200W·m-1·K-1.
ʻAʻole hiki ke hoʻoheheʻe maʻalahi ʻia nā mea honua laha ʻole e like me Y, Sm, Sc, Gd a me La i loko o ka lattice SiC a he kiʻekiʻe ko lākou pilina oxygen, hiki ke hoʻemi pono i ka nui o ka oxygen o ka lattice SiC. No laila, ʻo ka ʻōnaehana Y2O3-RE2O3 (RE=Sm, Sc, Gd, La) kahi mea kōkua sintering maʻamau no ka hoʻomākaukau ʻana i nā keramika SiC conductivity wela kiʻekiʻe (>200W·m-1·K-1). Ke lawe nei i ka ʻōnaehana kōkua sintering Y2O3-Sc2O3 ma ke ʻano he laʻana, nui ka waiwai ion deviation o Y3+ a me Si4+, a ʻaʻole i loaʻa i nā mea ʻelua ka hopena paʻa. He liʻiliʻi ka solubility o Sc i loko o ka SiC maʻemaʻe ma 1800~2600℃, ma kahi o (2~3)×1017atoms·cm-3.
② Ka mālama wela kiʻekiʻe
ʻO ka mālama wela kiʻekiʻe o nā keramika SiC he mea kūpono ia no ka hoʻopau ʻana i nā hemahema lattice, nā dislocations a me nā koena stress, e paipai ana i ka hoʻololi ʻana o kekahi mau mea amorphous i nā kristal, a hoʻonāwaliwali i ka hopena hoʻopuehu phonon. Eia kekahi, hiki i ka mālama wela kiʻekiʻe ke hoʻoulu pono i ka ulu ʻana o nā hua SiC, a hoʻomaikaʻi hope loa i nā waiwai wela o ka mea. No ka laʻana, ma hope o ka mālama wela kiʻekiʻe ma 1950°C, ua piʻi ka coefficient diffusion thermal o nā keramika SiC mai 83.03mm2·s-1 a i 89.50mm2·s-1, a ua piʻi ka conductivity thermal o ka lumi mai 180.94W·m-1·K-1 a i 192.17W·m-1·K-1. Hoʻomaikaʻi maikaʻi ka mālama wela kiʻekiʻe i ka hiki ke deoxidation o ke kōkua sintering ma ka ʻili SiC a me ka lattice, a hoʻopaʻa i ka pilina ma waena o nā hua SiC. Ma hope o ka mālama wela kiʻekiʻe, ua hoʻomaikaʻi nui ʻia ka conductivity thermal o ka lumi o nā keramika SiC.
Ka manawa hoʻouna: ʻOkakopa-24-2024