A halin yanzu,silicon carbide (SiC)wani abu ne na yumbu mai sarrafa zafi wanda ake nazari sosai a gida da waje. Tsarin watsa zafi na ka'idar SiC yana da girma sosai, kuma wasu nau'ikan lu'ulu'u na iya kaiwa 270W/mK, wanda ya riga ya zama jagora a cikin kayan da ba sa isar da zafi. Misali, ana iya ganin aikace-aikacen watsa zafi na SiC a cikin kayan substrate na na'urorin semiconductor, kayan yumbu mai ɗaukar zafi mai yawa, masu hita da faranti na dumama don sarrafa semiconductor, kayan capsules don man fetur na nukiliya, da zoben rufe gas don famfunan compressor.
Amfani dasilicon carbidea cikin filin semiconductor
Faifan niƙa da kayan aiki suna da matuƙar muhimmanci wajen samar da wafer ɗin silicon a masana'antar semiconductor. Idan faifan niƙa an yi shi ne da ƙarfe ko ƙarfe na carbon, tsawon rayuwarsa yana da gajarta kuma yawan faɗaɗa zafinsa yana da girma. A lokacin sarrafa wafer ɗin silicon, musamman a lokacin niƙa ko gogewa mai sauri, saboda lalacewa da nakasar zafi na faifan niƙa, lanƙwasa da daidaiton wafer ɗin silicon suna da wuya a tabbatar. Faifan niƙa da aka yi dayumburan silicon carbideyana da ƙarancin lalacewa saboda tsananin taurinsa, kuma ma'aunin faɗaɗa zafinsa iri ɗaya ne da na wafers na silicon, don haka ana iya niƙa shi a goge shi da sauri sosai.
Bugu da ƙari, idan aka samar da wafers na silicon, ana buƙatar a yi musu maganin zafi mai zafi sosai kuma galibi ana jigilar su ta amfani da kayan haɗin silicon carbide. Suna da juriya ga zafi kuma ba sa lalata su. Ana iya shafa carbon mai kama da lu'u-lu'u (DLC) da sauran rufin da ke saman don inganta aiki, rage lalacewar wafer, da kuma hana gurɓatawa daga yaɗuwa.
Bugu da ƙari, a matsayin wakilin kayan semiconductor na ƙarni na uku, kayan lu'ulu'u guda ɗaya na silicon carbide suna da halaye kamar faɗin bandgap mai girma (kimanin sau 3 na Si), yawan zafin jiki mai yawa (kimanin sau 3.3 na Si ko sau 10 na GaAs), yawan ƙaura mai yawa na electrons (kimanin sau 2.5 na Si) da kuma babban filin lantarki mai lalacewa (kimanin sau 10 na Si ko sau 5 na GaAs). Na'urorin SiC suna cika lahani na na'urorin kayan semiconductor na gargajiya a aikace-aikace kuma a hankali suna zama babban abin da ake amfani da shi a cikin semiconductors masu ƙarfi.
Bukatar yumbun silicon carbide mai yawan zafin jiki ya karu sosai
Tare da ci gaba da ci gaban kimiyya da fasaha, buƙatar amfani da yumburan silicon carbide a fannin semiconductor ya ƙaru sosai, kuma yawan kwararar zafi shine babban alamar amfani da shi a cikin kayan aikin kera semiconductor. Saboda haka, yana da mahimmanci a ƙarfafa bincike kan yawan kwararar zafi na silicon carbide. Rage yawan iskar oxygen da ke cikin raga, inganta yawansa, da kuma daidaita rarrabawar mataki na biyu a cikin raga sune manyan hanyoyin inganta kwararar zafi na yumburan silicon carbide.
A halin yanzu, akwai ƙarancin bincike kan yumburan silicon carbide masu ƙarfin zafi a ƙasata, kuma har yanzu akwai babban gibi idan aka kwatanta da matakin duniya. Umarnin bincike na gaba sun haɗa da:
●Ƙarfafa binciken tsarin shiri na foda na silicon carbide. Shirya foda na silicon carbide mai tsabta, mai ƙarancin iskar oxygen shine tushen shirya yumbu na silicon carbide mai yawan zafi;
● Ƙarfafa zaɓin kayan aikin tace sintetik da kuma binciken ka'idoji masu alaƙa;
●Ƙarfafa bincike da haɓaka kayan aikin tace siminti masu inganci. Ta hanyar daidaita tsarin tace siminti don samun ƙaramin tsari mai ma'ana, yana da mahimmanci a sami yumburan silicon carbide mai ƙarfin zafi mai yawa.
Matakai don inganta yanayin zafi na yumburan silicon carbide
Mabuɗin inganta yanayin zafi na tukwanen SiC shine rage yawan watsawar phonon da kuma ƙara hanyar 'yanci ta phonon. Za a inganta yanayin zafi na SiC ta hanyar rage porosity da iyakokin hatsi na tukwanen SiC, inganta tsarkin iyakokin hatsi na SiC, rage ƙazanta ko lahani na layin SiC, da kuma ƙara mai ɗaukar kwararar zafi a cikin SiC. A halin yanzu, inganta nau'in da abun ciki na kayan taimakon sintering da maganin zafi mai zafi sune manyan matakan inganta yanayin zafi na tukwanen SiC.
