Ubu,karubide ya silikoni (SiC)ni ibikoresho bya ceramic bitwara ubushyuhe byigwa cyane mu gihugu no mu mahanga. Uburyo SiC itwara ubushyuhe buri hejuru cyane, kandi imiterere imwe na imwe ya kristu ishobora kugera kuri 270W/mK, ikaba isanzwe ari iya mbere mu bikoresho bidatwara ubushyuhe. Urugero, ikoreshwa rya SiC rishobora kugaragara mu bikoresho bya semiconductor, ibikoresho bya ceramic bitwara ubushyuhe bwinshi, ibyuma bishyushya n'ibicanwa bishyushya mu gutunganya semiconductor, ibikoresho bya kapsule bya lisansi ya nyukiliya, n'impeta zo gufunga gaze ku mapompo ya compressor.
Ishyirwa mu bikorwa ryakarubide ya silikonimu rwego rwa semiconductor
Disiki n'ibikoresho byo gusya ni ibikoresho by'ingenzi mu gukora wafer ya silikoni mu nganda za semiconductor. Iyo disiki yo gusya ikozwe mu cyuma cyabumbwe cyangwa icyuma cya karuboni, igihe cyayo cyo kuyikoresha ni gito kandi ingano yayo yo kwaguka mu bushyuhe ni nini. Mu gihe cyo gutunganya wafer ya silikoni, cyane cyane mu gihe cyo gusya cyangwa gusya vuba, bitewe no kwangirika no guhinduka k'ubushyuhe kwa disiki yo gusya, imiterere yayo n'uburyo ingana biragoye kwemeza. Disiki yo gusya ikozwe muriibumba rya karubide rya silikoniIfite ubusaza buke bitewe n'ubukomere bwayo bwinshi, kandi ubushobozi bwayo bwo kwaguka mu bushyuhe bungana n'ubw'udupira twa silikoni, bityo ishobora gusya no gusya ku muvuduko mwinshi.
Byongeye kandi, iyo uduce twa silikoni twakozwe, tugomba gukorerwa ubushyuhe bwinshi kandi akenshi tujyanwa hakoreshejwe ibikoresho bya silikoni. Ntiturinda ubushyuhe kandi ntitwangiza. Karuboni isa na diyama (DLC) n'ibindi bikoresho bishobora gushyirwa ku buso kugira ngo byongere imikorere, bigabanye kwangirika kwa wafer, kandi birinde kwandura gukwirakwira.
Byongeye kandi, nk'ibiranga ibikoresho bya semiconductor bya gisekuru cya gatatu bya wide-bandgap, ibikoresho bya silicon carbide single crystal bifite imiterere nk'ubugari bwa bandgap bunini (nkuko inshuro 3 za Si), ubwikorezi bwinshi bw'ubushyuhe (nkuko inshuro 3.3 za Si cyangwa kukuko inshuro 10 za GaAs), umuvuduko mwinshi wo kwimuka kwa electron (nkuko inshuro 2.5 za Si) n'amashanyarazi menshi (nkuko inshuro 10 za Si cyangwa kukuko inshuro 5 za GaAs). Ibikoresho bya SiC bikemura ibibazo by'ibikoresho gakondo bya semiconductor mu mikoreshereze ifatika kandi buhoro buhoro bigenda bihinduka ingenzi mu bikoresho by'amashanyarazi.
Ubukene bw'ibikoresho bya silikoni bya karubide bya silicon bifite ubushyuhe bwinshi bwariyongereye cyane
Bitewe n’iterambere rikomeje rya siyansi n’ikoranabuhanga, icyifuzo cyo gukoresha silicon carbide ceramics mu ishami rya semiconductor cyariyongereye cyane, kandi ubwiyongere bw’ubushyuhe ni ikimenyetso cy’ingenzi cy’ikoreshwa ryayo mu bikoresho bya semiconductor. Kubwibyo, ni ngombwa gushimangira ubushakashatsi ku bushobozi bwo gukoresha silicon carbide ceramics mu ikoranabuhanga. Kugabanya ingano ya ogisijeni mu ikoranabuhanga, kunoza ubucucike, no kugenzura neza ikwirakwizwa ry’icyiciro cya kabiri mu ikoranabuhanga ni bwo buryo bw’ingenzi bwo kunoza ubwiyongere bw’ubushyuhe bwa silicon carbide ceramics.
Kugeza ubu, hari ubushakashatsi buke ku bikoresho bya silikoni bya karubide bikoresha ubushyuhe bwinshi mu gihugu cyanjye, kandi haracyari icyuho kinini ugereranyije n'urwego rw'isi. Ibyerekezo by'ubushakashatsi bw'ejo hazaza birimo:
●Komeza ubushakashatsi ku ifu ya silicon carbide ceramic. Gutegura ifu ya silicon carbide ifite umwuka mwiza kandi idafite ogisijeni nyinshi ni ishingiro ryo gutegura ifu ya silicon carbide ceramics ifite ubushyuhe bwinshi;
● Kongera imbaraga mu guhitamo ibikoresho byo gusya n'ubushakashatsi bujyanye nabyo;
● Komeza ubushakashatsi n'iterambere ry'ibikoresho byo gutwika ibikoresho byo mu rwego rwo hejuru. Mu kugenzura inzira yo gutwika ibikoresho kugira ngo ubone imiterere ikwiye, ni ngombwa kugira ngo ubone ceramics za silicon carbide zikoresha ubushyuhe bwinshi.
Ingamba zo kunoza uburyo ubushyuhe bukoreshwa mu gukwirakwiza ibyuma bya silikoni bya karubide
Icy'ingenzi mu kunoza uburyo ubushyuhe butwara SiC ceramics bukoreshwa ni ukugabanya inshuro phonon ikwirakwira no kongera inzira y’ubushyuhe ikoreshwa phonon. Uburyo ubushyuhe butwara SiC buzarushaho kunozwa neza binyuze mu kugabanya porosity n’ubucucike bw’ibinyampeke bya SiC ceramics, kunoza ubuziranenge bw’ibinyampeke bya SiC, kugabanya imyanda cyangwa inenge ya lattice ya SiC, no kongera uburyo bwo kohereza ubushyuhe muri SiC. Kuri ubu, kunoza ubwoko n’ibikubiye mu bikoresho bifasha gutwika no kuvura ubushyuhe bwinshi ni byo bipimo by’ingenzi byo kunoza uburyo ubushyuhe butwara SiC ceramics.
① Gutunganya ubwoko n'ibikubiye mu bikoresho byo gukaraba
Ibikoresho bitandukanye byo gusya bikunze kongerwamo iyo hategurwa ibikoresho bya SiC ceramics bikoresha ubushyuhe bwinshi. Muri byo, ubwoko n'ingano y'ibikoresho byo gusya bigira ingaruka zikomeye ku bushyuhe bwa SiC ceramics. Urugero, ibintu bya Al cyangwa O biri muri Al2O3 system ibyuma byo gusya byoroshye gushonga mu gice cya SiC, bigatuma habaho icyuho n'ubusembwa, bigatuma habaho kwiyongera k'umuvuduko w'amajwi. Byongeye kandi, niba ingano y'ibikoresho byo gusya ari nke, ibikoresho biragoye gusya no kwiyongera, mu gihe ingano y'ibikoresho byo gusya izatuma habaho kwiyongera kw'umwanda n'ubusembwa. Ibikoresho byo gusya cyane bishobora kandi kubuza gukura kw'ibinyampeke bya SiC no kugabanya inzira y'ubushyuhe ya phononi. Kubwibyo, kugira ngo hategurwe ibikoresho bya SiC ceramics bikoresha ubushyuhe bwinshi, ni ngombwa kugabanya ingano y'ibikoresho byo gusya uko bishoboka kose mu gihe cyujuje ibisabwa byo gusya, no kugerageza guhitamo ibikoresho byo gusya bigoye gushonga mu gice cya SiC.