① Inganta nau'in da abun ciki na kayan aikin sintering
Sau da yawa ana ƙara kayan taimakon sintering daban-daban lokacin shirya kayan aikin sintering masu ƙarfi na SiC. Daga cikinsu, nau'in da abun ciki na kayan taimakon sintering suna da babban tasiri akan ƙarfin zafin sintering na kayan aikin siC. Misali, abubuwan Al ko O a cikin kayan taimakon sintering na tsarin Al2O3 suna narkewa cikin sauƙi cikin layin SiC, wanda ke haifar da gurɓatawa da lahani, wanda ke haifar da ƙaruwa a cikin mitar watsawa na phonon. Bugu da ƙari, idan abun ciki na kayan taimakon sintering ya yi ƙasa, kayan yana da wahalar yin sintering da yawa, yayin da babban abun ciki na kayan taimakon sintering zai haifar da ƙaruwar ƙazanta da lahani. Abubuwan taimakon sintering na lokaci mai yawa na ruwa na iya hana haɓakar hatsin SiC da rage matsakaicin hanyar phonon kyauta. Saboda haka, don shirya kayan aikin siC masu ƙarfi na zafi, ya zama dole a rage abun ciki na kayan taimakon sintering gwargwadon iko yayin biyan buƙatun yawan sintering, kuma a yi ƙoƙarin zaɓar kayan taimakon sintering waɗanda ke da wahalar narkewa a cikin layin SiC.
*Abubuwan zafi na tukwane na SiC idan aka ƙara kayan aikin tacewa daban-daban
A halin yanzu, tukwanen SiC masu zafi da aka haɗa da BeO a matsayin taimakon sintering suna da matsakaicin ƙarfin zafin ɗaki (270W·m-1·K-1). Duk da haka, BeO abu ne mai guba sosai kuma yana haifar da cutar kansa, kuma bai dace da amfani da shi ba a cikin dakunan gwaje-gwaje ko filayen masana'antu. Mafi ƙarancin wurin eutectic na tsarin Y2O3-Al2O3 shine 1760℃, wanda shine taimakon sintering na ruwa-lokaci don tukwanen SiC. Duk da haka, tunda Al3+ yana narkewa cikin sauƙi cikin layin SiC, lokacin da ake amfani da wannan tsarin azaman taimakon sintering, ƙarfin sintering na zafi na ɗakin tukwanen SiC bai kai 200W·m-1·K-1 ba.
Abubuwan ƙasa marasa ƙarfi kamar Y, Sm, Sc, Gd da La ba sa narkewa cikin sauƙi a cikin layin SiC kuma suna da babban haɗin oxygen, wanda zai iya rage yawan iskar oxygen na layin SiC yadda ya kamata. Saboda haka, tsarin Y2O3-RE2O3 (RE=Sm, Sc, Gd, La) taimako ne na gama gari don shirya tukwane na SiC mai yawan zafi (>200W·m-1·K-1). Idan aka ɗauki taimakon simintin tsarin Y2O3-Sc2O3 a matsayin misali, ƙimar karkacewar ion na Y3+ da Si4+ babba ne, kuma biyun ba sa shan maganin tauri. Narkewar Sc a cikin tsantsar SiC a 1800~2600℃ ƙarami ne, kusan (2~3)×1017atoms·cm-3.
② Maganin zafi mai zafi
Maganin zafi mai zafi na tukwane na SiC yana taimakawa wajen kawar da lahani na lattice, wargajewa da sauran damuwa, yana haɓaka canjin tsarin wasu kayan da ba su da tsari zuwa lu'ulu'u, da kuma raunana tasirin watsawa na phonon. Bugu da ƙari, maganin zafi mai zafi na iya haɓaka haɓakar hatsin SiC yadda ya kamata, kuma a ƙarshe inganta halayen zafi na kayan. Misali, bayan maganin zafi mai zafi a 1950°C, yawan watsawar zafi na tukwane na SiC ya ƙaru daga 83.03mm2·s-1 zuwa 89.50mm2·s-1, kuma watsawar zafi na ɗakin ya ƙaru daga 180.94W·m-1·K-1 zuwa 192.17W·m-1·K-1. Maganin zafi mai zafi yana inganta ikon cire iskar oxygen na taimakon sintering akan saman SiC da lattice, kuma yana sa haɗin tsakanin ƙwayoyin SiC ya yi ƙarfi. Bayan maganin zafi mai zafi, an inganta watsawar zafi na ɗakin da zazzaɓi na tukwane na SiC sosai.
Lokacin Saƙo: Oktoba-24-2024