*Imiterere y'ubushyuhe bw'ibikoresho bya SiC ceramics iyo hongewemo ibikoresho bitandukanye byo gushyushya
Muri iki gihe, ibumba rya SiC rishyushye rikoreshwa na BeO nk'igikoresho cyo gutwika rifite ubushobozi bwo gutwara ubushyuhe bwinshi mu cyumba (270W·m-1·K-1). Ariko, BeO ni ikintu gifite uburozi bwinshi kandi gitera kanseri, kandi ntikibereye gukoreshwa cyane muri laboratwari cyangwa mu nganda. Aho hasi cyane h'uburyo bwa Y2O3-Al2O3 ni 1760℃, ikaba ari igikoresho gisanzwe cyo gutwika mu gice cy'amazi ku ibumba rya SiC. Ariko, kubera ko Al3+ ishongeshwa byoroshye mu gice cya SiC, iyo ubu buryo bukoreshejwe nk'igikoresho cyo gutwika, ubushobozi bwo gutwara ubushyuhe mu cyumba bwa SiC ceramics buri munsi ya 200W·m-1·K-1.
Ibintu by’ubutaka bidasanzwe nka Y, Sm, Sc, Gd na La ntibishongesha byoroshye muri lattice ya SiC kandi bifite umwuka mwinshi wa ogisijeni, bishobora kugabanya neza ingano ya ogisijeni muri lattice ya SiC. Kubwibyo, sisitemu ya Y2O3-RE2O3 (RE=Sm, Sc, Gd, La) ni igikoresho gisanzwe cyo gusya mu gutegura amashanyarazi menshi ashyushye (>200W·m-1·K-1) SiC. Dufashe urugero rw'igikoresho cyo gusya cy'isi ya Y2O3-Sc2O3, agaciro ka iyoni ya Y3+ na Si4+ ni kanini, kandi byombi ntibinyura mu gisubizo gikomeye. Gushonga kwa Sc muri SiC nziza kuri 1800~2600℃ ni gato, hafi (2~3)×1017atoms·cm-3.
② Gukoresha ubushyuhe bwinshi
Gutunganya ubushyuhe bwinshi bwa SiC ceramics bigira uruhare mu gukuraho inenge za lattice, kwimuka no gusigara kw'imihangayiko, bigatera impinduka mu miterere y'ibikoresho bimwe na bimwe bihinduka kristu, kandi bigaca intege ingaruka zo gukwirakwira kwa phonon. Byongeye kandi, gutunganya ubushyuhe bwinshi bishobora guteza imbere gukura kw'ibinyampeke bya SiC, kandi amaherezo bikanoza imiterere y'ubushyuhe bw'ibikoresho. Urugero, nyuma yo gutunganya ubushyuhe bwinshi kuri 1950°C, igipimo cyo gukwirakwiza ubushyuhe bwa SiC ceramics cyariyongereye kuva kuri 83.03mm2·s-1 kugera kuri 89.50mm2·s-1, naho ubwikorezi bw'ubushyuhe bw'icyumba bwariyongereye kuva kuri 180.94W·m-1·K-1 kugera kuri 192.17W·m-1·K-1. Gutunganya ubushyuhe bwinshi binoza neza ubushobozi bwo gukuraho ogisijeni bw'ubufasha bwo gutwika ku buso bwa SiC na lattice, kandi bigatuma isano iri hagati y'ibinyampeke bya SiC irushaho gukomera. Nyuma yo gutunganya ubushyuhe bwinshi, ubwikorezi bw'ubushyuhe bw'icyumba bwa SiC ceramics bwarushijeho kunozwa cyane.
Igihe cyo kohereza: Ukwakira-24-2024